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STB185N55F3-VB Product details
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Product Introduction
**STB185N55F3-VB** is a single N-channel power MOSFET using advanced Trench technology with excellent current handling capability and low on-resistance. This MOSFET is packaged in TO-263 (D2PAK) and is designed for high power density and low heat loss applications. It has a drain-source withstand voltage of 60V, a gate voltage range of ±20V, a gate threshold voltage of 3V, and a very low on-resistance (RDS(ON)), ensuring low power loss under high current conditions. Its maximum continuous drain current is 210A, which is suitable for a variety of applications requiring high efficiency and high current carrying capacity.
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**STB185N55F3-VB** is a single N-channel power MOSFET using advanced Trench technology with excellent current handling capability and low on-resistance. This MOSFET is packaged in TO-263 (D2PAK) and is designed for high power density and low heat loss applications. It has a drain-source withstand voltage of 60V, a gate voltage range of ±20V, a gate threshold voltage of 3V, and a very low on-resistance (RDS(ON)), ensuring low power loss under high current conditions. Its maximum continuous drain current is 210A, which is suitable for a variety of applications requiring high efficiency and high current carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| Parameter | Value | Description|
|----------------|-------------------|------------------------------------|
| **Package type** | TO-263 (D2PAK) | High power density surface mount package with excellent heat dissipation performance|
| **Channel configuration** | Single N-channel | Suitable for single current control and simplified circuit design|
| **Drain-source withstand voltage (VDS)** | 60V | Supports medium voltage range switching applications|
| **Gate-source withstand voltage (VGS)** | ±20V | Provides a wide operating gate voltage range|
| **Gate threshold voltage (Vth)** | 3V | Ensures reliable conduction at the lowest gate voltage|
| **On-resistance (RDS(ON))** | 12mΩ@VGS=4.5V
3.2mΩ@VGS=10V | Provides low power consumption and high efficiency for high current switching|
| **Continuous Drain Current (ID)** | 210A | Supports very high current applications|
| **Technology Type** | Trench | Provides lower on-resistance and higher current density using Trench technology|
| **Operating Temperature Range** | -55°C ~ 175°C | Supports a wide operating temperature range for harsh environments|
| **Switching Speed** | Fast | High-frequency switching applications for fast switching needs|
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| Parameter | Value | Description|
|----------------|-------------------|------------------------------------|
| **Package type** | TO-263 (D2PAK) | High power density surface mount package with excellent heat dissipation performance|
| **Channel configuration** | Single N-channel | Suitable for single current control and simplified circuit design|
| **Drain-source withstand voltage (VDS)** | 60V | Supports medium voltage range switching applications|
| **Gate-source withstand voltage (VGS)** | ±20V | Provides a wide operating gate voltage range|
| **Gate threshold voltage (Vth)** | 3V | Ensures reliable conduction at the lowest gate voltage|
| **On-resistance (RDS(ON))** | 12mΩ@VGS=4.5V
3.2mΩ@VGS=10V | Provides low power consumption and high efficiency for high current switching|
| **Continuous Drain Current (ID)** | 210A | Supports very high current applications|
| **Technology Type** | Trench | Provides lower on-resistance and higher current density using Trench technology|
| **Operating Temperature Range** | -55°C ~ 175°C | Supports a wide operating temperature range for harsh environments|
| **Switching Speed** | Fast | High-frequency switching applications for fast switching needs|
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Domain and module applications：
Applications and module examples
1. **Automotive electronics**
- **Electric vehicle powertrain**: The STB185N55F3-VB provides efficient current management and is ideal for motor drive systems and battery management systems (BMS) in electric vehicles (EVs). Due to its high current carrying capacity and low on-resistance, it can improve the power conversion efficiency of electric vehicles and extend the driving range.
- **Electric power steering system (EPS)**: This MOSFET can be used in electric power steering systems to provide stable power transmission and efficient current management, effectively reducing the power consumption of the system.
2. **Industrial automation**
- **Switching power supply (SMPS)**: The STB185N55F3-VB is suitable for industrial switching power supplies, especially in high-efficiency power supply systems, to help reduce energy consumption and improve conversion efficiency. It can be used in high-efficiency power modules with multiple outputs to reduce heat and power losses.
- **Inverter**: In photovoltaic inverters and wind inverters, the fast switching characteristics and high current capability of MOSFET enable it to effectively improve energy conversion efficiency and reduce energy losses.
3. **Consumer Electronics**
- **Fast Charger**: This MOSFET is suitable for high-power fast chargers, especially in charging systems for mobile phones, power tools and laptops. Its low RDS(ON) characteristics reduce heat loss and improve charging efficiency.
- **LED Driver**: In LED lighting systems, STB185N55F3-VB can be used as a switching device in the power conversion module to reduce heat and improve energy utilization.
4. **Communication Infrastructure**
- **Base Station Power Supply Module**: Its high current handling capability is very suitable for power modules for communication base stations, especially in large-scale communication equipment that requires high efficiency and stability.
- **PoE (Power over Ethernet) devices**: In PoE devices, the STB185N55F3-VB can be used to provide the efficient power required by network devices, ensuring stable operation of the devices and reducing power loss.
In general, **STB185N55F3-VB** is a MOSFET suitable for a variety of high-efficiency power conversion and current control applications. Its superior current carrying capacity and low on-resistance make it an ideal choice for a variety of applications such as electric vehicles, industrial automation, consumer electronics and communications.
1. **Automotive electronics**
- **Electric vehicle powertrain**: The STB185N55F3-VB provides efficient current management and is ideal for motor drive systems and battery management systems (BMS) in electric vehicles (EVs). Due to its high current carrying capacity and low on-resistance, it can improve the power conversion efficiency of electric vehicles and extend the driving range.
- **Electric power steering system (EPS)**: This MOSFET can be used in electric power steering systems to provide stable power transmission and efficient current management, effectively reducing the power consumption of the system.
2. **Industrial automation**
- **Switching power supply (SMPS)**: The STB185N55F3-VB is suitable for industrial switching power supplies, especially in high-efficiency power supply systems, to help reduce energy consumption and improve conversion efficiency. It can be used in high-efficiency power modules with multiple outputs to reduce heat and power losses.
- **Inverter**: In photovoltaic inverters and wind inverters, the fast switching characteristics and high current capability of MOSFET enable it to effectively improve energy conversion efficiency and reduce energy losses.
3. **Consumer Electronics**
- **Fast Charger**: This MOSFET is suitable for high-power fast chargers, especially in charging systems for mobile phones, power tools and laptops. Its low RDS(ON) characteristics reduce heat loss and improve charging efficiency.
- **LED Driver**: In LED lighting systems, STB185N55F3-VB can be used as a switching device in the power conversion module to reduce heat and improve energy utilization.
4. **Communication Infrastructure**
- **Base Station Power Supply Module**: Its high current handling capability is very suitable for power modules for communication base stations, especially in large-scale communication equipment that requires high efficiency and stability.
- **PoE (Power over Ethernet) devices**: In PoE devices, the STB185N55F3-VB can be used to provide the efficient power required by network devices, ensuring stable operation of the devices and reducing power loss.
In general, **STB185N55F3-VB** is a MOSFET suitable for a variety of high-efficiency power conversion and current control applications. Its superior current carrying capacity and low on-resistance make it an ideal choice for a variety of applications such as electric vehicles, industrial automation, consumer electronics and communications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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