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STB21NM50N-VB Product details
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Product Introduction
**STB21NM50N-VB** is a high voltage single channel N-type MOSFET in TO263 package, designed for high voltage power switching applications. This MOSFET has a maximum drain-source voltage of 650V, suitable for high voltage environments, and can withstand large currents (maximum 20A). It uses **SJ_Multi-EPI** technology to make the on-resistance as low as 160mΩ @ VGS=10V, providing higher switching efficiency and lower power loss. **STB21NM50N-VB** performs well in high-frequency, high-voltage applications, and is particularly suitable for power management, industrial control, and electric vehicles.
Due to its high withstand voltage of 650V and excellent conduction performance, **STB21NM50N-VB** is suitable for high-power power systems, has good thermal performance, is suitable for high-frequency and high-current switching applications, and can effectively reduce energy losses.
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**STB21NM50N-VB** is a high voltage single channel N-type MOSFET in TO263 package, designed for high voltage power switching applications. This MOSFET has a maximum drain-source voltage of 650V, suitable for high voltage environments, and can withstand large currents (maximum 20A). It uses **SJ_Multi-EPI** technology to make the on-resistance as low as 160mΩ @ VGS=10V, providing higher switching efficiency and lower power loss. **STB21NM50N-VB** performs well in high-frequency, high-voltage applications, and is particularly suitable for power management, industrial control, and electric vehicles.
Due to its high withstand voltage of 650V and excellent conduction performance, **STB21NM50N-VB** is suitable for high-power power systems, has good thermal performance, is suitable for high-frequency and high-current switching applications, and can effectively reduce energy losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| **Parameter** | **Value** | **Unit** | **Description** |
|----------------------|---------------------|-----------------|-----------------------------------------|
| **Package type** | TO263 | - | Suitable for surface mounting, good heat dissipation, suitable for high power applications. |
| **Configuration** | Single channel N type | - | Designed for high voltage power switches, providing efficient switching control. |
| **Maximum drain-source voltage (VDS)** | 650V | V | High voltage tolerance, suitable for high power, high voltage power systems. |
| **Maximum gate-source voltage (VGS)** | ±30V | V | Higher gate-source voltage allows driving high voltage circuits and meets a wide range of application requirements. |
| **Threshold voltage (Vth)** | 3.5V | V | High threshold voltage ensures stable switching operation, adapting to high efficiency circuit design. |
| **On-resistance (RDS(ON))** | 160mΩ (@VGS=10V) | mΩ | Lower on-resistance reduces power loss in switching state. |
| **Maximum drain current (ID)** | 20A | A | Supports large current loads and is suitable for high current switching applications such as power conversion and motor drive. |
| **Technology type** | SJ_Multi-EPI | - | Using advanced SJ_Multi-EPI technology, on-resistance and switching performance are optimized. |
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| **Parameter** | **Value** | **Unit** | **Description** |
|----------------------|---------------------|-----------------|-----------------------------------------|
| **Package type** | TO263 | - | Suitable for surface mounting, good heat dissipation, suitable for high power applications. |
| **Configuration** | Single channel N type | - | Designed for high voltage power switches, providing efficient switching control. |
| **Maximum drain-source voltage (VDS)** | 650V | V | High voltage tolerance, suitable for high power, high voltage power systems. |
| **Maximum gate-source voltage (VGS)** | ±30V | V | Higher gate-source voltage allows driving high voltage circuits and meets a wide range of application requirements. |
| **Threshold voltage (Vth)** | 3.5V | V | High threshold voltage ensures stable switching operation, adapting to high efficiency circuit design. |
| **On-resistance (RDS(ON))** | 160mΩ (@VGS=10V) | mΩ | Lower on-resistance reduces power loss in switching state. |
| **Maximum drain current (ID)** | 20A | A | Supports large current loads and is suitable for high current switching applications such as power conversion and motor drive. |
| **Technology type** | SJ_Multi-EPI | - | Using advanced SJ_Multi-EPI technology, on-resistance and switching performance are optimized. |
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Domain and module applications：
Applications and module examples
1. **Power Conversion and Power Electronics**
**STB21NM50N-VB** has a high voltage withstand capability of 650V, which is very suitable for use in power converters, DC-AC inverters and other power electronic modules. In power management and high-power power supply systems, the low on-resistance (160mΩ) enables lower power loss and higher efficiency at high currents. This makes it excel in high-efficiency power supply design and high-voltage systems.
