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STB22NM60N-VB Product details
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Product Introduction
**STB22NM60N-VB** is a single N-channel MOSFET in a TO263 package with a maximum drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 20A. This MOSFET utilizes SJ_Multi-EPI technology to provide a lower on-resistance (RDS(ON) = 160mΩ@VGS=10V), ensuring efficient power conversion and excellent switching performance in high-voltage applications. **STB22NM60N-VB** is suitable for power management, industrial power supplies, solar inverters and other fields that require high voltage and high current control. It can effectively improve the efficiency and stability of the system, while also having good thermal management performance.
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**STB22NM60N-VB** is a single N-channel MOSFET in a TO263 package with a maximum drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 20A. This MOSFET utilizes SJ_Multi-EPI technology to provide a lower on-resistance (RDS(ON) = 160mΩ@VGS=10V), ensuring efficient power conversion and excellent switching performance in high-voltage applications. **STB22NM60N-VB** is suitable for power management, industrial power supplies, solar inverters and other fields that require high voltage and high current control. It can effectively improve the efficiency and stability of the system, while also having good thermal management performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Parameter Description
| **Parameter** | **Value** | **Description** |
|-------------------------|-------------------------------|---------------------------------------------------------------|
| **Package Type** | TO263 | TO263 package design, suitable for high power applications, provides good thermal management and high current handling capabilities. |
| **Configuration** | Single N-channel | Single N-channel MOSFET structure, suitable for most power conversion circuits and motor drive applications. |
| **Drain-Source Voltage (VDS)** | 650V | Maximum drain-source voltage is 650V, suitable for high voltage and medium power applications. |
| **Gate-Source Voltage (VGS)** | ±30V | Gate-source voltage supports ±30V, adapting to a wide range of control and drive voltage requirements. |
| **Threshold Voltage (Vth)** | 3.5V | Threshold voltage is 3.5V, suitable for most power control systems. |
| **On-resistance (RDS(ON))** | 160mΩ (@VGS=10V) | Low on-resistance provides less power loss and enhances power transmission efficiency. |
| **Drain current (ID)** | 20A | Maximum drain current is 20A, suitable for medium to high power applications and capable of carrying large current loads. |
| **Technology** | SJ_Multi-EPI | SJ_Multi-EPI technology provides excellent conduction characteristics and efficient switching performance, suitable for high current and high frequency applications. |
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| **Parameter** | **Value** | **Description** |
|-------------------------|-------------------------------|---------------------------------------------------------------|
| **Package Type** | TO263 | TO263 package design, suitable for high power applications, provides good thermal management and high current handling capabilities. |
| **Configuration** | Single N-channel | Single N-channel MOSFET structure, suitable for most power conversion circuits and motor drive applications. |
| **Drain-Source Voltage (VDS)** | 650V | Maximum drain-source voltage is 650V, suitable for high voltage and medium power applications. |
| **Gate-Source Voltage (VGS)** | ±30V | Gate-source voltage supports ±30V, adapting to a wide range of control and drive voltage requirements. |
| **Threshold Voltage (Vth)** | 3.5V | Threshold voltage is 3.5V, suitable for most power control systems. |
| **On-resistance (RDS(ON))** | 160mΩ (@VGS=10V) | Low on-resistance provides less power loss and enhances power transmission efficiency. |
| **Drain current (ID)** | 20A | Maximum drain current is 20A, suitable for medium to high power applications and capable of carrying large current loads. |
| **Technology** | SJ_Multi-EPI | SJ_Multi-EPI technology provides excellent conduction characteristics and efficient switching performance, suitable for high current and high frequency applications. |
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Domain and module applications：
Application fields and module examples
1. **Power Management Systems**
**STB22NM60N-VB**'s 650V drain-source voltage and 20A drain current make it very suitable for power management systems, especially in high voltage and high power environments. It can be used in devices such as switching power supplies, DC-DC converters, and power adapters to help improve system conversion efficiency, reduce energy loss, and improve system stability.
2. **Solar Inverters**
The high voltage capability of this MOSFET makes it an ideal choice for solar inverters. Solar inverters need to convert direct current (DC) into alternating current (AC). **STB22NM60N-VB** can perform switching operations efficiently, optimize power conversion efficiency, and withstand higher voltage loads. It can improve the overall performance of the inverter, reduce energy loss, and improve system efficiency.
