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STB20NM50FD-VB Product details
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Product Introduction
STB20NM50FD-VB is a high-performance single N-channel MOSFET in TO263 package, suitable for high voltage and high current switching applications. Its maximum drain-source voltage (VDS) is 650V, and it can withstand a maximum drain current of 20A. The on-resistance (RDS(ON)) of this MOSFET is 160mΩ at VGS=10V, which provides better efficiency and lower power loss than traditional MOSFETs. STB20NM50FD-VB uses SJ_Multi-EPI technology, which provides lower on-resistance and higher voltage resistance, ensuring its stable operation in high voltage environments. This MOSFET is suitable for applications that require high voltage and high current processing, especially in power management, electric vehicles, industrial control and other fields.
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STB20NM50FD-VB is a high-performance single N-channel MOSFET in TO263 package, suitable for high voltage and high current switching applications. Its maximum drain-source voltage (VDS) is 650V, and it can withstand a maximum drain current of 20A. The on-resistance (RDS(ON)) of this MOSFET is 160mΩ at VGS=10V, which provides better efficiency and lower power loss than traditional MOSFETs. STB20NM50FD-VB uses SJ_Multi-EPI technology, which provides lower on-resistance and higher voltage resistance, ensuring its stable operation in high voltage environments. This MOSFET is suitable for applications that require high voltage and high current processing, especially in power management, electric vehicles, industrial control and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| Parameter | Specification | Description|
|-----------------|----------------------------------------|-----------------------------------------------------|
| **Package** | TO263 | The TO263 package has good heat dissipation and strong mechanical protection, suitable for high power applications. |
| **Channel Configuration** | Single N-Channel | Single N-Channel configuration, suitable for a variety of power conversion and switch control applications. |
| **VDS** | 650V | The maximum drain-source voltage is 650V, suitable for use in high-voltage switch control occasions. |
| **VGS** | ±30V | The maximum gate-source voltage is ±30V, supporting a wider range of control signals. |
| **Vth** | 3.5V | The startup voltage is 3.5V, suitable for common control voltages. |
| **RDS(ON)** | 160mΩ@VGS=10V | The on-resistance is 160mΩ at VGS=10V, which reduces power loss and improves working efficiency. |
| **ID** | 20A | The maximum drain current is 20A, suitable for applications with larger current handling. |
| **Technology** | SJ_Multi-EPI | SJ_Multi-EPI technology provides lower on-resistance and higher withstand voltage characteristics, enhancing the performance of MOSFET. |
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| Parameter | Specification | Description|
|-----------------|----------------------------------------|-----------------------------------------------------|
| **Package** | TO263 | The TO263 package has good heat dissipation and strong mechanical protection, suitable for high power applications. |
| **Channel Configuration** | Single N-Channel | Single N-Channel configuration, suitable for a variety of power conversion and switch control applications. |
| **VDS** | 650V | The maximum drain-source voltage is 650V, suitable for use in high-voltage switch control occasions. |
| **VGS** | ±30V | The maximum gate-source voltage is ±30V, supporting a wider range of control signals. |
| **Vth** | 3.5V | The startup voltage is 3.5V, suitable for common control voltages. |
| **RDS(ON)** | 160mΩ@VGS=10V | The on-resistance is 160mΩ at VGS=10V, which reduces power loss and improves working efficiency. |
| **ID** | 20A | The maximum drain current is 20A, suitable for applications with larger current handling. |
| **Technology** | SJ_Multi-EPI | SJ_Multi-EPI technology provides lower on-resistance and higher withstand voltage characteristics, enhancing the performance of MOSFET. |
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Domain and module applications：
Application areas and module examples
1. **Power management system**
STB20NM50FD-VB is suitable for various power management systems, especially in power conversion systems under high voltage and high current loads. Its maximum drain-source voltage of 650V and drain current capability of 20A make it very suitable for use in applications such as power switches and DC-DC converters, which can effectively improve power efficiency and reduce power losses.
