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STB141NF55-VB Product details
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Product Introduction
**STB141NF55-VB** is a high-performance single N-channel MOSFET in a TO263 package, designed for efficient power conversion and control. Its maximum drain-source voltage (VDS) is 60V and its drain current (ID) is up to 150A, capable of handling high power and high current requirements. The on-resistance (RDS(ON)) of the MOSFET is as low as 4mΩ (VGS=10V), ensuring low power loss and high efficiency, and is suitable for a variety of application scenarios requiring high current density and reliability. It uses advanced trench technology, with low on-resistance, high switching speed and good thermal management capabilities, and is particularly suitable for electric vehicles, power management systems, industrial equipment and consumer electronics.
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**STB141NF55-VB** is a high-performance single N-channel MOSFET in a TO263 package, designed for efficient power conversion and control. Its maximum drain-source voltage (VDS) is 60V and its drain current (ID) is up to 150A, capable of handling high power and high current requirements. The on-resistance (RDS(ON)) of the MOSFET is as low as 4mΩ (VGS=10V), ensuring low power loss and high efficiency, and is suitable for a variety of application scenarios requiring high current density and reliability. It uses advanced trench technology, with low on-resistance, high switching speed and good thermal management capabilities, and is particularly suitable for electric vehicles, power management systems, industrial equipment and consumer electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Parameter Description
| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|--------------------------------------------------------------|
| **Package Type** | TO263 | Compact package, suitable for high power applications, providing efficient heat dissipation performance. |
| **Configuration** | Single N-channel | Suitable for unidirectional current control and efficient power conversion applications. |
| **Drain-Source Voltage (VDS)** | 60V | Maximum drain-source voltage is 60V, suitable for low to medium voltage power supply application scenarios. |
| **Gate-Source Voltage (VGS)** | ±20V | Supports a wide range of gate-source voltages, compatible with a variety of driver designs. |
| **Threshold Voltage (Vth)** | 3V | Moderate start-up voltage, suitable for low power control and efficient switching operation. |
| **On-resistance (RDS(ON))** | 4mΩ (@VGS=10V) | Extremely low on-resistance ensures high efficiency and low heat loss. |
| **Drain current (ID)** | 150A | Up to 150A drain current capability, suitable for applications with high current requirements. |
| **Technology** | Trench | Trench technology provides lower on-resistance and higher switching performance, improving overall efficiency. |
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| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|--------------------------------------------------------------|
| **Package Type** | TO263 | Compact package, suitable for high power applications, providing efficient heat dissipation performance. |
| **Configuration** | Single N-channel | Suitable for unidirectional current control and efficient power conversion applications. |
| **Drain-Source Voltage (VDS)** | 60V | Maximum drain-source voltage is 60V, suitable for low to medium voltage power supply application scenarios. |
| **Gate-Source Voltage (VGS)** | ±20V | Supports a wide range of gate-source voltages, compatible with a variety of driver designs. |
| **Threshold Voltage (Vth)** | 3V | Moderate start-up voltage, suitable for low power control and efficient switching operation. |
| **On-resistance (RDS(ON))** | 4mΩ (@VGS=10V) | Extremely low on-resistance ensures high efficiency and low heat loss. |
| **Drain current (ID)** | 150A | Up to 150A drain current capability, suitable for applications with high current requirements. |
| **Technology** | Trench | Trench technology provides lower on-resistance and higher switching performance, improving overall efficiency. |
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Domain and module applications：
Application fields and module examples
1. **Electric Vehicles and Renewable Energy**
The high current carrying capacity (150A) and low on-resistance (4mΩ) of the STB141NF55-VB make it very suitable for power modules and battery management systems (BMS) in electric vehicles. It can efficiently manage energy distribution, reduce power losses and increase battery life. In addition, in renewable energy applications such as solar inverters or wind energy control modules, the device is able to provide efficient power conversion.
2. **Industrial Equipment and Power Systems**
In industrial applications, this MOSFET can be used as the main switch or part of the power conversion unit in the motor drive. Its high current capability and thermal management performance make it excel in heavy-load motor drives and industrial-grade UPS systems.
3. **Consumer Electronics**
The STB141NF55-VB can be applied to high-efficiency power modules in consumer electronic devices, such as gaming devices, monitors, and high-end audio systems. Its low on-resistance reduces the energy loss of the device, thereby extending the service life of the device.
4. **Servers and Data Center Power Supplies**
In server power supplies and data center modules, this MOSFET is suitable for use as a part of a high-efficiency synchronous rectifier or DC-DC conversion module. Its low RDS(ON) helps improve power conversion efficiency and reduce system heat, thereby improving the overall energy efficiency of the data center.
5. **Power Tools**
In portable power tools, such as electric drills, electric saws, and electric wrenches, the high current handling capability of the STB141NF55-VB ensures stable operation of the device under high loads. Its high performance and compact package are particularly suitable for tool applications with space constraints but high power requirements.
6. **Telecommunication Equipment Power Modules**
In the power modules of communication base stations and related equipment, this MOSFET supports efficient power management and power conversion, meeting the stringent requirements of modern communication equipment for high performance and low power consumption.
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1. **Electric Vehicles and Renewable Energy**
The high current carrying capacity (150A) and low on-resistance (4mΩ) of the STB141NF55-VB make it very suitable for power modules and battery management systems (BMS) in electric vehicles. It can efficiently manage energy distribution, reduce power losses and increase battery life. In addition, in renewable energy applications such as solar inverters or wind energy control modules, the device is able to provide efficient power conversion.
2. **Industrial Equipment and Power Systems**
In industrial applications, this MOSFET can be used as the main switch or part of the power conversion unit in the motor drive. Its high current capability and thermal management performance make it excel in heavy-load motor drives and industrial-grade UPS systems.
3. **Consumer Electronics**
The STB141NF55-VB can be applied to high-efficiency power modules in consumer electronic devices, such as gaming devices, monitors, and high-end audio systems. Its low on-resistance reduces the energy loss of the device, thereby extending the service life of the device.
4. **Servers and Data Center Power Supplies**
In server power supplies and data center modules, this MOSFET is suitable for use as a part of a high-efficiency synchronous rectifier or DC-DC conversion module. Its low RDS(ON) helps improve power conversion efficiency and reduce system heat, thereby improving the overall energy efficiency of the data center.
5. **Power Tools**
In portable power tools, such as electric drills, electric saws, and electric wrenches, the high current handling capability of the STB141NF55-VB ensures stable operation of the device under high loads. Its high performance and compact package are particularly suitable for tool applications with space constraints but high power requirements.
6. **Telecommunication Equipment Power Modules**
In the power modules of communication base stations and related equipment, this MOSFET supports efficient power management and power conversion, meeting the stringent requirements of modern communication equipment for high performance and low power consumption.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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