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STB30NE06L-VB Product details
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Product Introduction
**STB30NE06L-VB** is a high-performance single N-channel power MOSFET in TO-263 package and designed based on advanced **Trench** technology. It is suitable for low-voltage, high-efficiency switching power supplies and power management applications. It has a drain-source withstand voltage of 60V, suitable for various power control applications, and can provide excellent switching performance and efficiency. The gate threshold voltage of this MOSFET is 1.7V, and it has a low on-resistance (RDS(ON)), which is 35mΩ at VGS=4.5V and 32mΩ at VGS=10V, which can effectively reduce power loss and improve overall system efficiency. The maximum continuous drain current is 50A, which is suitable for use in power systems with high current loads. STB30NE06L-VB is suitable for power management, DC-DC converters and other industrial applications that require high efficiency, high reliability and low power loss.
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**STB30NE06L-VB** is a high-performance single N-channel power MOSFET in TO-263 package and designed based on advanced **Trench** technology. It is suitable for low-voltage, high-efficiency switching power supplies and power management applications. It has a drain-source withstand voltage of 60V, suitable for various power control applications, and can provide excellent switching performance and efficiency. The gate threshold voltage of this MOSFET is 1.7V, and it has a low on-resistance (RDS(ON)), which is 35mΩ at VGS=4.5V and 32mΩ at VGS=10V, which can effectively reduce power loss and improve overall system efficiency. The maximum continuous drain current is 50A, which is suitable for use in power systems with high current loads. STB30NE06L-VB is suitable for power management, DC-DC converters and other industrial applications that require high efficiency, high reliability and low power loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| Parameter | Value | Description|
|----------------|-------------------|--------------------------------------|
| **Package type** | TO-263 (D2PAK) | High power density surface mount package with good heat dissipation performance|
| **Channel configuration** | Single N-channel | Simplifies circuit design, suitable for single current control|
| **Drain-source withstand voltage (VDS)** | 60V | Suitable for low voltage power switching and power conversion systems|
| **Gate-source withstand voltage (VGS)** | ±20V | Supports a wide range of operating gate voltages|
| **Gate threshold voltage (Vth)** | 1.7V | Low threshold voltage ensures efficient switching performance of the MOSFET|
| **On-resistance (RDS(ON))** | 35mΩ@VGS=4.5V | Low on-resistance at 4.5V gate voltage for high-efficiency applications|
| **On-resistance (RDS(ON))** | 32mΩ@VGS=10V | On-resistance is further reduced at 10V gate voltage, effectively reducing power loss|
| **Maximum drain current (ID)** | 50A | High current handling capability for medium and high power applications|
| **Technology type** | Trench | Provides low on-resistance and high switching speed for high-efficiency power systems|
| **Operating temperature range** | -55°C ~ 150°C | Wide operating temperature range for harsh application environments|
| **Switching speed** | High speed | Provides fast switching capability for high-frequency applications|
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| Parameter | Value | Description|
|----------------|-------------------|--------------------------------------|
| **Package type** | TO-263 (D2PAK) | High power density surface mount package with good heat dissipation performance|
| **Channel configuration** | Single N-channel | Simplifies circuit design, suitable for single current control|
| **Drain-source withstand voltage (VDS)** | 60V | Suitable for low voltage power switching and power conversion systems|
| **Gate-source withstand voltage (VGS)** | ±20V | Supports a wide range of operating gate voltages|
| **Gate threshold voltage (Vth)** | 1.7V | Low threshold voltage ensures efficient switching performance of the MOSFET|
| **On-resistance (RDS(ON))** | 35mΩ@VGS=4.5V | Low on-resistance at 4.5V gate voltage for high-efficiency applications|
| **On-resistance (RDS(ON))** | 32mΩ@VGS=10V | On-resistance is further reduced at 10V gate voltage, effectively reducing power loss|
| **Maximum drain current (ID)** | 50A | High current handling capability for medium and high power applications|
| **Technology type** | Trench | Provides low on-resistance and high switching speed for high-efficiency power systems|
| **Operating temperature range** | -55°C ~ 150°C | Wide operating temperature range for harsh application environments|
| **Switching speed** | High speed | Provides fast switching capability for high-frequency applications|
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Domain and module applications：
Applications and module examples
1. **Power management and power conversion**
- **DC-DC converter**: STB30NE06L-VB is very suitable for DC-DC converters, especially in applications with low voltage and high efficiency requirements. Due to its low on-resistance (RDS(ON)), it can reduce power loss and improve conversion efficiency, making it very suitable for battery-powered devices and power adapters.
