STB120N4LF6-VB Product details
Product introduction:
STB120N4LF6-VB is a high-performance single N-channel MOSFET in TO263 package with extremely low on-resistance and high current carrying capacity. Its maximum drain-source voltage (VDS) is 40V, suitable for high-current, low-voltage switch control applications. This MOSFET uses Trench technology to provide low on-resistance (RDS(ON) = 5mΩ@VGS=10V) and high switching speed, and has excellent performance in applications such as high-efficiency power conversion, DC motor drive, and power management systems. It supports a maximum drain current of 100A and is suitable for high-power applications, especially in battery-driven power modules, electric vehicles, and high-efficiency consumer electronics.
---
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| **Parameter** | **Description** |
|-----------------------|---------------------------------------------|
| **Package type** | TO263 |
| **Channel type** | Single N-channel|
| **Drain-source voltage (VDS)** | 40V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 2.5V |
| **On-resistance (RDS(ON))** | 6mΩ (VGS=4.5V)
5mΩ (VGS=10V) |
| **Maximum drain current (ID)** | 100A |
| **Technology** | Trench technology|
---
Domain and module applications:
1. **Power management system**
STB120N4LF6-VB is widely used in high-efficiency power management modules due to its ultra-low on-resistance and high current carrying capacity. Especially in devices such as DC-DC converters and power adapters, this MOSFET can efficiently manage the flow of power, reduce power losses, and improve the energy efficiency of the system. In power-intensive applications, it can handle high currents and maintain low heat generation, improving the reliability and stability of the overall power module.
2. **Electric Vehicles (EV) and Battery Management Systems (BMS)**
In the battery management system (BMS) of electric vehicles, the STB120N4LF6-VB can be used for battery charge and discharge control to ensure efficient operation of the battery pack under high load conditions. Capable of carrying currents up to 100A, this MOSFET is very suitable as a current control switch in the battery pack of electric vehicles to ensure efficient operation of the system and extend battery life. Its low on-resistance effectively reduces switching losses and improves the overall efficiency of battery charging and discharging.
3. **Industrial Automation and Motor Drive**
STB120N4LF6-VB is suitable for industrial automation and motor drive systems, especially in devices that require high current drive. Its high current carrying capacity makes it an ideal choice in motor drive systems, capable of handling requirements such as high-speed motor starting, stopping, and variable speed regulation. The low RDS(ON) value ensures high efficiency and low heat loss in the motor drive circuit, improving the system's operating efficiency and durability.
4. **Consumer Electronics and Portable Devices**
In consumer electronic devices, STB120N4LF6-VB can be used in high-efficiency power conversion modules, especially for devices with high power requirements, such as fast chargers, LED driver power supplies, etc. Low on-resistance enables it to provide efficient current switching when handling large currents, and reduces power consumption through fast switching characteristics, making it suitable for high-performance consumer electronic products.
5. **Solar Power Generation System**
The application of STB120N4LF6-VB in solar power generation system is also crucial, especially in the process of converting DC power to AC power. The low on-resistance and high efficiency of MOSFET make it an ideal choice for solar inverters, which can effectively improve energy conversion efficiency, reduce heat generation, and reduce energy loss in the system.
6. **Battery Charging System and High-Efficiency Power Supply**
In the battery charging system, STB120N4LF6-VB as a switching element can efficiently control the flow of current and improve charging efficiency. Especially in applications using high-power batteries, such as power tools, electric scooters and other products, this MOSFET can provide fast and efficient current switching and ensure battery safety and long life during the charging process.
---
In summary, STB120N4LF6-VB is a high-performance MOSFET suitable for high-current, low-voltage switch control applications. With its ultra-low on-resistance and high current carrying capacity, it is widely used in power management, electric vehicles, battery management, motor drive, consumer electronics, solar energy systems and other fields. Its excellent switching characteristics and low power consumption make it play an important role in various high-efficiency power conversion and switching applications.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image