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STB12NM50ND-VB Product details
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Product Introduction
STB12NM50ND-VB is a single N-channel MOSFET in TO263 package, designed for high voltage power switching and current control applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, capable of handling drain current (ID) up to 18A, with low on-resistance (RDS(ON)=430mΩ@VGS=10V), ensuring efficient operation under high load conditions. This MOSFET adopts Plannar technology, has good thermal management capabilities and high reliability, and is suitable for industrial and home appliance applications requiring high current and high voltage.
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STB12NM50ND-VB is a single N-channel MOSFET in TO263 package, designed for high voltage power switching and current control applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, capable of handling drain current (ID) up to 18A, with low on-resistance (RDS(ON)=430mΩ@VGS=10V), ensuring efficient operation under high load conditions. This MOSFET adopts Plannar technology, has good thermal management capabilities and high reliability, and is suitable for industrial and home appliance applications requiring high current and high voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 18A | 430mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| Parameter | Specification | Description|
|-----------------|------------------------------------|-----------------------------------------------------|
| **Package** | TO263 | The TO263 package is suitable for surface mounting and has good thermal management capabilities. |
| **Channel Configuration** | Single N-channel | Single N-type MOSFET design, suitable for common power switching and load control. |
| **VDS** | 650V | The maximum drain-source voltage is 650V, suitable for high-voltage power conversion and current control applications. |
| **VGS** | ±30V | The maximum gate-source voltage is ±30V, which meets the driving requirements of common power control signals. |
| **Vth** | 3.5V | The turn-on voltage is 3.5V, suitable for general logic level drive. |
| **RDS(ON)** | 430mΩ@VGS=10V | At VGS=10V, the on-resistance is 430mΩ, suitable for high-efficiency power conversion. |
| **ID** | 18A | The maximum drain current is 18A, suitable for higher power load applications. |
| **Technology** | Plannar | Using Plannar technology, it provides high withstand voltage and high reliability, suitable for high current control. |
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| Parameter | Specification | Description|
|-----------------|------------------------------------|-----------------------------------------------------|
| **Package** | TO263 | The TO263 package is suitable for surface mounting and has good thermal management capabilities. |
| **Channel Configuration** | Single N-channel | Single N-type MOSFET design, suitable for common power switching and load control. |
| **VDS** | 650V | The maximum drain-source voltage is 650V, suitable for high-voltage power conversion and current control applications. |
| **VGS** | ±30V | The maximum gate-source voltage is ±30V, which meets the driving requirements of common power control signals. |
| **Vth** | 3.5V | The turn-on voltage is 3.5V, suitable for general logic level drive. |
| **RDS(ON)** | 430mΩ@VGS=10V | At VGS=10V, the on-resistance is 430mΩ, suitable for high-efficiency power conversion. |
| **ID** | 18A | The maximum drain current is 18A, suitable for higher power load applications. |
| **Technology** | Plannar | Using Plannar technology, it provides high withstand voltage and high reliability, suitable for high current control. |
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Domain and module applications：
Application fields and module examples
1. **Power conversion and uninterruptible power supply system (UPS)**
STB12NM50ND-VB is very suitable for high voltage power conversion systems, such as DC-AC inverters and AC-DC power supplies. In these systems, MOSFET is a switching element that can efficiently convert energy and effectively reduce conduction losses. In UPS (uninterruptible power supply), the MOSFET can provide stable current and voltage output to ensure that the equipment continues to operate when the power is interrupted.
2. **Power tools and home appliances**
In power tools and home appliances, STB12NM50ND-VB can effectively control the working state of the motor as a power switching element, such as motor control in power tools, power conversion in home appliances such as air conditioners and refrigerators. Its high current and high voltage characteristics ensure that these devices can still work efficiently and stably under high load conditions.
3. **Electric Vehicle (EV) Battery Management System**
This MOSFET is also suitable for the battery management system (BMS) in electric vehicles. By controlling the battery charging and discharging process, the STB12NM50ND-VB can ensure the stability of the battery system under different loads and working conditions. In electric vehicles, it can be used in battery charging, energy recovery systems and power drive systems to provide efficient power conversion.
4. **Switching Power Supply (SMPS) and Power Factor Correction (PFC)**
In the switching power supply (SMPS) module, the STB12NM50ND-VB MOSFET can provide fast switching capability and maintain a low on-resistance, which can effectively improve the power conversion efficiency. In the power factor correction (PFC) circuit, it helps control the current flow and improve the power factor of the system, thereby improving energy utilization efficiency.
5. **Industrial Automation and Power Control Systems**
STB12NM50ND-VB can also be widely used in industrial automation and power control systems. For example, in power dispatching, variable frequency drive, and factory automation systems, MOSFET can ensure the stability and efficiency of equipment under high load operation through its high current carrying capacity and fast response characteristics.
Summary: STB12NM50ND-VB is a high-voltage, low on-resistance N-channel MOSFET suitable for power conversion, industrial automation, battery management, switching power supplies and other fields. Its 650V withstand voltage, 18A current capability and low on-resistance make it an ideal choice for high-power, high-efficiency applications.
1. **Power conversion and uninterruptible power supply system (UPS)**
STB12NM50ND-VB is very suitable for high voltage power conversion systems, such as DC-AC inverters and AC-DC power supplies. In these systems, MOSFET is a switching element that can efficiently convert energy and effectively reduce conduction losses. In UPS (uninterruptible power supply), the MOSFET can provide stable current and voltage output to ensure that the equipment continues to operate when the power is interrupted.
2. **Power tools and home appliances**
In power tools and home appliances, STB12NM50ND-VB can effectively control the working state of the motor as a power switching element, such as motor control in power tools, power conversion in home appliances such as air conditioners and refrigerators. Its high current and high voltage characteristics ensure that these devices can still work efficiently and stably under high load conditions.
3. **Electric Vehicle (EV) Battery Management System**
This MOSFET is also suitable for the battery management system (BMS) in electric vehicles. By controlling the battery charging and discharging process, the STB12NM50ND-VB can ensure the stability of the battery system under different loads and working conditions. In electric vehicles, it can be used in battery charging, energy recovery systems and power drive systems to provide efficient power conversion.
4. **Switching Power Supply (SMPS) and Power Factor Correction (PFC)**
In the switching power supply (SMPS) module, the STB12NM50ND-VB MOSFET can provide fast switching capability and maintain a low on-resistance, which can effectively improve the power conversion efficiency. In the power factor correction (PFC) circuit, it helps control the current flow and improve the power factor of the system, thereby improving energy utilization efficiency.
5. **Industrial Automation and Power Control Systems**
STB12NM50ND-VB can also be widely used in industrial automation and power control systems. For example, in power dispatching, variable frequency drive, and factory automation systems, MOSFET can ensure the stability and efficiency of equipment under high load operation through its high current carrying capacity and fast response characteristics.
Summary: STB12NM50ND-VB is a high-voltage, low on-resistance N-channel MOSFET suitable for power conversion, industrial automation, battery management, switching power supplies and other fields. Its 650V withstand voltage, 18A current capability and low on-resistance make it an ideal choice for high-power, high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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