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STB160N75F3-VB Product details

Product introduction:

Product Introduction

**STB160N75F3-VB** is a **high-performance single N-type MOSFET** in a **TO263** package, designed for high-current, high-efficiency power management and switching circuits. The device has a **drain-source voltage (VDS)** of **80V**, a gate-source voltage (VGS) of **±20V**, and a turn-on voltage (Vth) of **3V**, enabling it to operate efficiently in a wide range of applications. Its on-resistance is only **3.1mΩ** at **VGS=10V**, and it supports currents up to **230A**. It provides extremely low conduction losses and excellent switching characteristics through **Trench technology**, making it ideal for applications with high load and high efficiency requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 80V 3V 230A 3.1mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 80V 3V 230A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 80V 3V 230A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N

Parameter Detailed Description

| **Parameter Category** | **Parameter Value** | **Description** |
|----------------------|--------------------------|------------------------------------------------------------------|
| **Package Type** | TO263 | Provides excellent heat dissipation performance, suitable for high power applications. |
| **Polarity and Configuration** | Single Channel N-Type | Suitable for positive power management and high-efficiency current regulation. |
| **Drain-Source Voltage (VDS)** | 80V | Maximum drain-source voltage is **80V**, suitable for low-voltage to medium-voltage power systems. |
| **Gate-Source Voltage (VGS)** | ±20V | Wide gate-source voltage range, suitable for a variety of control signal sources. |
| **Turn-On Voltage (Vth)** | 3V | Turns on at **3V**, very suitable for logic level drive. |
| **On-resistance (RDS(ON))** | 3.1mΩ @ VGS=10V | Extremely low on-resistance, keeping power consumption low when operating at high current. |
| **Continuous drain current (ID)** | 230A | Supports current up to **230A**, suitable for high power applications. |
| **Technology** | Trench | Using Trench technology, providing low switching loss and higher efficiency. |

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Domain and module applications:

Application areas and module examples

1. **High-efficiency power management**
- **STB160N75F3-VB** is suitable for high-efficiency power management systems such as **DC-DC converters** and **AC-DC power conversion**. Its low on-resistance and high current carrying capacity can significantly reduce power loss and improve the overall efficiency of the system, so it is widely used in **server power systems**, **industrial power modules** and **high-power conversion devices**.

2. **Electric vehicles and charging infrastructure**
- In the power system of **electric vehicles (EVs)**, especially **battery management systems (BMS)** and **charging piles**, this MOSFET can be used as a high-current handling device. Due to its excellent conduction performance and high load capacity, it can provide efficient and stable power conversion during battery charging, reduce losses and increase charging speed.

3. **Industrial Automation and Motor Drive**
- In **Industrial Automation** and **Motor Drive**, **STB160N75F3-VB** can be applied to **Servo Motor Drive**, **Robot Control System** and other high-efficiency drive modules. Its high current carrying capacity and fast switching characteristics are very suitable for precision control and high-power drive systems, helping to improve the overall equipment efficiency and reliability.

4. **Solar and Renewable Energy Systems**
- In **Solar Inverters** and **Energy Storage Systems**, this MOSFET provides extremely low on-resistance, which can effectively improve the efficiency of power conversion and adapt to high current input and output requirements. It is used for power conversion and management in **Solar Photovoltaic Systems** to ensure that the system works at the highest efficiency and improve energy utilization.

5. **Power Tools and Consumer Electronics**
- **STB160N75F3-VB** is also suitable for **power tools** and **consumer electronic devices**, such as **electric drills**, **electric wrenches**, **high-power electronic devices**, etc. Its high current capability and low loss characteristics help extend battery life and increase power output, ensuring stable operation of the equipment under high load conditions.

6. **Communication and Data Center Equipment**
- This MOSFET is suitable for **communication base stations** and **data center power systems**. Its low on-resistance and high current capability make it play an important role in high-power power supply modules, helping the equipment to maintain stable operation under high load conditions, ensuring smooth data transmission and uninterrupted power supply.

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**STB160N75F3-VB** is an ideal choice for modern power management, electric vehicles, industrial automation and renewable energy systems with its **80V drain-source voltage**, **230A high current carrying capacity** and **ultra-low on-resistance**. It is widely used in high-efficiency power conversion, high-power drive, power tools, communication infrastructure and other fields, providing stable and reliable solutions for multiple high-load and high-efficiency applications.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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