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STB30NM50N-VB Product details
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STB30NM50N-VB Product Introduction
**STB30NM50N-VB** is a high-efficiency single N-channel MOSFET using **SJ_Multi-EPI** technology, packaged in **TO263**. This MOSFET is designed for high voltage (500V) and high current (30A) applications, providing excellent performance, and is particularly suitable for power conversion, inverters and other high-power electronic systems. Its low on-resistance (RDS(ON)) of 140mΩ ensures low power loss during operation, thereby improving system efficiency and reducing heat. The high-voltage tolerance and low on-resistance of the STB30NM50N-VB make it an ideal choice for power control and management.
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**STB30NM50N-VB** is a high-efficiency single N-channel MOSFET using **SJ_Multi-EPI** technology, packaged in **TO263**. This MOSFET is designed for high voltage (500V) and high current (30A) applications, providing excellent performance, and is particularly suitable for power conversion, inverters and other high-power electronic systems. Its low on-resistance (RDS(ON)) of 140mΩ ensures low power loss during operation, thereby improving system efficiency and reducing heat. The high-voltage tolerance and low on-resistance of the STB30NM50N-VB make it an ideal choice for power control and management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 30A | 140mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
STB30NM50N-VB Parameter Description
| **Parameter** | **Value** | **Description** |
|----------------------|--------------------|---------------------------------------------------------------|
| **Package Type** | TO263 | TO263 package, suitable for high power applications requiring good heat dissipation performance. |
| **Configuration** | Single N-channel | Single N-channel configuration, suitable for high current control and switch regulation. |
| **Drain-Source Voltage (VDS)** | 500V | Maximum drain-source voltage is 500V, suitable for medium and high voltage applications, especially power transmission, DC-DC converters, etc. |
| **Gate-Source Voltage (VGS)** | ±30V | Maximum gate-source voltage is ±30V, with strong compatibility, suitable for various control signal voltages. |
| **Turn-on threshold voltage (Vth)** | 3.5V | The turn-on threshold voltage is 3.5V, which ensures that the MOSFET is stably turned on at a moderate voltage. |
| **On-resistance (RDS(ON))** | 140mΩ @ VGS=10V | Under 10V gate drive, it has a low on-resistance to ensure low loss and high efficiency performance. |
| **Maximum drain current (ID)** | 30A | The maximum drain current is 30A, which is suitable for controlling larger power currents. |
| **Technology type** | SJ_Multi-EPI | Using SJ_Multi-EPI technology, it has low on-resistance and good switching efficiency. |
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| **Parameter** | **Value** | **Description** |
|----------------------|--------------------|---------------------------------------------------------------|
| **Package Type** | TO263 | TO263 package, suitable for high power applications requiring good heat dissipation performance. |
| **Configuration** | Single N-channel | Single N-channel configuration, suitable for high current control and switch regulation. |
| **Drain-Source Voltage (VDS)** | 500V | Maximum drain-source voltage is 500V, suitable for medium and high voltage applications, especially power transmission, DC-DC converters, etc. |
| **Gate-Source Voltage (VGS)** | ±30V | Maximum gate-source voltage is ±30V, with strong compatibility, suitable for various control signal voltages. |
| **Turn-on threshold voltage (Vth)** | 3.5V | The turn-on threshold voltage is 3.5V, which ensures that the MOSFET is stably turned on at a moderate voltage. |
| **On-resistance (RDS(ON))** | 140mΩ @ VGS=10V | Under 10V gate drive, it has a low on-resistance to ensure low loss and high efficiency performance. |
| **Maximum drain current (ID)** | 30A | The maximum drain current is 30A, which is suitable for controlling larger power currents. |
| **Technology type** | SJ_Multi-EPI | Using SJ_Multi-EPI technology, it has low on-resistance and good switching efficiency. |
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Domain and module applications：
STB30NM50N-VB Application Fields and Modules
#### 1. **Power Management and DC-DC Converter**
**Application Scenario:** In power management systems, especially DC-DC converters, STB30NM50N-VB can be used as an efficient switching element to regulate current.
**Features and Advantages:** This MOSFET has a high voltage tolerance of 500V and a low on-resistance, which can reduce energy loss during voltage conversion and ensure efficient operation of the power system. Suitable for high-efficiency power supply designs such as industrial power supplies and power tool power supplies.
#### 2. **Inverter**
**Application Scenario:** In high-power systems such as solar inverters and power inverters, STB30NM50N-VB is used as a switching element to control the flow of power.
**Features and Advantages:** Its high voltage tolerance and low on-resistance are very suitable for inverter applications, which can ensure that the system works stably under high voltage, reduce power loss, and improve power conversion efficiency.
