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STB270N04-VB Product details

Product introduction:

Product Introduction

**STB270N04-VB** is a high-performance single-channel N-type MOSFET in **TO263** package, designed for high current and high efficiency applications. Its maximum drain-source voltage (VDS) is 40V, the maximum gate-source voltage (VGS) is ±20V, it has excellent conduction performance, and the maximum drain current (ID) is 150A. Through **Trench** technology optimization design, this MOSFET achieves low on-resistance, and the on-resistance can be as low as 2mΩ when VGS=10V, ensuring extremely low power loss under high current conditions. The low on-resistance and high current carrying capacity of this component make it particularly outstanding in power conversion and high-efficiency systems.

**STB270N04-VB** is widely used in various high-efficiency power systems, industrial applications, electric vehicles and other fields, and is particularly suitable for occasions requiring high power and high current, such as motor drives, high-power converters, etc. Through low energy loss and high efficiency switching characteristics, this MOSFET helps improve the overall performance and reliability of the system.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 40V 3V 150A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 40V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 40V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

| **Parameter** | **Value** | **Unit** | **Description** |
|---------------------|---------------------|-------------|------------------------------------------------------------|
| **Package Type** | TO263 | - | Surface mount package for high power and high current applications with good heat dissipation. |
| **Configuration** | Single channel N-type | - | Designed for high current switching applications with fast switching performance. |
| **Maximum drain-source voltage (VDS)** | 40V | V | Maximum drain-source voltage of 40V is suitable for high-efficiency power conversion systems with low to medium voltage. |
| **Maximum gate-source voltage (VGS)** | ±20V | V | Allows high gate-source voltage for high-efficiency driving and switching control. |
| **Threshold voltage (Vth)** | 3V | V | Suitable for efficient and stable switching operation. |
| **On-resistance (RDS(ON))** | 2.5mΩ (@VGS=4.5V) | mΩ | Lower on-resistance reduces energy loss during switching. |
| **On-resistance (RDS(ON))** | 2mΩ (@VGS=10V) | mΩ | Lower on-resistance at higher gate-source voltage further reduces power loss. |
| **Maximum drain current (ID)** | 150A | A | High current carrying capability supports the design of high-power power supplies and drive systems. |
| **Technology type** | Trench | - | Trench technology improves conduction performance, optimizes current path, and reduces on-resistance. |

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Domain and module applications:

Applications and module examples

1. **High-efficiency power conversion and power electronics**
**STB270N04-VB** With extremely low on-resistance and high current carrying capacity, it is very suitable for use in high-power power converters, DC-AC inverters, and power electronic modules. In power management systems, low on-resistance (2mΩ) helps reduce power losses and improve conversion efficiency. This MOSFET performs well under high current loads and is suitable for power systems with higher power, such as server power supplies, UPS, and industrial power management systems.

2. **Motor drives and inverters**
**STB270N04-VB** is widely used in motor drive systems, especially in applications requiring high current, such as motor controllers and variable frequency drives. High current capability and low on-resistance enable it to provide high efficiency in motor drive systems, optimize energy transmission, and reduce energy losses and heat generation.

3. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In the power control systems of EVs and HEVs, **STB270N04-VB** can be used in battery management systems, motor drives, DC-DC converters, and power conversion modules. Due to its low on-resistance and high current carrying capacity, it can efficiently convert electricity, increase the range of EVs, and optimize the efficiency of the power system.

4. **High-frequency switching power supplies and LED driver power supplies**
Due to its low on-resistance and fast switching performance, **STB270N04-VB** is very suitable for high-frequency switching power supplies (such as DC-DC converters, LED driver power supplies, etc.). Its high current carrying capacity ensures stable operation even under high power requirements and effectively reduces energy losses during the conversion process.

5. **Renewable energy systems (such as solar inverters)**
**STB270N04-VB** is very useful in renewable energy applications, especially in solar power generation systems. It can efficiently perform DC to AC energy conversion, ensuring efficient operation of the system in high current environments. In addition, low on-resistance helps improve system efficiency and reliability and reduce unnecessary power loss.

6. **Battery Charger and Power Management System**
**STB270N04-VB** can also be used in battery chargers and power management systems, especially in high-efficiency high-power chargers. With its high current carrying capacity and low on-resistance, this MOSFET provides efficient and fast battery charging capabilities and can optimize the overall efficiency of the power management system.

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**STB270N04-VB** is suitable for multiple high-efficiency power systems and high-current switching applications, and is widely used in power conversion, industrial control, electric vehicles and renewable energy fields. With its low on-resistance, high current capability and high-efficiency switching performance, it is an ideal choice for high-power power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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