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STB100NH02LT4-VB Product details
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Product Introduction
**STB100NH02LT4-VB** is a single N-channel MOSFET in TO263 package, designed for high power applications. This MOSFET has an extremely low on-resistance (RDS(ON) of 2.7mΩ at VGS=4.5V, 2.4mΩ at VGS=10V), which enables it to have excellent efficiency and thermal performance under high current conditions. Its maximum drain-source voltage (VDS) is 30V and its maximum drain current (ID) reaches 98A, which can provide high-current and efficient switching control. This MOSFET adopts Trench technology and has efficient conduction and switching performance, suitable for power management, power conversion, and various applications requiring high current handling.
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**STB100NH02LT4-VB** is a single N-channel MOSFET in TO263 package, designed for high power applications. This MOSFET has an extremely low on-resistance (RDS(ON) of 2.7mΩ at VGS=4.5V, 2.4mΩ at VGS=10V), which enables it to have excellent efficiency and thermal performance under high current conditions. Its maximum drain-source voltage (VDS) is 30V and its maximum drain current (ID) reaches 98A, which can provide high-current and efficient switching control. This MOSFET adopts Trench technology and has efficient conduction and switching performance, suitable for power management, power conversion, and various applications requiring high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Parameter Description
| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|--------------------------------------------------------------|
| **Package Type** | TO263 | TO263 package is suitable for applications with high power and heat dissipation requirements, especially power modules and power systems. |
| **Configuration** | Single N-channel | Single N-channel MOSFET, suitable for unidirectional current control and high-efficiency power switching applications. |
| **Drain-Source Voltage (VDS)** | 30V | The maximum drain-source voltage is 30V, suitable for low-voltage, high-efficiency power management applications. |
| **Gate-Source Voltage (VGS)** | ±20V | The gate-source voltage range is ±20V, supporting a variety of drive voltages to adapt to different control circuits. |
| **Threshold Voltage (Vth)** | 1.7V | The threshold voltage is 1.7V, and low voltage startup helps achieve low power operation. |
| **On-resistance (RDS(ON))** | 2.7mΩ (@VGS=4.5V), 2.4mΩ (@VGS=10V) | The on-resistance is 2.7mΩ at VGS=4.5V and 2.4mΩ at VGS=10V, providing extremely low power loss. |
| **Drain current (ID)** | 98A | The maximum drain current is 98A, suitable for high-power applications that handle large currents. |
| **Technology** | Trench | Using Trench technology, it has lower on-resistance and efficient switching characteristics, suitable for high-performance applications. |
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| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|--------------------------------------------------------------|
| **Package Type** | TO263 | TO263 package is suitable for applications with high power and heat dissipation requirements, especially power modules and power systems. |
| **Configuration** | Single N-channel | Single N-channel MOSFET, suitable for unidirectional current control and high-efficiency power switching applications. |
| **Drain-Source Voltage (VDS)** | 30V | The maximum drain-source voltage is 30V, suitable for low-voltage, high-efficiency power management applications. |
| **Gate-Source Voltage (VGS)** | ±20V | The gate-source voltage range is ±20V, supporting a variety of drive voltages to adapt to different control circuits. |
| **Threshold Voltage (Vth)** | 1.7V | The threshold voltage is 1.7V, and low voltage startup helps achieve low power operation. |
| **On-resistance (RDS(ON))** | 2.7mΩ (@VGS=4.5V), 2.4mΩ (@VGS=10V) | The on-resistance is 2.7mΩ at VGS=4.5V and 2.4mΩ at VGS=10V, providing extremely low power loss. |
| **Drain current (ID)** | 98A | The maximum drain current is 98A, suitable for high-power applications that handle large currents. |
| **Technology** | Trench | Using Trench technology, it has lower on-resistance and efficient switching characteristics, suitable for high-performance applications. |
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Domain and module applications：
Application fields and module examples
1. **High-Efficiency Power Management Systems**
The STB100NH02LT4-VB has an extremely low on-resistance (RDS(ON)=2.4mΩ), which is very suitable for efficient power management systems, especially DC-DC converters and power regulators. It can handle currents up to 98A and is suitable for current control in high-power power systems, helping to improve system efficiency and reduce energy loss. It is widely used in data centers, industrial power supplies, communication base stations and other equipment.
