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STB100N10F7-VB Product details
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1. STB100N10F7-VB Product Introduction
STB100N10F7-VB is a single N-channel MOSFET in TO263 package, suitable for high-power switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 100V, which can withstand relatively high voltages and is suitable for applications that require medium voltage operation. Its threshold voltage (Vth) is 3V, which has a low turn-on threshold and is suitable for lower gate drive voltages. The on-resistance (RDS(ON)) of STB100N10F7-VB is only 4mΩ (at VGS=10V), providing extremely low conduction losses, which can significantly improve efficiency and reduce power losses. The maximum drain current (ID) is 140A, which means it can support high current loads and is suitable for high-power applications. This MOSFET uses Trench technology, which helps optimize switching speed and power efficiency, and is an ideal choice for high-efficiency energy conversion, power control and load switching applications.
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STB100N10F7-VB is a single N-channel MOSFET in TO263 package, suitable for high-power switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 100V, which can withstand relatively high voltages and is suitable for applications that require medium voltage operation. Its threshold voltage (Vth) is 3V, which has a low turn-on threshold and is suitable for lower gate drive voltages. The on-resistance (RDS(ON)) of STB100N10F7-VB is only 4mΩ (at VGS=10V), providing extremely low conduction losses, which can significantly improve efficiency and reduce power losses. The maximum drain current (ID) is 140A, which means it can support high current loads and is suitable for high-power applications. This MOSFET uses Trench technology, which helps optimize switching speed and power efficiency, and is an ideal choice for high-efficiency energy conversion, power control and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. STB100N10F7-VB Detailed Parameter Description
| **Parameter Category** | **Parameter Value** | **Description** |
|------------------------|---------------------------------------------|-----------------------------------------|
| **Package Type** | TO263 | Provides better heat dissipation performance, suitable for high-power applications|
| **Channel Configuration** | Single-N-Channel | Provides a single N-channel, suitable for common switch control circuits|
| **Maximum Drain-Source Voltage (VDS)** | 100V | Suitable for applications in the medium voltage range|
| **Gate Voltage Range (VGS)** | ±20V | Standard gate drive voltage range|
| **Threshold Voltage (Vth)** | 3V | Lower threshold voltage, suitable for low gate drive voltage applications|
| **On-resistance (RDS(ON))** | 4mΩ @ VGS=10V | Very low on-resistance, reducing power loss|
| **Drain current (ID)** | 140A | Supports high current applications, suitable for high power loads|
| **Technology type** | Trench | Adopts trench technology to improve switching efficiency and power transfer|
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| **Parameter Category** | **Parameter Value** | **Description** |
|------------------------|---------------------------------------------|-----------------------------------------|
| **Package Type** | TO263 | Provides better heat dissipation performance, suitable for high-power applications|
| **Channel Configuration** | Single-N-Channel | Provides a single N-channel, suitable for common switch control circuits|
| **Maximum Drain-Source Voltage (VDS)** | 100V | Suitable for applications in the medium voltage range|
| **Gate Voltage Range (VGS)** | ±20V | Standard gate drive voltage range|
| **Threshold Voltage (Vth)** | 3V | Lower threshold voltage, suitable for low gate drive voltage applications|
| **On-resistance (RDS(ON))** | 4mΩ @ VGS=10V | Very low on-resistance, reducing power loss|
| **Drain current (ID)** | 140A | Supports high current applications, suitable for high power loads|
| **Technology type** | Trench | Adopts trench technology to improve switching efficiency and power transfer|
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Domain and module applications：
3. Application fields and module examples of STB100N10F7-VB
1. **High-efficiency DC-DC converter**
STB100N10F7-VB is suitable for high-efficiency DC-DC converters. Due to its extremely low on-resistance (4mΩ), it can significantly reduce power loss and improve conversion efficiency. It is particularly suitable for high-current battery-powered devices and other power-intensive power modules.
2. **Motor drive system**
In motor control and drive systems, STB100N10F7-VB can provide stable current support, especially for power tools, electric vehicle drive systems and other motor applications that require high power drive. Its high current capacity (140A) ensures that it can withstand large loads and maintain efficient working performance.
3. **Load switch and power management**
STB100N10F7-VB can be used for load switch and power management applications. Its low on-resistance and high current carrying capacity make it ideal for load switches, relay replacements, and battery management systems. These applications require MOSFETs to efficiently switch large currents while keeping power losses low.
4. **Power amplifiers**
In power amplifiers for high-power audio systems and communication equipment, the STB100N10F7-VB provides ample current support to ensure stable and efficient power amplification. Its low on-resistance can reduce heat loss during amplification and enhance system reliability.
5. **Battery management system (BMS)**
The high current capability of the STB100N10F7-VB makes it an ideal choice in battery management systems (BMS), especially in high current charging and discharging scenarios. It can provide efficient switching control during battery charging and discharging, ensuring that the battery operates within a safe current range.
6. **Solar panels and energy management systems**
This MOSFET can be used in energy conversion and energy management systems for solar panels. Its high-efficiency switching performance can effectively convert solar energy into electrical energy and optimize the performance of energy storage devices, especially for applications requiring efficient energy conversion.
With its low on-resistance and high current carrying capacity, the STB100N10F7-VB excels in a variety of high-power and high-efficiency applications, especially in power management, drive control, and motor and load switch control systems.
1. **High-efficiency DC-DC converter**
STB100N10F7-VB is suitable for high-efficiency DC-DC converters. Due to its extremely low on-resistance (4mΩ), it can significantly reduce power loss and improve conversion efficiency. It is particularly suitable for high-current battery-powered devices and other power-intensive power modules.
2. **Motor drive system**
In motor control and drive systems, STB100N10F7-VB can provide stable current support, especially for power tools, electric vehicle drive systems and other motor applications that require high power drive. Its high current capacity (140A) ensures that it can withstand large loads and maintain efficient working performance.
3. **Load switch and power management**
STB100N10F7-VB can be used for load switch and power management applications. Its low on-resistance and high current carrying capacity make it ideal for load switches, relay replacements, and battery management systems. These applications require MOSFETs to efficiently switch large currents while keeping power losses low.
4. **Power amplifiers**
In power amplifiers for high-power audio systems and communication equipment, the STB100N10F7-VB provides ample current support to ensure stable and efficient power amplification. Its low on-resistance can reduce heat loss during amplification and enhance system reliability.
5. **Battery management system (BMS)**
The high current capability of the STB100N10F7-VB makes it an ideal choice in battery management systems (BMS), especially in high current charging and discharging scenarios. It can provide efficient switching control during battery charging and discharging, ensuring that the battery operates within a safe current range.
6. **Solar panels and energy management systems**
This MOSFET can be used in energy conversion and energy management systems for solar panels. Its high-efficiency switching performance can effectively convert solar energy into electrical energy and optimize the performance of energy storage devices, especially for applications requiring efficient energy conversion.
With its low on-resistance and high current carrying capacity, the STB100N10F7-VB excels in a variety of high-power and high-efficiency applications, especially in power management, drive control, and motor and load switch control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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