STB20NK50Z-VB Product details
Product introduction:
**STB20NK50Z-VB** is a high-efficiency single N-channel MOSFET in TO263 package, designed for high voltage and medium power applications. It has a maximum drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 20A, providing reliable power control and low on-resistance (RDS(ON)=160mΩ@VGS=10V). This product adopts SJ_Multi-EPI technology to ensure that it maintains low conduction losses under high voltage and high power conditions and has excellent switching performance. STB20NK50Z-VB is widely used in power modules, power tools, automotive electronics and industrial power systems, and can effectively improve the overall efficiency and reliability of the system.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| **Parameter** | **Value** | **Description** |
|-------------------------|-------------------------------|---------------------------------------------------------------|
| **Package Type** | TO263 | TO263 package design, suitable for high power applications, provides good thermal management and high current handling capabilities. |
| **Configuration** | Single N-channel | Single N-channel structure, suitable for most power conversion circuits and motor drive applications. |
| **Drain-Source Voltage (VDS)** | 650V | Maximum drain-source voltage is 650V, suitable for high voltage applications. |
| **Gate-Source Voltage (VGS)** | ±30V | Wide range of gate-source voltage support, compatible with different drive circuits and control logic. |
| **Threshold Voltage (Vth)** | 3.5V | Moderate threshold voltage, suitable for high-efficiency power control systems. |
| **On-resistance (RDS(ON))** | 160mΩ (@VGS=10V) | Low on-resistance ensures efficient power transfer and reduces power loss. |
| **Drain current (ID)** | 20A | Maximum drain current is 20A, suitable for medium power applications and can handle larger loads. |
| **Technology** | SJ_Multi-EPI | SJ_Multi-EPI technology provides excellent conduction characteristics and efficient switching performance for high current and high frequency applications. |
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Domain and module applications:
1. **Power Modules**
**STB20NK50Z-VB**'s 650V drain-source voltage and 20A drain current make it very suitable for high-voltage power modules. It is widely used in industrial power supplies, solar inverters, power tools and other fields. Due to its low on-resistance characteristics, it can effectively improve the power conversion efficiency of the power system, reduce energy loss, and optimize thermal management.
2. **Power Tools**
In power tools, **STB20NK50Z-VB** can be used in power management modules that drive motors and can handle higher power loads. By providing efficient power conversion, this MOSFET helps extend the working time of the tool and reduce power consumption, ensuring the stability and safety of the tool under high-power operation.
3. **Automotive Electronics**
**STB20NK50Z-VB**'s high voltage and high current handling capabilities make it suitable for the automotive electronics field, especially in power conversion modules in electric vehicles (EV) and hybrid electric vehicles (HEV). It can be used in battery management systems (BMS) to effectively control the battery charging and discharging process to ensure stable operation of the system.
4. **Motor Drives**
Due to its 20A drain current capability, **STB20NK50Z-VB** is suitable for a variety of motor drive applications. Whether in industrial automation, home appliances or transportation, this MOSFET can efficiently control the start, run and stop processes of the motor, providing a smoother motor drive experience.
5. **Switching Power Supplies**
In switching power supply (SMPS) applications, **STB20NK50Z-VB**'s high voltage and low on-resistance characteristics can improve power conversion efficiency, reduce losses and reduce heat. This MOSFET is suitable for high-efficiency power adapters, UPS power supplies, communication power supplies and other equipment, ensuring the stability and long-term operation of the equipment under high load conditions.
6. **Industrial Power Supplies**
**STB20NK50Z-VB** can be used for high-voltage power conversion applications in the industrial field, especially in power transmission and power management systems with high efficiency requirements. Its low on-resistance characteristics enable it to effectively improve system efficiency and reduce power losses, and is widely used in automation equipment, power control and energy management systems.
7. **UPS and Uninterruptible Power Supplies**
**STB20NK50Z-VB** can be used in UPS systems to help improve power conversion efficiency and provide stable power supply, especially in the face of voltage fluctuations and short-term power outages, to ensure the continuous operation of sensitive equipment. Its high voltage and high current carrying capacity are particularly suitable for application scenarios that require high power reliability.
8. **Power Amplifiers**
In power amplifiers (PA), **STB20NK50Z-VB** can be used as an efficient switching element, especially for RF power amplification in communication equipment. Its high voltage carrying capacity and low on-resistance can support efficient signal amplification, suitable for use in wireless communications, broadcasting equipment and other fields.
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