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STB18NM80-VB Product details
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1. STB18NM80-VB Product Introduction
STB18NM80-VB is a high-voltage single N-channel MOSFET packaged in TO263. This type of MOSFET has high voltage resistance and a maximum operating voltage of 800V, making it very suitable for high-voltage applications. It uses **SJ_Multi-EPI** technology, has low on-resistance (RDS(ON)) and a large current carrying capacity, and can withstand a maximum current of 20A, making it very suitable for high-performance applications such as power conversion, switching power supplies, and inverters. Its VGS can withstand a maximum of ±30V, and its threshold voltage is 3.5V, enabling it to work stably in a high-voltage environment.
STB18NM80-VB is a high-voltage single N-channel MOSFET packaged in TO263. This type of MOSFET has high voltage resistance and a maximum operating voltage of 800V, making it very suitable for high-voltage applications. It uses **SJ_Multi-EPI** technology, has low on-resistance (RDS(ON)) and a large current carrying capacity, and can withstand a maximum current of 20A, making it very suitable for high-performance applications such as power conversion, switching power supplies, and inverters. Its VGS can withstand a maximum of ±30V, and its threshold voltage is 3.5V, enabling it to work stably in a high-voltage environment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description of STB18NM80-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS (maximum drain-source voltage)**: 800V
- **VGS (maximum gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)** (on-resistance):
- 160mΩ @ VGS = 10V
- **ID (maximum drain current)**: 20A
- **Technology**: SJ_Multi-EPI (super junction multi-epitaxial technology)
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS (maximum drain-source voltage)**: 800V
- **VGS (maximum gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)** (on-resistance):
- 160mΩ @ VGS = 10V
- **ID (maximum drain current)**: 20A
- **Technology**: SJ_Multi-EPI (super junction multi-epitaxial technology)
Domain and module applications：
3. Application fields and module examples
STB18NM80-VB MOSFET is suitable for multiple fields and modules due to its excellent high voltage and high current performance. The following are several typical applications:
1. **Switching Power Supply (SMPS)**:
Due to its high withstand voltage and low on-resistance, STB18NM80-VB MOSFET is widely used in switching power supplies, especially in high voltage power conversion applications such as AC-DC power supplies, DC-DC converters, etc. It can improve the efficiency of the system, reduce energy loss, and is suitable for high voltage power supply design.
2. **Inverter**:
The high current carrying capacity of this MOSFET makes it very suitable for use in solar inverters, electric vehicle battery management systems and other fields. In inverter applications, STB18NM80-VB can provide efficient power conversion, especially for occasions involving high voltage DC to AC conversion.
3. **Power tools and home appliances**:
The voltage resistance and stability of STB18NM80-VB make it an important application in power management circuits in power tools and home appliances. It can provide stable switching operation in the power modules of these devices, ensuring efficient energy conversion and reliable operation of the equipment.
4. **Power amplifier and current regulation module**:
STB18NM80-VB also plays a significant role in various power amplifiers and current regulation modules, especially in high-frequency switching applications that require high voltage and large current handling capabilities, such as power control modules for communication equipment.
In general, STB18NM80-VB MOSFET is very suitable for high-voltage, high-power electronic applications due to its good high-voltage characteristics and low conduction losses, especially in switching power supplies, inverters, power tools and other high-efficiency equipment.
STB18NM80-VB MOSFET is suitable for multiple fields and modules due to its excellent high voltage and high current performance. The following are several typical applications:
1. **Switching Power Supply (SMPS)**:
Due to its high withstand voltage and low on-resistance, STB18NM80-VB MOSFET is widely used in switching power supplies, especially in high voltage power conversion applications such as AC-DC power supplies, DC-DC converters, etc. It can improve the efficiency of the system, reduce energy loss, and is suitable for high voltage power supply design.
2. **Inverter**:
The high current carrying capacity of this MOSFET makes it very suitable for use in solar inverters, electric vehicle battery management systems and other fields. In inverter applications, STB18NM80-VB can provide efficient power conversion, especially for occasions involving high voltage DC to AC conversion.
3. **Power tools and home appliances**:
The voltage resistance and stability of STB18NM80-VB make it an important application in power management circuits in power tools and home appliances. It can provide stable switching operation in the power modules of these devices, ensuring efficient energy conversion and reliable operation of the equipment.
4. **Power amplifier and current regulation module**:
STB18NM80-VB also plays a significant role in various power amplifiers and current regulation modules, especially in high-frequency switching applications that require high voltage and large current handling capabilities, such as power control modules for communication equipment.
In general, STB18NM80-VB MOSFET is very suitable for high-voltage, high-power electronic applications due to its good high-voltage characteristics and low conduction losses, especially in switching power supplies, inverters, power tools and other high-efficiency equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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