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STB22NS25ZT4-VB Product details
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Product Introduction
STB22NS25ZT4-VB is a high-efficiency single N-channel MOSFET in TO263 package, suitable for medium voltage and current switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 250V, and it can withstand a maximum drain current of 16A. Its on-resistance (RDS(ON)) is 230mΩ at VGS=10V. Compared with traditional MOSFETs, this device can provide higher efficiency and reduce power loss. STB22NS25ZT4-VB uses Trench technology, which makes this MOSFET excel in high efficiency and low heat loss. This MOSFET is particularly suitable for applications such as power management, power tools, inverters, etc., and can effectively improve system efficiency and reduce energy loss.
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STB22NS25ZT4-VB is a high-efficiency single N-channel MOSFET in TO263 package, suitable for medium voltage and current switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 250V, and it can withstand a maximum drain current of 16A. Its on-resistance (RDS(ON)) is 230mΩ at VGS=10V. Compared with traditional MOSFETs, this device can provide higher efficiency and reduce power loss. STB22NS25ZT4-VB uses Trench technology, which makes this MOSFET excel in high efficiency and low heat loss. This MOSFET is particularly suitable for applications such as power management, power tools, inverters, etc., and can effectively improve system efficiency and reduce energy loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | 230mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| Parameter | Specification | Description|
|-----------------|------------------------------------------|------------------------------------------|
| **Package** | TO263 | The TO263 package has good heat dissipation and strong mechanical protection, suitable for high power applications. |
| **Channel Configuration** | Single N-Channel | The single N-Channel configuration is suitable for a variety of power conversion and switch control applications. |
| **VDS** | 250V | The maximum drain-source voltage is 250V, suitable for applications in medium voltage environments. |
| **VGS** | ±20V | The maximum gate-source voltage is ±20V, supporting a wide range of control signals. |
| **Vth** | 3.5V | The startup voltage is 3.5V, suitable for common control voltages. |
| **RDS(ON)** | 230mΩ@VGS=10V | The on-resistance is 230mΩ at VGS=10V, reducing power loss and improving operating efficiency. |
| **ID** | 16A | The maximum drain current is 16A, suitable for applications with medium current loads. |
| **Technology** | Trench | Trench technology provides lower on-resistance and high efficiency for high current switching applications. |
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| Parameter | Specification | Description|
|-----------------|------------------------------------------|------------------------------------------|
| **Package** | TO263 | The TO263 package has good heat dissipation and strong mechanical protection, suitable for high power applications. |
| **Channel Configuration** | Single N-Channel | The single N-Channel configuration is suitable for a variety of power conversion and switch control applications. |
| **VDS** | 250V | The maximum drain-source voltage is 250V, suitable for applications in medium voltage environments. |
| **VGS** | ±20V | The maximum gate-source voltage is ±20V, supporting a wide range of control signals. |
| **Vth** | 3.5V | The startup voltage is 3.5V, suitable for common control voltages. |
| **RDS(ON)** | 230mΩ@VGS=10V | The on-resistance is 230mΩ at VGS=10V, reducing power loss and improving operating efficiency. |
| **ID** | 16A | The maximum drain current is 16A, suitable for applications with medium current loads. |
| **Technology** | Trench | Trench technology provides lower on-resistance and high efficiency for high current switching applications. |
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Domain and module applications：
Applications and module examples
1. **Power management system**
The STB22NS25ZT4-VB is ideal for power management systems, especially in DC-DC converter and power switching applications. Its maximum drain-source voltage of 250V and drain current capability of 16A enable it to efficiently handle medium voltage and current power applications. Due to its low on-resistance (RDS(ON)=230mΩ), it can effectively reduce energy losses and improve the overall efficiency of the system.
2. **Power tools**
This MOSFET is suitable for power regulation and drive modules in power tools. Its strong current handling capability and low on-resistance enable it to provide efficient current switching and stable working performance in the battery management and power conversion systems in power tools, thereby extending the service life of the tool and improving work efficiency.
3. **Inverter**
In solar inverters, power inverters and other devices, the STB22NS25ZT4-VB can be used as an efficient power conversion switch. Its 250V withstand voltage and 16A current capability enable it to efficiently convert energy in inverter systems, provide a stable output voltage, and reduce power losses, making it suitable for renewable energy systems.
4. **Battery Charger**
In battery charger applications, this MOSFET can be used in switching power supplies, especially for battery charging management. Its high current handling capability ensures that a stable and efficient current can be provided during battery charging, and its low on-resistance characteristics help reduce energy losses during charging and improve charging efficiency.
5. **LED Drive Circuit**
In LED drive circuits, the STB22NS25ZT4-VB can be used to provide stable current control and efficient power conversion. Its low RDS(ON) characteristics enable it to reduce heat generation during high-frequency switching operations, improve the efficiency and stability of the drive circuit, and is widely used in commercial lighting, street lighting and other applications.
6. **Electric vehicles (such as electric scooters, electric bicycles)**
In electric vehicles, the STB22NS25ZT4-VB MOSFET can be used to control motor drive systems and battery management systems. Its high current handling capability and low on-resistance characteristics enable it to provide efficient power transmission in electric vehicles, optimize battery use and extend battery life.
1. **Power management system**
The STB22NS25ZT4-VB is ideal for power management systems, especially in DC-DC converter and power switching applications. Its maximum drain-source voltage of 250V and drain current capability of 16A enable it to efficiently handle medium voltage and current power applications. Due to its low on-resistance (RDS(ON)=230mΩ), it can effectively reduce energy losses and improve the overall efficiency of the system.
2. **Power tools**
This MOSFET is suitable for power regulation and drive modules in power tools. Its strong current handling capability and low on-resistance enable it to provide efficient current switching and stable working performance in the battery management and power conversion systems in power tools, thereby extending the service life of the tool and improving work efficiency.
3. **Inverter**
In solar inverters, power inverters and other devices, the STB22NS25ZT4-VB can be used as an efficient power conversion switch. Its 250V withstand voltage and 16A current capability enable it to efficiently convert energy in inverter systems, provide a stable output voltage, and reduce power losses, making it suitable for renewable energy systems.
4. **Battery Charger**
In battery charger applications, this MOSFET can be used in switching power supplies, especially for battery charging management. Its high current handling capability ensures that a stable and efficient current can be provided during battery charging, and its low on-resistance characteristics help reduce energy losses during charging and improve charging efficiency.
5. **LED Drive Circuit**
In LED drive circuits, the STB22NS25ZT4-VB can be used to provide stable current control and efficient power conversion. Its low RDS(ON) characteristics enable it to reduce heat generation during high-frequency switching operations, improve the efficiency and stability of the drive circuit, and is widely used in commercial lighting, street lighting and other applications.
6. **Electric vehicles (such as electric scooters, electric bicycles)**
In electric vehicles, the STB22NS25ZT4-VB MOSFET can be used to control motor drive systems and battery management systems. Its high current handling capability and low on-resistance characteristics enable it to provide efficient power transmission in electric vehicles, optimize battery use and extend battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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