STB18NM60N-VB Product details
Product introduction:
STB18NM60N-VB is a single N-channel MOSFET in TO263 package with a maximum drain-source voltage (VDS) of 650V and a drain current (ID) capability of 15A. Based on SJ_Multi-EPI technology, this MOSFET has excellent voltage resistance, low on-resistance and superior switching performance. Its 3.5V threshold voltage (Vth) and 300mΩ on-resistance (RDS(ON)@VGS=10V) enable it to perform well in applications such as efficient power conversion and high-current load switching. STB18NM60N-VB is widely used in power electronics and industrial control systems, and can provide reliable and efficient performance in high-voltage and high-current working environments.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | 300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| **Parameter** | **Description** |
|-------------------------|--------------------------------------------|
| **Package type** | TO263 |
| **Channel configuration** | Single N-channel|
| **Maximum drain-source voltage (VDS)** | 650V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 300mΩ (VGS=10V) |
| **Maximum drain current (ID)** | 15A |
| **Technology** | SJ_Multi-EPI |
| **Operating temperature range** | -55°C to +150°C |
| **Switching speed** | Fast|
| **Package size** | TO263 Packages for high power applications |
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Domain and module applications:
1. **Power supply and power conversion**
STB18NM60N-VB is suitable for various power conversion modules, such as DC-DC converters, inverters, power factor correction (PFC) circuits, etc. In power management systems, this MOSFET can effectively improve energy conversion efficiency and reduce system losses, and its 650V withstand voltage ensures stable operation under high voltage environments. Its low on-resistance (300mΩ) effectively reduces switching losses and is an ideal choice for high-efficiency power supply designs.
2. **Industrial automation and motor drive**
In industrial automation systems, STB18NM60N-VB is a key component of motor control and drive systems. The high current carrying capacity and stable switching performance of this MOSFET enable it to play an excellent role in industrial motor drives, supporting efficient motor speed regulation, start-stop control, etc. It provides reliable working performance in environments with large current and voltage fluctuations, and is an important part of efficient automation control systems.
3. **Power tools and home appliances**
The high current capability and fast switching characteristics of the STB18NM60N-VB make it an ideal switching element in power tools and home appliances. This MOSFET can provide efficient current control and power conversion in home appliances and power tools, improve the energy efficiency of the equipment, and support long-term stable operation, especially suitable for use under high power loads.
4. **Uninterruptible power supply system (UPS)**
The STB18NM60N-VB is very suitable for UPS (uninterruptible power supply) systems due to its high withstand voltage and low on-resistance characteristics. In the UPS system, this MOSFET can effectively switch current, support efficient energy storage and conversion, and ensure the continuity and stability of power supply. It is particularly suitable for environments that require uninterruptible power support, such as critical equipment and data centers.
5. **Solar Inverter**
In solar photovoltaic power generation systems, the STB18NM60N-VB is widely used in inverter modules. It can convert the DC power generated by solar panels into AC power for home or industrial use. Due to its high withstand voltage of 650V and low on-resistance, it can effectively improve the conversion efficiency and stability of the inverter, adapt to harsh working environments, and ensure the efficient operation of the solar system.
6. **Electric Vehicle Charging and Battery Management System**
The STB18NM60N-VB is suitable for battery management systems and charging control systems for electric vehicles. In these systems, it can provide reliable current control, optimize the battery charging and discharging process, reduce energy loss, and improve charging efficiency. The high current carrying capacity and high withstand voltage characteristics of this MOSFET make it perform well in battery management and charging modules in the field of electric vehicles.
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STB18NM60N-VB has a high withstand voltage of 650V and low on-resistance, suitable for power electronics, industrial control, power management and other fields. It provides reliable guarantee for efficient power conversion and stable current switching, and is particularly suitable for use in power supply, automation system, electric vehicles and renewable energy modules.
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