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STB200N4F3-VB Product details

Product introduction:

Product Introduction
STB200N4F3-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and low voltage applications. Its maximum drain-source voltage (VDS) is 40V, and it can withstand a maximum drain current of 150A. The on-resistance (RDS(ON)) of this MOSFET is very low, 2mΩ at VGS=10V and 2.5mΩ at VGS=4.5V, which greatly reduces power loss under high current load and improves the overall efficiency of the system. STB200N4F3-VB uses Trench technology, which can provide better current conduction capability and higher switching speed, and is very suitable for power management and high-power current control systems that require high performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 40V 3V 150A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 40V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 40V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

| Parameter | Specification | Description |
|-----------------|----------------------------------------|-----------------------------------------------------|
| **Package** | TO263 | TO263 surface mount package, suitable for high current and power applications, with excellent heat dissipation characteristics. |
| **Channel Configuration** | Single N-channel | Single N-channel design, suitable for a wide range of power management and switch control applications. |
| **VDS** | 40V | Maximum drain-source voltage is 40V, suitable for low voltage, high current switch control applications. |
| **VGS** | ±20V | Maximum gate-source voltage is ±20V, supporting a variety of common drive signals. |
| **Vth** | 3V | Startup voltage is 3V, suitable for low voltage drive applications. |
| **RDS(ON)** | 2.5mΩ@VGS=4.5V, 2mΩ@VGS=10V | Ultra-low on-resistance reduces power loss and improves efficiency at high currents. |
| **ID** | 150A | Maximum drain current of 150A for applications that need to handle high currents. |
| **Technology** | Trench | Trench technology offers lower on-resistance and higher current carrying capability for high power applications. |

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Domain and module applications:

Application fields and module examples

1. **High-efficiency DC-DC converters**
STB200N4F3-VB is very suitable in high-efficiency DC-DC power converters, especially in situations where low on-resistance and high current support are required. Due to its ultra-low RDS(ON), it can effectively reduce power losses during power conversion and improve overall conversion efficiency. This makes it very popular in battery-powered systems, consumer electronic devices, and power management systems.

2. **Electric vehicle battery management system (BMS)**
In the battery management system of electric vehicles, STB200N4F3-VB can be used as a high-power current control switch to optimize the battery charging and discharging process. Its high current capability (150A) and low power consumption characteristics (low RDS(ON)) make it an ideal choice in battery management systems, ensuring efficient operation and extended battery life under high current loads.

3. **Motor drive system**
The STB200N4F3-VB is suitable for various motor drive applications, especially high-efficiency DC motor drive and brushless motor drive (BLDC). Its low on-resistance and high current capability enable it to cope with the high current demand when the motor starts, ensuring the stability and efficiency of the motor drive system, and is widely used in home appliances, robots, power tools and other equipment.

4. **Industrial power supply and power conversion equipment**
In industrial power supply and power conversion equipment, this MOSFET can be used as an efficient switching element to support efficient current transmission. In the fields of high-power power modules, UPS (uninterruptible power supply), and inverters, it can ensure efficient and stable operation of the equipment under long-term high-load operation with its low loss characteristics.

5. **Renewable energy systems (such as solar inverters)**
The STB200N4F3-VB can also be used in renewable energy systems such as solar inverters. Solar inverters require high-efficiency power conversion devices, and this MOSFET performs well under high current loads, which can effectively improve energy conversion efficiency and reduce system losses, making it a key component in solar power generation systems.

6. **Battery-powered systems for consumer electronics**
This MOSFET has been widely used in consumer electronics, especially in portable devices that require high power conversion and long-term use. It can optimize the power output of the battery, improve the overall energy efficiency of the device, and extend the battery life. It is suitable for smartphones, laptops and other mobile devices.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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