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STB200NF03T4-VB Product details
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Product Introduction
**STB200NF03T4-VB** is a single N-channel power MOSFET that uses advanced Trench technology and is packaged in TO-263 (D2PAK). It is designed for low-voltage, high-current switching applications. This MOSFET has an extremely low on-resistance (RDS(ON)), provides efficient power conversion and low-power operation, and can operate stably under various high-dynamic load environments. Its drain-source withstand voltage is 30V, the gate voltage range is ±20V, the gate threshold voltage is 1.7V, and the maximum continuous drain current is 150A, which is very suitable for applications that require high current handling and fast switching.
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**STB200NF03T4-VB** is a single N-channel power MOSFET that uses advanced Trench technology and is packaged in TO-263 (D2PAK). It is designed for low-voltage, high-current switching applications. This MOSFET has an extremely low on-resistance (RDS(ON)), provides efficient power conversion and low-power operation, and can operate stably under various high-dynamic load environments. Its drain-source withstand voltage is 30V, the gate voltage range is ±20V, the gate threshold voltage is 1.7V, and the maximum continuous drain current is 150A, which is very suitable for applications that require high current handling and fast switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| Parameter | Value | Description|
|----------------|-------------------|------------------------------------|
| **Package type** | TO-263 (D2PAK) | High power density surface mount package with excellent heat dissipation performance|
| **Channel configuration** | Single N-channel | Simplifies circuit design, suitable for single-channel current control|
| **Drain-source withstand voltage (VDS)** | 30V | Suitable for low-voltage switching circuits to meet low-voltage application requirements|
| **Gate-source withstand voltage (VGS)** | ±20V | Provides a wide operating gate voltage range to increase circuit stability|
| **Gate threshold voltage (Vth)** | 1.7V | Ensures reliable conduction at low gate voltage|
| **On-resistance (RDS(ON))** | 3.2mΩ@VGS=4.5V
2.3mΩ@VGS=10V | Low on-resistance, reduced energy loss, improved efficiency|
| **Continuous drain current (ID)** | 150A | Supports high current operation, suitable for high power applications|
| **Technology type** | Trench | Provides low on-resistance and high current density, optimizing power conversion efficiency|
| **Operating temperature range** | -55°C ~ 175°C | Supports a wide operating temperature range, suitable for harsh environments|
| **Switching speed** | Fast | High-frequency switching applications, adapting to fast switching requirements|
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| Parameter | Value | Description|
|----------------|-------------------|------------------------------------|
| **Package type** | TO-263 (D2PAK) | High power density surface mount package with excellent heat dissipation performance|
| **Channel configuration** | Single N-channel | Simplifies circuit design, suitable for single-channel current control|
| **Drain-source withstand voltage (VDS)** | 30V | Suitable for low-voltage switching circuits to meet low-voltage application requirements|
| **Gate-source withstand voltage (VGS)** | ±20V | Provides a wide operating gate voltage range to increase circuit stability|
| **Gate threshold voltage (Vth)** | 1.7V | Ensures reliable conduction at low gate voltage|
| **On-resistance (RDS(ON))** | 3.2mΩ@VGS=4.5V
2.3mΩ@VGS=10V | Low on-resistance, reduced energy loss, improved efficiency|
| **Continuous drain current (ID)** | 150A | Supports high current operation, suitable for high power applications|
| **Technology type** | Trench | Provides low on-resistance and high current density, optimizing power conversion efficiency|
| **Operating temperature range** | -55°C ~ 175°C | Supports a wide operating temperature range, suitable for harsh environments|
| **Switching speed** | Fast | High-frequency switching applications, adapting to fast switching requirements|
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Domain and module applications：
Application fields and module examples
1. **Automotive electronics**
- **Electric vehicle (EV) battery management system (BMS)**: STB200NF03T4-VB is suitable for battery management systems in electric vehicles, providing efficient power management, reducing heat loss and improving battery charging and discharging efficiency. Its low on-resistance enables low power consumption under high current conditions, extending battery life.
- **Motor driver**: This MOSFET is used for motor control, capable of providing high current and stable operation in motor drive systems, especially in high-efficiency on-board motor drive systems.
2. **Industrial automation**
- **Switching power supply (SMPS)**: In industrial applications, STB200NF03T4-VB can be used as a switching element in a switching power supply, especially for high-efficiency power supply systems, reducing system power consumption and improving energy conversion efficiency. Due to its low RDS(ON) characteristics, it is suitable for power conversion of large current loads.
- **Servo drive system**: This MOSFET can be used in industrial servo drive systems to improve the response speed and efficiency of servo motors and reduce energy loss through precise power control.
3. **Consumer electronics**
- **Fast charger**: The STB200NF03T4-VB plays an important role in fast chargers, especially in fast charging systems for mobile phones and laptops. Its low on-resistance and fast switching capability can significantly improve charging efficiency and reduce heat loss.
- **LED lighting driver**: Used in LED driver power supplies, it improves the overall efficiency of lighting systems through efficient power conversion and low power consumption design.
4. **Communication infrastructure**
- **PoE (Power over Ethernet) equipment**: The STB200NF03T4-VB can be used in PoE equipment to provide efficient power supply for network equipment, support higher power output, and reduce heat and power consumption.
- **Communication base station power module**: Its high current handling capability makes it play an important role in communication base stations, ensuring the stable operation of equipment under high load and extreme environment.
In general, **STB200NF03T4-VB** has significant advantages in low voltage and high current applications. Its low on-resistance and fast switching capability make it very suitable for multiple key modules in electric vehicles, industrial automation, consumer electronics and communication fields.
1. **Automotive electronics**
- **Electric vehicle (EV) battery management system (BMS)**: STB200NF03T4-VB is suitable for battery management systems in electric vehicles, providing efficient power management, reducing heat loss and improving battery charging and discharging efficiency. Its low on-resistance enables low power consumption under high current conditions, extending battery life.
- **Motor driver**: This MOSFET is used for motor control, capable of providing high current and stable operation in motor drive systems, especially in high-efficiency on-board motor drive systems.
2. **Industrial automation**
- **Switching power supply (SMPS)**: In industrial applications, STB200NF03T4-VB can be used as a switching element in a switching power supply, especially for high-efficiency power supply systems, reducing system power consumption and improving energy conversion efficiency. Due to its low RDS(ON) characteristics, it is suitable for power conversion of large current loads.
- **Servo drive system**: This MOSFET can be used in industrial servo drive systems to improve the response speed and efficiency of servo motors and reduce energy loss through precise power control.
3. **Consumer electronics**
- **Fast charger**: The STB200NF03T4-VB plays an important role in fast chargers, especially in fast charging systems for mobile phones and laptops. Its low on-resistance and fast switching capability can significantly improve charging efficiency and reduce heat loss.
- **LED lighting driver**: Used in LED driver power supplies, it improves the overall efficiency of lighting systems through efficient power conversion and low power consumption design.
4. **Communication infrastructure**
- **PoE (Power over Ethernet) equipment**: The STB200NF03T4-VB can be used in PoE equipment to provide efficient power supply for network equipment, support higher power output, and reduce heat and power consumption.
- **Communication base station power module**: Its high current handling capability makes it play an important role in communication base stations, ensuring the stable operation of equipment under high load and extreme environment.
In general, **STB200NF03T4-VB** has significant advantages in low voltage and high current applications. Its low on-resistance and fast switching capability make it very suitable for multiple key modules in electric vehicles, industrial automation, consumer electronics and communication fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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