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STB11NM80-VB Product details
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STB11NM80-VB Product Introduction
**STB11NM80-VB** is a high-performance single N-channel MOSFET in a **TO263** package, designed for high-voltage switching applications. This MOSFET has a maximum drain-source voltage (VDS) of 800V and is suitable for high-voltage power management, power conversion, and electric equipment control. Its maximum drain current (ID) is 15A and its on-resistance (RDS(ON)) is 380mΩ (at VGS=10V), which can provide stable and reliable performance in high-voltage and high-current applications. Using **SJ_Multi-EPI technology**, the STB11NM80-VB can provide excellent switching performance and high efficiency in various high-voltage power supply applications, and is particularly suitable for systems requiring low power consumption and efficient current transmission.
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**STB11NM80-VB** is a high-performance single N-channel MOSFET in a **TO263** package, designed for high-voltage switching applications. This MOSFET has a maximum drain-source voltage (VDS) of 800V and is suitable for high-voltage power management, power conversion, and electric equipment control. Its maximum drain current (ID) is 15A and its on-resistance (RDS(ON)) is 380mΩ (at VGS=10V), which can provide stable and reliable performance in high-voltage and high-current applications. Using **SJ_Multi-EPI technology**, the STB11NM80-VB can provide excellent switching performance and high efficiency in various high-voltage power supply applications, and is particularly suitable for systems requiring low power consumption and efficient current transmission.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 15A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
STB11NM80-VB Parameter Description
| **Parameter** | **Value** | **Description** |
|----------------------|---------------------|--------------------------------------------------------------|
| **Package Type** | TO263 | TO263 package is suitable for high power applications, easy to dissipate heat and provide stable electrical connections. |
| **Configuration** | Single N-channel | Single N-channel configuration is suitable for applications requiring a single control channel, providing high switching speed and stability. |
| **Drain-Source Voltage (VDS)** | 800V | The maximum drain-source voltage is 800V, suitable for high voltage power management and power conversion applications. |
| **Gate-Source Voltage (VGS)** | ±30V | The maximum gate-source voltage can reach ±30V, adapting to different voltage control requirements. |
| **Turn-On Threshold Voltage (Vth)** | 3.5V | The turn-on threshold voltage is 3.5V, ensuring that the MOSFET is turned on quickly under the appropriate control voltage. |
| **On-resistance (RDS(ON))** | 380mΩ @ VGS=10V | At VGS=10V, the on-resistance is 380mΩ, providing stable current transfer and low energy loss. |
| **Maximum drain current (ID)** | 15A | The maximum drain current is 15A, suitable for medium power applications and can carry large loads. |
| **Technology type** | SJ_Multi-EPI | Using SJ_Multi-EPI technology, it provides low on-resistance and efficient switching performance, suitable for high voltage and high frequency applications. |
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| **Parameter** | **Value** | **Description** |
|----------------------|---------------------|--------------------------------------------------------------|
| **Package Type** | TO263 | TO263 package is suitable for high power applications, easy to dissipate heat and provide stable electrical connections. |
| **Configuration** | Single N-channel | Single N-channel configuration is suitable for applications requiring a single control channel, providing high switching speed and stability. |
| **Drain-Source Voltage (VDS)** | 800V | The maximum drain-source voltage is 800V, suitable for high voltage power management and power conversion applications. |
| **Gate-Source Voltage (VGS)** | ±30V | The maximum gate-source voltage can reach ±30V, adapting to different voltage control requirements. |
| **Turn-On Threshold Voltage (Vth)** | 3.5V | The turn-on threshold voltage is 3.5V, ensuring that the MOSFET is turned on quickly under the appropriate control voltage. |
| **On-resistance (RDS(ON))** | 380mΩ @ VGS=10V | At VGS=10V, the on-resistance is 380mΩ, providing stable current transfer and low energy loss. |
| **Maximum drain current (ID)** | 15A | The maximum drain current is 15A, suitable for medium power applications and can carry large loads. |
| **Technology type** | SJ_Multi-EPI | Using SJ_Multi-EPI technology, it provides low on-resistance and efficient switching performance, suitable for high voltage and high frequency applications. |
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Domain and module applications：
STB11NM80-VB Application Fields and Modules
#### 1. **High-voltage power management system**
**Application scenarios:** STB11NM80-VB can be used in high-voltage power management systems, especially in power conversion and power regulation.
**Features and advantages:** The high drain-source voltage (VDS = 800V) and high current carrying capacity (ID = 15A) of this MOSFET make it very suitable for use in high-voltage environments, providing stable and reliable power regulation and conversion performance.
#### 2. **Power converters (such as AC-DC converters)**
**Application scenarios:** In power converters, STB11NM80-VB is used as an efficient switching element that can quickly and accurately convert power.
**Features and advantages:** Low on-resistance and high-frequency response capabilities enable it to reduce energy loss and improve conversion efficiency in power converters, especially for AC-DC conversion systems that require high efficiency and stable output.
#### 3. **Solar Inverter**
**Application Scenarios:** In solar inverters, the STB11NM80-VB can be used to convert the DC power generated by solar cells into AC power.
**Features and Advantages:** Due to its high voltage tolerance and low loss characteristics, this MOSFET can effectively improve the efficiency of the inverter, especially for applications with high voltage and high power requirements in solar systems.