- **Power module**: It can provide efficient power conversion, especially for power modules requiring high current and low power loss, such as power management of embedded systems and telecommunications equipment, ensuring system stability and low thermal load.
2. **Automotive electronics**
- **Electric vehicle battery management system (BMS)**: STB30NE06L-VB is suitable for battery management systems in electric vehicles. Its low on-resistance and high current capability can effectively improve battery charging and discharging efficiency. Especially in environments where fast response and high current control of battery management systems are required, this MOSFET can help reduce power loss and improve system efficiency.
- **Automotive power supply system**: This MOSFET is also suitable for automotive power modules, especially those power conversion systems that require high efficiency, for switching control of high-load power in electric vehicles.
3. **Consumer electronics and home appliances**
- **Smart home appliance power management**: The low on-resistance of STB30NE06L-VB makes it an ideal choice for smart home appliances, especially in power adapters that require high efficiency, it can effectively reduce power loss and extend the service life of the device. It is suitable for battery-powered systems in smart home appliances to ensure efficient energy management.
- **Chargers and adapters**: This MOSFET is also widely used in various power adapters and chargers, reducing energy loss and improving charging efficiency through its high switching performance, especially for high-power charging devices.
4. **Industrial control systems**
- **Motor drive and control**: The high current capability and low on-resistance of STB30NE06L-VB make it an ideal choice for industrial motor drive and servo control applications. It is able to withstand high current loads and excel in high-speed switching operations, suitable for motor control in various industrial automation systems.
- **Power Conditioners and Adjustable Power Supplies**: In industrial power conditioning and power conversion systems, the STB30NE06L-VB is an ideal choice, especially in industrial environments that require high efficiency and stability, enabling fast and efficient current switching.
5. **Communication Equipment and Network Power**
- **Data Center Power Modules**: In data centers, the STB30NE06L-VB can be used in efficient power modules to provide the required high current support while reducing system energy consumption through its low on-resistance. Its high-speed switching characteristics and high efficiency make it particularly suitable for power management in servers and network switches.
- **Network Switch Power Management**: This MOSFET is also suitable for various network equipment, ensuring efficient power conversion and low-power operation, thereby reducing equipment heat generation and improving stability.
1. **Power management and power conversion**
- **DC-DC converter**: STB30NE06L-VB is very suitable for DC-DC converters, especially in applications with low voltage and high efficiency requirements. Due to its low on-resistance (RDS(ON)), it can reduce power loss and improve conversion efficiency, making it very suitable for battery-powered devices and power adapters.
- **Power module**: It can provide efficient power conversion, especially for power modules requiring high current and low power loss, such as power management of embedded systems and telecommunications equipment, ensuring system stability and low thermal load.
2. **Automotive electronics**
- **Electric vehicle battery management system (BMS)**: STB30NE06L-VB is suitable for battery management systems in electric vehicles. Its low on-resistance and high current capability can effectively improve battery charging and discharging efficiency. Especially in environments where fast response and high current control of battery management systems are required, this MOSFET can help reduce power loss and improve system efficiency.
- **Automotive power supply system**: This MOSFET is also suitable for automotive power modules, especially those power conversion systems that require high efficiency, for switching control of high-load power in electric vehicles.
3. **Consumer electronics and home appliances**
- **Smart home appliance power management**: The low on-resistance of STB30NE06L-VB makes it an ideal choice for smart home appliances, especially in power adapters that require high efficiency, it can effectively reduce power loss and extend the service life of the device. It is suitable for battery-powered systems in smart home appliances to ensure efficient energy management.
- **Chargers and adapters**: This MOSFET is also widely used in various power adapters and chargers, reducing energy loss and improving charging efficiency through its high switching performance, especially for high-power charging devices.
4. **Industrial control systems**
- **Motor drive and control**: The high current capability and low on-resistance of STB30NE06L-VB make it an ideal choice for industrial motor drive and servo control applications. It is able to withstand high current loads and excel in high-speed switching operations, suitable for motor control in various industrial automation systems.
- **Power Conditioners and Adjustable Power Supplies**: In industrial power conditioning and power conversion systems, the STB30NE06L-VB is an ideal choice, especially in industrial environments that require high efficiency and stability, enabling fast and efficient current switching.
5. **Communication Equipment and Network Power**
- **Data Center Power Modules**: In data centers, the STB30NE06L-VB can be used in efficient power modules to provide the required high current support while reducing system energy consumption through its low on-resistance. Its high-speed switching characteristics and high efficiency make it particularly suitable for power management in servers and network switches.
- **Network Switch Power Management**: This MOSFET is also suitable for various network equipment, ensuring efficient power conversion and low-power operation, thereby reducing equipment heat generation and improving stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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