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STB16N65M5-VB Product details

Product introduction:

Product Introduction

**STB16N65M5-VB** is a high-performance N-type MOSFET in TO263 package, designed for high voltage and high current applications. With a maximum drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 20A, it is suitable for power electronics applications that require high efficiency, low loss and high stability. The device has a gate voltage range of ±30V, ensuring flexible drive options. Its low on-resistance (RDS(ON) = 160mΩ @ VGS=10V) enables it to effectively reduce power loss and heat accumulation in high-frequency, high-current applications.

Using **SJ_Multi-EPI** technology, the device has good switching characteristics and superior thermal performance while ensuring high efficiency. Whether in power management, electric vehicles, industrial equipment or consumer electronics, **STB16N65M5-VB** is an efficient and reliable solution that can improve overall system efficiency and performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

| **Parameter** | **Value** | **Unit** | **Description** |
|---------------------|--------------------|-----------------|-----------------------------------------|
| **Package type** | TO263 | - | Surface mount package, supports high power heat dissipation|
| **Configuration** | Single channel N-type| - | N-channel MOSFET for high power and high frequency applications|
| **Maximum drain-source voltage (VDS)** | 650V | V | Suitable for high voltage power supply system, industrial control and electric vehicle circuits|
| **Maximum gate-source voltage (VGS)** | ±30V | V | Support wide gate voltage control range, adapt to a variety of drive circuits|
| **Threshold voltage (Vth)** | 3.5V | V | Moderate threshold voltage, reduce false triggering and improve system reliability|
| **On-resistance (RDS(ON))** | 160mΩ (@VGS = 10V) | mΩ | Lower on-resistance, reduced energy loss and improved efficiency|
| **Maximum drain current (ID)** | 20A | A | High current carrying capability for high power drive and high load applications|
| **Technology type** | SJ_Multi-EPI | - | Multi-junction trench technology for improved switching efficiency and reduced switching losses|

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Domain and module applications:

Applications and module examples

1. **Power management and conversion**
**STB16N65M5-VB** is mainly used in high-efficiency power management systems, especially in high-voltage power supplies and DC-DC converters. Due to its low on-resistance and high current carrying capacity, it can effectively reduce energy loss and optimize conversion efficiency. It is widely used in server power supplies, communication base station power supplies, and portable device power modules to ensure efficient and stable power supply.

2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In the field of electric vehicles and hybrid vehicles, this MOSFET is widely used in battery management systems (BMS) and inverters, especially for fast charging and discharging and high current power control. Its high voltage and high current handling capabilities enable it to efficiently drive electric motors and optimize the energy management of batteries and electric systems.

3. **Industrial Control and Motor Drive**
**STB16N65M5-VB** is suitable for industrial motor drive systems, such as variable frequency drives (VFDs), robot control, electric pumps, and drive modules in automated production lines. Its low on-resistance and fast switching characteristics enable it to maintain high-efficiency operation under high-load conditions, while improving the reliability and performance of industrial equipment.

4. **High-efficiency LED Drive**
This MOSFET excels in high-efficiency LED lighting drive circuits, providing stable current regulation to ensure the brightness and efficiency of LED light sources in a variety of applications. It is suitable for commercial, industrial, and residential lighting systems, especially in environments that require low power consumption and high stability.

5. **Electrical Equipment and Home Appliances**
**STB16N65M5-VB** is also widely used in switching power supplies in electrical equipment and home appliances, such as home refrigerators, air conditioners, and electrical kitchen appliances. Its high efficiency and low power loss characteristics enable these electrical products to maintain low energy consumption during long-term operation.

6. **Renewable Energy Applications**
In solar photovoltaic inverters and wind power generation systems, this MOSFET can provide efficient power conversion and management. Its high voltage and high current characteristics minimize power losses during energy conversion, thereby improving the energy efficiency of the entire system.

7. **Consumer Electronics**
**STB16N65M5-VB** In consumer electronics, it can also be used in power management modules, especially in modules that require high power and high frequency switching, such as battery chargers, wireless devices and audio systems. Its high efficiency and long life are crucial in these high-performance devices.

**STB16N65M5-VB** As a MOSFET with high voltage, low on-resistance and high current carrying capacity, it is suitable for multiple fields, including power management, electric vehicles, industrial control and consumer electronics. Through its high performance and reliability, it helps optimize system performance and energy efficiency in various applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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