#### 4. **Electric Vehicle (EV) Drive System**
**Application Scenarios:** In the electric drive system of electric vehicles, the STB11NM80-VB can be used to control the power and current regulation of the motor.
**Features and Advantages:** This MOSFET can withstand high voltages and has a low on-resistance, which is very suitable for high current management and efficient power transmission in electric vehicle drive systems.
#### 5. **Power tool power system**
**Application scenarios:** In the power system of power tools, the STB11NM80-VB can be used to achieve efficient current control and battery management.
**Features and advantages:** Its low on-resistance and high current carrying capacity enable it to provide stable current output to support the high load requirements of power tools.
#### 6. **High-frequency switching power supply (SMPS)**
**Application scenarios:** In the switching power supply system (SMPS), the STB11NM80-VB can be used to achieve efficient current switching.
**Features and advantages:** This MOSFET has a high switching speed and low on-resistance, which can achieve low power loss and high efficiency in high-frequency applications, and is widely used in various power modules and power electronic equipment.
#### 7. **Industrial Power Supply System**
**Application Scenarios:** The STB11NM80-VB can be used for power supply and regulation in industrial equipment, especially in industrial control systems under high voltage environments.
**Features and Advantages:** Its high voltage tolerance and stable switching performance make it very suitable for efficient power conversion and energy management in industrial power systems.
#### 8. **UPS Uninterruptible Power System**
**Application Scenarios:** In an uninterruptible power supply (UPS) system, the STB11NM80-VB can be used to ensure continuous power supply and efficient power conversion.
**Features and Advantages:** Due to its stable performance and high voltage tolerance, this MOSFET can efficiently perform current conversion in UPS systems to ensure power reliability and efficiency.
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**STB11NM80-VB** As a high voltage, high current carrying capacity N-channel MOSFET, it is widely used in high voltage power management, solar inverters, electric vehicle drive systems, power tool power systems and other fields. Through its low on-resistance and efficient switching performance, this MOSFET can significantly improve the efficiency of various power conversion systems and meet the needs of various high power and stable power output.
#### 1. **High-voltage power management system**
**Application scenarios:** STB11NM80-VB can be used in high-voltage power management systems, especially in power conversion and power regulation.
**Features and advantages:** The high drain-source voltage (VDS = 800V) and high current carrying capacity (ID = 15A) of this MOSFET make it very suitable for use in high-voltage environments, providing stable and reliable power regulation and conversion performance.
#### 2. **Power converters (such as AC-DC converters)**
**Application scenarios:** In power converters, STB11NM80-VB is used as an efficient switching element that can quickly and accurately convert power.
**Features and advantages:** Low on-resistance and high-frequency response capabilities enable it to reduce energy loss and improve conversion efficiency in power converters, especially for AC-DC conversion systems that require high efficiency and stable output.
#### 3. **Solar Inverter**
**Application Scenarios:** In solar inverters, the STB11NM80-VB can be used to convert the DC power generated by solar cells into AC power.
**Features and Advantages:** Due to its high voltage tolerance and low loss characteristics, this MOSFET can effectively improve the efficiency of the inverter, especially for applications with high voltage and high power requirements in solar systems.
#### 4. **Electric Vehicle (EV) Drive System**
**Application Scenarios:** In the electric drive system of electric vehicles, the STB11NM80-VB can be used to control the power and current regulation of the motor.
**Features and Advantages:** This MOSFET can withstand high voltages and has a low on-resistance, which is very suitable for high current management and efficient power transmission in electric vehicle drive systems.
#### 5. **Power tool power system**
**Application scenarios:** In the power system of power tools, the STB11NM80-VB can be used to achieve efficient current control and battery management.
**Features and advantages:** Its low on-resistance and high current carrying capacity enable it to provide stable current output to support the high load requirements of power tools.
#### 6. **High-frequency switching power supply (SMPS)**
**Application scenarios:** In the switching power supply system (SMPS), the STB11NM80-VB can be used to achieve efficient current switching.
**Features and advantages:** This MOSFET has a high switching speed and low on-resistance, which can achieve low power loss and high efficiency in high-frequency applications, and is widely used in various power modules and power electronic equipment.
#### 7. **Industrial Power Supply System**
**Application Scenarios:** The STB11NM80-VB can be used for power supply and regulation in industrial equipment, especially in industrial control systems under high voltage environments.
**Features and Advantages:** Its high voltage tolerance and stable switching performance make it very suitable for efficient power conversion and energy management in industrial power systems.
#### 8. **UPS Uninterruptible Power System**
**Application Scenarios:** In an uninterruptible power supply (UPS) system, the STB11NM80-VB can be used to ensure continuous power supply and efficient power conversion.
**Features and Advantages:** Due to its stable performance and high voltage tolerance, this MOSFET can efficiently perform current conversion in UPS systems to ensure power reliability and efficiency.
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**STB11NM80-VB** As a high voltage, high current carrying capacity N-channel MOSFET, it is widely used in high voltage power management, solar inverters, electric vehicle drive systems, power tool power systems and other fields. Through its low on-resistance and efficient switching performance, this MOSFET can significantly improve the efficiency of various power conversion systems and meet the needs of various high power and stable power output.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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