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STB120N4F6-VB Product details
Back to previous pageProduct introduction：
1. STB120N4F6-VB Product Introduction
STB120N4F6-VB is a single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. The maximum drain-source voltage (VDS) of this MOSFET is 40V, which is suitable for high-efficiency switching applications with low to medium voltage. Its threshold voltage (Vth) is 3V, which can be enabled at a lower gate voltage, suitable for low-power drive systems. The on-resistance (RDS(ON)) of STB120N4F6-VB is extremely low, only 2mΩ (at VGS=10V), which means it can provide efficient current transmission with lower conduction losses, thereby improving the energy efficiency of the overall system. The maximum drain current (ID) is up to 150A, making it very suitable for applications with high current requirements. Using Trench technology, STB120N4F6-VB provides optimized switching performance and better thermal management, ensuring that it maintains good performance during long-term operation.
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STB120N4F6-VB is a single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. The maximum drain-source voltage (VDS) of this MOSFET is 40V, which is suitable for high-efficiency switching applications with low to medium voltage. Its threshold voltage (Vth) is 3V, which can be enabled at a lower gate voltage, suitable for low-power drive systems. The on-resistance (RDS(ON)) of STB120N4F6-VB is extremely low, only 2mΩ (at VGS=10V), which means it can provide efficient current transmission with lower conduction losses, thereby improving the energy efficiency of the overall system. The maximum drain current (ID) is up to 150A, making it very suitable for applications with high current requirements. Using Trench technology, STB120N4F6-VB provides optimized switching performance and better thermal management, ensuring that it maintains good performance during long-term operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. STB120N4F6-VB Detailed Parameter Description
| **Parameter Category** | **Parameter Value** | **Description** |
|------------------------|---------------------------------------------|---------------------------------------------|
| **Package Type** | TO263 | Suitable for high power applications, providing good heat dissipation performance|
| **Channel Configuration** | Single-N-Channel | Single-N-Channel configuration, commonly used in switch control circuits|
| **Maximum Drain-Source Voltage (VDS)** | 40V | Suitable for applications in low to medium voltage ranges|
| **Gate Voltage Range (VGS)** | ±20V | Standard gate drive voltage range|
| **Threshold Voltage (Vth)** | 3V | Lower threshold voltage, suitable for low gate drive voltage applications|
| **On-resistance (RDS(ON))** | 2mΩ @ VGS=10V | Very low on-resistance, reducing power loss|
| **Drain current (ID)** | 150A | High current capability, suitable for high load applications|
| **Technology type** | Trench | Using Trench technology to optimize switching efficiency and thermal management|
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| **Parameter Category** | **Parameter Value** | **Description** |
|------------------------|---------------------------------------------|---------------------------------------------|
| **Package Type** | TO263 | Suitable for high power applications, providing good heat dissipation performance|
| **Channel Configuration** | Single-N-Channel | Single-N-Channel configuration, commonly used in switch control circuits|
| **Maximum Drain-Source Voltage (VDS)** | 40V | Suitable for applications in low to medium voltage ranges|
| **Gate Voltage Range (VGS)** | ±20V | Standard gate drive voltage range|
| **Threshold Voltage (Vth)** | 3V | Lower threshold voltage, suitable for low gate drive voltage applications|
| **On-resistance (RDS(ON))** | 2mΩ @ VGS=10V | Very low on-resistance, reducing power loss|
| **Drain current (ID)** | 150A | High current capability, suitable for high load applications|
| **Technology type** | Trench | Using Trench technology to optimize switching efficiency and thermal management|
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Domain and module applications：
3. Application fields and module examples of STB120N4F6-VB
1. **High-efficiency power converter**
STB120N4F6-VB is suitable for high-efficiency power conversion systems. Its ultra-low on-resistance (only 2mΩ) makes this MOSFET have extremely low power loss during power conversion, which can improve overall efficiency, especially in high-current conversion applications (such as DC-DC converters).
2. **Electric vehicle (EV) drive system**
This MOSFET has a drain current carrying capacity of 150A and is suitable for the drive system of electric vehicles. It can provide stable current support in motor control, battery management and charging modules. Its high current capability and low on-resistance can improve the efficiency and endurance performance of electric vehicle power systems.
3. **Power supply and distribution system**
In industrial power supply and distribution systems, STB120N4F6-VB can be used as a switching element. Its excellent thermal management and high current handling capability make it suitable for high-power load switching and power distribution modules, especially for scenarios requiring high current transmission.
4. **Solar Inverter**
The STB120N4F6-VB can be used in solar inverters as a switching element to efficiently convert direct current (DC) to alternating current (AC). Its low on-resistance and high current handling capability make it ideal for high power conversion and efficiency requirements in solar applications.
5. **Battery Management System (BMS)**
In a battery management system (BMS), the STB120N4F6-VB can be used to efficiently control the charging and discharging process of the battery. Its low RDS(ON) and high current capacity help improve the reliability and efficiency of the battery system, especially in applications with high power requirements.
6. **Power amplifier and audio equipment**
In audio systems and other power amplifier applications, the STB120N4F6-VB is suitable for use as a power switch to provide stable switching control of large currents. Its high-efficiency switching performance and low heat loss ensure stable operation and high-efficiency output of the system.
With its low on-resistance, high current capability and optimized switching performance, the STB120N4F6-VB is widely used in various high-efficiency and high-power power conversion, drive control and power management fields to ensure high efficiency and stability of the system.
1. **High-efficiency power converter**
STB120N4F6-VB is suitable for high-efficiency power conversion systems. Its ultra-low on-resistance (only 2mΩ) makes this MOSFET have extremely low power loss during power conversion, which can improve overall efficiency, especially in high-current conversion applications (such as DC-DC converters).
2. **Electric vehicle (EV) drive system**
This MOSFET has a drain current carrying capacity of 150A and is suitable for the drive system of electric vehicles. It can provide stable current support in motor control, battery management and charging modules. Its high current capability and low on-resistance can improve the efficiency and endurance performance of electric vehicle power systems.
3. **Power supply and distribution system**
In industrial power supply and distribution systems, STB120N4F6-VB can be used as a switching element. Its excellent thermal management and high current handling capability make it suitable for high-power load switching and power distribution modules, especially for scenarios requiring high current transmission.
4. **Solar Inverter**
The STB120N4F6-VB can be used in solar inverters as a switching element to efficiently convert direct current (DC) to alternating current (AC). Its low on-resistance and high current handling capability make it ideal for high power conversion and efficiency requirements in solar applications.
5. **Battery Management System (BMS)**
In a battery management system (BMS), the STB120N4F6-VB can be used to efficiently control the charging and discharging process of the battery. Its low RDS(ON) and high current capacity help improve the reliability and efficiency of the battery system, especially in applications with high power requirements.
6. **Power amplifier and audio equipment**
In audio systems and other power amplifier applications, the STB120N4F6-VB is suitable for use as a power switch to provide stable switching control of large currents. Its high-efficiency switching performance and low heat loss ensure stable operation and high-efficiency output of the system.
With its low on-resistance, high current capability and optimized switching performance, the STB120N4F6-VB is widely used in various high-efficiency and high-power power conversion, drive control and power management fields to ensure high efficiency and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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