2. **Electric vehicle (EV) battery management system (BMS)**
In the battery management system of electric vehicles, this MOSFET can be used as an efficient current control switch. Its high withstand voltage characteristics (650V) enable it to withstand high voltage and high current loads during battery charging and discharging, ensuring the stability and safety of the battery management system. Low RDS(ON) also helps to improve overall system efficiency and reduce energy losses.
3. **Industrial power supplies and power control equipment**
The STB20NM50FD-VB excels in industrial power supplies and power control equipment, especially in power switching and power conditioning systems that require high efficiency and high current support. Due to its low on-resistance (RDS(ON) = 160mΩ), this MOSFET can reduce heat generation and improve overall efficiency when operating under high current loads, and is widely used in equipment such as industrial power supplies, inverters, and power amplifiers.
4. **Renewable energy systems (such as solar inverters)**
Due to its high withstand voltage and low on-resistance, the STB20NM50FD-VB is also suitable for renewable energy systems such as solar inverters. In solar power generation systems, this MOSFET is used for power conversion and regulation, which can effectively improve system efficiency and reduce power loss, providing support for the efficient use of solar power.
5. **Motor drive system**
In motor drive systems, the STB20NM50FD-VB can be used as an efficient switching element to regulate the operation of the motor. Its strong current handling capability and low power consumption make it very suitable for applications such as power tools, household appliances, and robots. The high voltage tolerance ensures the stability and efficiency of the motor drive system in high voltage environments.
6. **UPS (Uninterruptible Power Supply) System**
In UPS systems, the STB20NM50FD-VB can be used for efficient power switching and energy management. Due to its excellent current and voltage handling capabilities, this MOSFET can ensure that the UPS system provides stable power to the load during power outages and minimizes energy losses, providing efficient and reliable power protection.
1. **Power management system**
STB20NM50FD-VB is suitable for various power management systems, especially in power conversion systems under high voltage and high current loads. Its maximum drain-source voltage of 650V and drain current capability of 20A make it very suitable for use in applications such as power switches and DC-DC converters, which can effectively improve power efficiency and reduce power losses.
2. **Electric vehicle (EV) battery management system (BMS)**
In the battery management system of electric vehicles, this MOSFET can be used as an efficient current control switch. Its high withstand voltage characteristics (650V) enable it to withstand high voltage and high current loads during battery charging and discharging, ensuring the stability and safety of the battery management system. Low RDS(ON) also helps to improve overall system efficiency and reduce energy losses.
3. **Industrial power supplies and power control equipment**
The STB20NM50FD-VB excels in industrial power supplies and power control equipment, especially in power switching and power conditioning systems that require high efficiency and high current support. Due to its low on-resistance (RDS(ON) = 160mΩ), this MOSFET can reduce heat generation and improve overall efficiency when operating under high current loads, and is widely used in equipment such as industrial power supplies, inverters, and power amplifiers.
4. **Renewable energy systems (such as solar inverters)**
Due to its high withstand voltage and low on-resistance, the STB20NM50FD-VB is also suitable for renewable energy systems such as solar inverters. In solar power generation systems, this MOSFET is used for power conversion and regulation, which can effectively improve system efficiency and reduce power loss, providing support for the efficient use of solar power.
5. **Motor drive system**
In motor drive systems, the STB20NM50FD-VB can be used as an efficient switching element to regulate the operation of the motor. Its strong current handling capability and low power consumption make it very suitable for applications such as power tools, household appliances, and robots. The high voltage tolerance ensures the stability and efficiency of the motor drive system in high voltage environments.
6. **UPS (Uninterruptible Power Supply) System**
In UPS systems, the STB20NM50FD-VB can be used for efficient power switching and energy management. Due to its excellent current and voltage handling capabilities, this MOSFET can ensure that the UPS system provides stable power to the load during power outages and minimizes energy losses, providing efficient and reliable power protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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