2. **Industrial Control Systems**
In industrial control systems, **STB21NM50N-VB** can be used in applications such as high-power motor drives, inverters, and servo systems. It is capable of handling higher voltages and currents, supporting efficient motor control and variable frequency regulation. Through its low on-resistance, the system's thermal losses are effectively controlled, thereby improving overall efficiency and reliability.
3. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In the drive systems of electric vehicles and hybrid electric vehicles, **STB21NM50N-VB** can be used for battery management systems, motor drives, and power conversion systems. Due to its high voltage withstand capability and low on-resistance, this MOSFET provides high efficiency and low energy loss in high power conversion applications in electric vehicles, helping to improve battery endurance and drive efficiency.
4. **Renewable Energy Systems (such as Solar Inverters)**
This MOSFET has important applications in solar inverters and other renewable energy systems. Its high withstand voltage and low on-resistance make it ideal for DC to AC energy conversion, able to maintain high efficiency under high current loads and reduce power losses. Whether it is solar power generation, wind energy systems or other renewable energy applications, this MOSFET ensures efficient and stable power conversion.
5. **High-frequency switching power supply**
Due to its low on-resistance and high switching efficiency, **STB21NM50N-VB** is also suitable for high-frequency switching power supplies (such as DC-DC converters, LED driver power supplies, etc.). It can effectively process high-frequency switching signals, ensure efficient and stable operation of the system, and reduce energy loss in frequent switching operations.
6. **Battery charger and power management system**
**STB21NM50N-VB** is widely used in high-power battery chargers and power management systems. Its high voltage tolerance and low on-resistance enable it to provide efficient energy transfer during charging, optimize system thermal management, and improve overall system reliability.
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**STB21NM50N-VB** is suitable for multiple high-voltage and high-current applications, including power conversion, electric vehicles, battery management systems, and renewable energy systems. With its high voltage resistance, high efficiency, and low power consumption, this MOSFET is an ideal choice for high-efficiency power systems.
1. **Power Conversion and Power Electronics**
**STB21NM50N-VB** has a high voltage withstand capability of 650V, which is very suitable for use in power converters, DC-AC inverters and other power electronic modules. In power management and high-power power supply systems, the low on-resistance (160mΩ) enables lower power loss and higher efficiency at high currents. This makes it excel in high-efficiency power supply design and high-voltage systems.
2. **Industrial Control Systems**
In industrial control systems, **STB21NM50N-VB** can be used in applications such as high-power motor drives, inverters, and servo systems. It is capable of handling higher voltages and currents, supporting efficient motor control and variable frequency regulation. Through its low on-resistance, the system's thermal losses are effectively controlled, thereby improving overall efficiency and reliability.
3. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In the drive systems of electric vehicles and hybrid electric vehicles, **STB21NM50N-VB** can be used for battery management systems, motor drives, and power conversion systems. Due to its high voltage withstand capability and low on-resistance, this MOSFET provides high efficiency and low energy loss in high power conversion applications in electric vehicles, helping to improve battery endurance and drive efficiency.
4. **Renewable Energy Systems (such as Solar Inverters)**
This MOSFET has important applications in solar inverters and other renewable energy systems. Its high withstand voltage and low on-resistance make it ideal for DC to AC energy conversion, able to maintain high efficiency under high current loads and reduce power losses. Whether it is solar power generation, wind energy systems or other renewable energy applications, this MOSFET ensures efficient and stable power conversion.
5. **High-frequency switching power supply**
Due to its low on-resistance and high switching efficiency, **STB21NM50N-VB** is also suitable for high-frequency switching power supplies (such as DC-DC converters, LED driver power supplies, etc.). It can effectively process high-frequency switching signals, ensure efficient and stable operation of the system, and reduce energy loss in frequent switching operations.
6. **Battery charger and power management system**
**STB21NM50N-VB** is widely used in high-power battery chargers and power management systems. Its high voltage tolerance and low on-resistance enable it to provide efficient energy transfer during charging, optimize system thermal management, and improve overall system reliability.
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**STB21NM50N-VB** is suitable for multiple high-voltage and high-current applications, including power conversion, electric vehicles, battery management systems, and renewable energy systems. With its high voltage resistance, high efficiency, and low power consumption, this MOSFET is an ideal choice for high-efficiency power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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