#### 3. **Electric Vehicle Battery Management System**
**Application Scenarios:** In the battery management system (BMS) of electric vehicles, the STB30NM50N-VB is used for efficient battery charge and discharge control.
**Features and Advantages:** Its 500V high voltage and 30A current carrying capacity are suitable for the requirements of precise current control and regulation in electric vehicle battery systems, and can effectively improve the working efficiency and safety of battery management systems.
#### 4. **Battery Charger**
**Application Scenarios:** The STB30NM50N-VB can be used in battery chargers to control the flow of current and ensure a stable and efficient charging process.
**Features and Advantages:** The high withstand voltage characteristics and low on-resistance enable it to withstand large currents during battery charging, ensuring a fast and safe charging process, and is suitable for battery charging applications such as power tools and electric vehicles.
#### 5. **Industrial power control system**
**Application scenario:** In industrial power control systems, STB30NM50N-VB can achieve precise control of power flow.
**Features and advantages:** It performs well in high-voltage and high-current applications, and is suitable for industrial control systems such as motor drives and power converters, providing efficient power management and conversion.
#### 6. **Power conversion module**
**Application scenario:** In high-efficiency power conversion modules, STB30NM50N-VB is used to achieve current regulation and conversion and optimize power performance.
**Features and advantages:** The high voltage and low on-resistance characteristics provided by this MOSFET make it very suitable for power conversion modules such as UPS (uninterruptible power supply) and high-frequency power converters, which can ensure high efficiency in the conversion process of electric energy.
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**STB30NM50N-VB** is a single N-channel MOSFET designed for high voltage (500V) and high current (30A) applications. It uses **SJ_Multi-EPI** technology to provide low on-resistance and excellent switching performance. It is widely used in power management, inverters, electric vehicles, battery chargers and industrial power control, and can play an important role in efficient power conversion, current regulation and power management.
#### 1. **Power Management and DC-DC Converter**
**Application Scenario:** In power management systems, especially DC-DC converters, STB30NM50N-VB can be used as an efficient switching element to regulate current.
**Features and Advantages:** This MOSFET has a high voltage tolerance of 500V and a low on-resistance, which can reduce energy loss during voltage conversion and ensure efficient operation of the power system. Suitable for high-efficiency power supply designs such as industrial power supplies and power tool power supplies.
#### 2. **Inverter**
**Application Scenario:** In high-power systems such as solar inverters and power inverters, STB30NM50N-VB is used as a switching element to control the flow of power.
**Features and Advantages:** Its high voltage tolerance and low on-resistance are very suitable for inverter applications, which can ensure that the system works stably under high voltage, reduce power loss, and improve power conversion efficiency.
#### 3. **Electric Vehicle Battery Management System**
**Application Scenarios:** In the battery management system (BMS) of electric vehicles, the STB30NM50N-VB is used for efficient battery charge and discharge control.
**Features and Advantages:** Its 500V high voltage and 30A current carrying capacity are suitable for the requirements of precise current control and regulation in electric vehicle battery systems, and can effectively improve the working efficiency and safety of battery management systems.
#### 4. **Battery Charger**
**Application Scenarios:** The STB30NM50N-VB can be used in battery chargers to control the flow of current and ensure a stable and efficient charging process.
**Features and Advantages:** The high withstand voltage characteristics and low on-resistance enable it to withstand large currents during battery charging, ensuring a fast and safe charging process, and is suitable for battery charging applications such as power tools and electric vehicles.
#### 5. **Industrial power control system**
**Application scenario:** In industrial power control systems, STB30NM50N-VB can achieve precise control of power flow.
**Features and advantages:** It performs well in high-voltage and high-current applications, and is suitable for industrial control systems such as motor drives and power converters, providing efficient power management and conversion.
#### 6. **Power conversion module**
**Application scenario:** In high-efficiency power conversion modules, STB30NM50N-VB is used to achieve current regulation and conversion and optimize power performance.
**Features and advantages:** The high voltage and low on-resistance characteristics provided by this MOSFET make it very suitable for power conversion modules such as UPS (uninterruptible power supply) and high-frequency power converters, which can ensure high efficiency in the conversion process of electric energy.
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**STB30NM50N-VB** is a single N-channel MOSFET designed for high voltage (500V) and high current (30A) applications. It uses **SJ_Multi-EPI** technology to provide low on-resistance and excellent switching performance. It is widely used in power management, inverters, electric vehicles, battery chargers and industrial power control, and can play an important role in efficient power conversion, current regulation and power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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