3. **Power Tools**
In power tools, **STB22NM60N-VB** can be used for power modules that drive motors. It supports high current output and has low on-resistance characteristics, which helps improve the power efficiency and battery life of the tool. In addition, its high voltage tolerance enables it to operate stably under high power requirements.
4. **Motor Drive Systems**
**STB22NM60N-VB** can be used in various motor drive applications, especially in scenarios that require high voltage and medium to high power. It can efficiently control the start, run, and stop processes of the motor, and is used in industrial automation, electric vehicle drives, and other high-power motor drive systems. Its excellent switching performance ensures stable operation of the system.
5. **Electric Vehicles**
In the power conversion system of electric vehicles (such as electric vehicles, hybrid vehicles, etc.), **STB22NM60N-VB** can provide the necessary high voltage and high current handling capabilities. It can be used in battery management systems (BMS) and power inverters to help manage the battery charging and discharging process, improve system efficiency and extend battery life.
6. **Industrial Power Supplies**
This MOSFET is very suitable for use in high-voltage industrial power supply equipment, especially in power control and energy management systems. **STB22NM60N-VB** can provide efficient power conversion in the fields of industrial automation, production line equipment, etc., helping to reduce system power consumption and enhance equipment reliability and safety.
7. **UPS (Uninterruptible Power Supplies)**
**STB22NM60N-VB** can be used in UPS systems to help efficiently manage the conversion and storage of power, ensuring the continued operation of critical equipment during power outages. It can withstand higher voltage and high current loads, improve the efficiency of UPS systems, reduce power loss and provide stable power.
8. **Switching Power Supplies**
This MOSFET is widely used in switching power supplies (SMPS), especially devices that require high-efficiency conversion, such as power adapters, LED drivers, communication power supplies, etc. Its low on-resistance and high voltage capability make it very suitable for effectively improving conversion efficiency and reducing power losses during high-frequency switching processes.
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1. **Power Management Systems**
**STB22NM60N-VB**'s 650V drain-source voltage and 20A drain current make it very suitable for power management systems, especially in high voltage and high power environments. It can be used in devices such as switching power supplies, DC-DC converters, and power adapters to help improve system conversion efficiency, reduce energy loss, and improve system stability.
2. **Solar Inverters**
The high voltage capability of this MOSFET makes it an ideal choice for solar inverters. Solar inverters need to convert direct current (DC) into alternating current (AC). **STB22NM60N-VB** can perform switching operations efficiently, optimize power conversion efficiency, and withstand higher voltage loads. It can improve the overall performance of the inverter, reduce energy loss, and improve system efficiency.
3. **Power Tools**
In power tools, **STB22NM60N-VB** can be used for power modules that drive motors. It supports high current output and has low on-resistance characteristics, which helps improve the power efficiency and battery life of the tool. In addition, its high voltage tolerance enables it to operate stably under high power requirements.
4. **Motor Drive Systems**
**STB22NM60N-VB** can be used in various motor drive applications, especially in scenarios that require high voltage and medium to high power. It can efficiently control the start, run, and stop processes of the motor, and is used in industrial automation, electric vehicle drives, and other high-power motor drive systems. Its excellent switching performance ensures stable operation of the system.
5. **Electric Vehicles**
In the power conversion system of electric vehicles (such as electric vehicles, hybrid vehicles, etc.), **STB22NM60N-VB** can provide the necessary high voltage and high current handling capabilities. It can be used in battery management systems (BMS) and power inverters to help manage the battery charging and discharging process, improve system efficiency and extend battery life.
6. **Industrial Power Supplies**
This MOSFET is very suitable for use in high-voltage industrial power supply equipment, especially in power control and energy management systems. **STB22NM60N-VB** can provide efficient power conversion in the fields of industrial automation, production line equipment, etc., helping to reduce system power consumption and enhance equipment reliability and safety.
7. **UPS (Uninterruptible Power Supplies)**
**STB22NM60N-VB** can be used in UPS systems to help efficiently manage the conversion and storage of power, ensuring the continued operation of critical equipment during power outages. It can withstand higher voltage and high current loads, improve the efficiency of UPS systems, reduce power loss and provide stable power.
8. **Switching Power Supplies**
This MOSFET is widely used in switching power supplies (SMPS), especially devices that require high-efficiency conversion, such as power adapters, LED drivers, communication power supplies, etc. Its low on-resistance and high voltage capability make it very suitable for effectively improving conversion efficiency and reducing power losses during high-frequency switching processes.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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