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STB20NM60-VB Product details

Product introduction:

STB20NM60-VB Product Introduction

**STB20NM60-VB** is a high-performance single N-channel MOSFET packaged in **TO263** package, designed for high voltage applications, with excellent switching performance and low on-resistance. Its maximum drain-source voltage (VDS) is 650V, suitable for high-voltage power systems, capable of handling higher currents, with a maximum drain current (ID) of 15A. This MOSFET adopts **SJ_Multi-EPI** technology, which can significantly reduce conduction loss and switching loss, and is widely used in power management, inverters, power tools, and industrial control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 650V 3.5V 15A 300mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 650V 3.5V 15A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 650V 3.5V 15A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
STB20NM60-VB Parameter Description

| **Parameter** | **Value** | **Description** |
|----------------------|--------------------|---------------------------------------------------------------|
| **Package Type** | TO263 | TO263 package design, suitable for high power applications, providing good thermal management performance. |
| **Configuration** | Single N-channel | Single N-channel configuration, suitable for high current control and power regulation applications. |
| **Drain-source voltage (VDS)** | 650V | The maximum drain-source voltage is 650V, suitable for high voltage applications, supporting high voltage power supply systems. |
| **Gate-source voltage (VGS)** | ±30V | The maximum gate-source voltage is ±30V, supporting a variety of control signals, suitable for a variety of working environments. |
| **Turn-on threshold voltage (Vth)** | 3.5V | The turn-on threshold voltage is 3.5V, ensuring stable turn-on and turn-off characteristics. |
| **On-resistance (RDS(ON))** | 300mΩ @ VGS=10V | Moderate on-resistance at high drive voltage ensures low switching loss. |
| **Maximum drain current (ID)** | 15A | Maximum drain current is 15A, suitable for applications with low to medium current requirements. |
| **Technology type** | SJ_Multi-EPI | Adopts SJ_Multi-EPI technology to optimize conductivity and switching speed and reduce energy loss. |

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Domain and module applications:

STB20NM60-VB Application Fields and Modules

#### 1. **High Voltage Power Management**
**Application Scenario:** In high voltage power management systems, STB20NM60-VB is used as a switching element to regulate voltage and current.
**Features and Advantages:** The 650V drain-source voltage of this MOSFET makes it very suitable for high voltage power systems, capable of efficient current regulation and voltage conversion, and is widely used in AC-DC converters and power modules.

#### 2. **Inverter**
**Application Scenario:** In solar inverters and uninterruptible power supply (UPS) systems, STB20NM60-VB is used for current and voltage control.
**Features and Advantages:** This MOSFET provides voltage tolerance up to 650V and stable switching performance, suitable for high voltage switching in inverter circuits, capable of providing efficient energy conversion and reducing energy loss.

#### 3. **Power tools**
**Application scenarios:** Power tools, such as electric drills and saws, use STB20NM60-VB to control current flow.
**Features and advantages:** In high-power power tools, this MOSFET can handle higher currents, ensuring stable operation of the tool under high loads, while its low switching losses and low on-resistance can improve the tool's efficiency.

#### 4. **Industrial control systems**
**Application scenarios:** In industrial control systems, STB20NM60-VB can be used to regulate and drive high-power motors.
**Features and advantages:** This MOSFET can effectively control current flow and is suitable for motor drive and high-power control in industrial environments, providing reliable performance and ensuring stable operation of the system.

#### 5. **Lighting control system**
**Application scenario:** In intelligent lighting systems, STB20NM60-VB is used as a current control element to adjust the current of LED or other lighting equipment.
**Features and advantages:** With high voltage tolerance and low on-resistance, it can efficiently drive high-power LED lighting systems, reduce power loss, and improve the energy efficiency of the system.

#### 6. **Battery Management System (BMS)**
**Application scenario:** In battery management systems, STB20NM60-VB is used for battery charge and discharge control, especially in the management of high-voltage batteries.
**Features and advantages:** This MOSFET has high stability and low energy loss in high-voltage applications, and is suitable for use in battery management systems to ensure efficient battery charge and discharge and extend service life.

#### 7. **High-frequency switching power supply**
**Application scenarios:** In high-frequency switching power supplies (SMPS), STB20NM60-VB is used for high-power switching and voltage conversion.
**Features and advantages:** This MOSFET can operate stably at high frequencies and is suitable for switching power supplies that require high efficiency and low power consumption, reducing energy loss and improving the operating efficiency of the system.

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**STB20NM60-VB** is a single N-channel MOSFET suitable for high voltage and medium current requirements. It has high voltage tolerance, low on-resistance and excellent switching performance. It is widely used in power management, inverters, power tools, industrial control and other fields. By adopting **SJ_Multi-EPI** technology, this MOSFET can effectively reduce energy loss, improve switching efficiency, and maintain stable performance in various high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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