2. **Electric Vehicles (EVs)**
In electric vehicles, the STB100NH02LT4-VB can be used in high-power applications such as battery management systems (BMS), motor drives and charging management systems. The MOSFET is capable of handling high currents (up to 98A) and provides efficient switching control during battery charging and discharging, drive systems, and power regulation. Its low on-resistance reduces power losses and helps extend battery life.
3. **Solar Inverters**
In solar inverter systems, the STB100NH02LT4-VB is used as a switching element to efficiently convert DC to AC, especially for low-voltage, high-load systems. Its low on-resistance and high current carrying capacity make it an ideal switching element for solar panel inverters and energy storage systems, which can improve the system's conversion efficiency and reduce heat generation.
4. **High-Power Power Modules**
In high-power power modules, the STB100NH02LT4-VB can provide stable current switching functions. Due to its extremely low on-resistance, it can maintain efficient operation under high load conditions, and is suitable for power management of industrial equipment, computer power supplies, servers and network equipment.
5. **UPS Uninterruptible Power Supply Systems**
STB100NH02LT4-VB can also be used in UPS power systems to help ensure that the system can quickly switch to backup battery power when the power is interrupted. This MOSFET provides efficient power conversion, especially when handling large currents. Its high current carrying capacity and low power loss can ensure efficient and stable operation of UPS systems.
6. **Power Electronics Devices**
This MOSFET is suitable for use in a variety of power electronic devices, such as motor controllers, power amplifiers, etc. Its high current carrying capacity and low on-resistance make it play an important role in the field of power electronics, especially in application scenarios that require high efficiency and low temperature.
7. **Power Adapters and Converters**
STB100NH02LT4-VB is also widely used in power adapters and converters. Its excellent switching characteristics enable it to provide efficient current control in high-power adapters and converters, and is suitable for chargers, mobile power supplies, communication power supplies and other equipment.
1. **High-Efficiency Power Management Systems**
The STB100NH02LT4-VB has an extremely low on-resistance (RDS(ON)=2.4mΩ), which is very suitable for efficient power management systems, especially DC-DC converters and power regulators. It can handle currents up to 98A and is suitable for current control in high-power power systems, helping to improve system efficiency and reduce energy loss. It is widely used in data centers, industrial power supplies, communication base stations and other equipment.
2. **Electric Vehicles (EVs)**
In electric vehicles, the STB100NH02LT4-VB can be used in high-power applications such as battery management systems (BMS), motor drives and charging management systems. The MOSFET is capable of handling high currents (up to 98A) and provides efficient switching control during battery charging and discharging, drive systems, and power regulation. Its low on-resistance reduces power losses and helps extend battery life.
3. **Solar Inverters**
In solar inverter systems, the STB100NH02LT4-VB is used as a switching element to efficiently convert DC to AC, especially for low-voltage, high-load systems. Its low on-resistance and high current carrying capacity make it an ideal switching element for solar panel inverters and energy storage systems, which can improve the system's conversion efficiency and reduce heat generation.
4. **High-Power Power Modules**
In high-power power modules, the STB100NH02LT4-VB can provide stable current switching functions. Due to its extremely low on-resistance, it can maintain efficient operation under high load conditions, and is suitable for power management of industrial equipment, computer power supplies, servers and network equipment.
5. **UPS Uninterruptible Power Supply Systems**
STB100NH02LT4-VB can also be used in UPS power systems to help ensure that the system can quickly switch to backup battery power when the power is interrupted. This MOSFET provides efficient power conversion, especially when handling large currents. Its high current carrying capacity and low power loss can ensure efficient and stable operation of UPS systems.
6. **Power Electronics Devices**
This MOSFET is suitable for use in a variety of power electronic devices, such as motor controllers, power amplifiers, etc. Its high current carrying capacity and low on-resistance make it play an important role in the field of power electronics, especially in application scenarios that require high efficiency and low temperature.
7. **Power Adapters and Converters**
STB100NH02LT4-VB is also widely used in power adapters and converters. Its excellent switching characteristics enable it to provide efficient current control in high-power adapters and converters, and is suitable for chargers, mobile power supplies, communication power supplies and other equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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