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ST25N10-VB Product details
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ST25N10-VB Product Introduction
**ST25N10-VB** is a high-performance single N-channel MOSFET in TO252 package with high current carrying capacity and low on-resistance, suitable for high-efficiency power management and power conversion applications. Its maximum drain-source voltage (VDS) is 100V and the maximum drain current (ID) is 40A, which can carry large currents and meet the needs of high-power loads. The on-resistance (RDS(ON)) of this MOSFET is 30mΩ at VGS = 10V and 35mΩ at VGS = 4.5V, ensuring its outstanding performance in high-efficiency power conversion. Using **Trench technology**, it provides lower on-resistance and better switching performance, suitable for applications in various power conversion, load switching, battery management systems and other fields.
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**ST25N10-VB** is a high-performance single N-channel MOSFET in TO252 package with high current carrying capacity and low on-resistance, suitable for high-efficiency power management and power conversion applications. Its maximum drain-source voltage (VDS) is 100V and the maximum drain current (ID) is 40A, which can carry large currents and meet the needs of high-power loads. The on-resistance (RDS(ON)) of this MOSFET is 30mΩ at VGS = 10V and 35mΩ at VGS = 4.5V, ensuring its outstanding performance in high-efficiency power conversion. Using **Trench technology**, it provides lower on-resistance and better switching performance, suitable for applications in various power conversion, load switching, battery management systems and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
ST25N10-VB parameter description
| **Parameter** | **Value** | **Description** |
|----------------------|---------------------|--------------------------------------------------------------|
| **Package type** | TO252 | TO252 package, suitable for low to medium power applications, with good heat dissipation and electrical performance. |
| **Configuration** | Single N-channel | Single N-channel configuration, suitable for high-efficiency switching and power control applications. |
| **Drain-source voltage (VDS)** | 100V | The maximum drain-source voltage is 100V, suitable for medium and low voltage power supply and power conversion applications. |
| **Gate-source voltage (VGS)** | ±20V | The maximum gate-source voltage can reach ±20V, which can meet different voltage control requirements. |
| **Turn-on threshold voltage (Vth)** | 1.8V | The turn-on threshold voltage is 1.8V, which ensures that the MOSFET turns on quickly at a lower voltage. |
| **On-resistance (RDS(ON))** | 30mΩ @ VGS=10V | At VGS=10V, the on-resistance is 30mΩ, ensuring efficient current transmission and switching operation, reducing energy loss. |
| **Maximum drain current (ID)** | 40A | The maximum drain current is 40A, suitable for applications with medium and high power supply and current requirements. |
| **Technology type** | Trench | Using Trench technology, it provides lower on-resistance and better switching performance, improving power conversion efficiency. |
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| **Parameter** | **Value** | **Description** |
|----------------------|---------------------|--------------------------------------------------------------|
| **Package type** | TO252 | TO252 package, suitable for low to medium power applications, with good heat dissipation and electrical performance. |
| **Configuration** | Single N-channel | Single N-channel configuration, suitable for high-efficiency switching and power control applications. |
| **Drain-source voltage (VDS)** | 100V | The maximum drain-source voltage is 100V, suitable for medium and low voltage power supply and power conversion applications. |
| **Gate-source voltage (VGS)** | ±20V | The maximum gate-source voltage can reach ±20V, which can meet different voltage control requirements. |
| **Turn-on threshold voltage (Vth)** | 1.8V | The turn-on threshold voltage is 1.8V, which ensures that the MOSFET turns on quickly at a lower voltage. |
| **On-resistance (RDS(ON))** | 30mΩ @ VGS=10V | At VGS=10V, the on-resistance is 30mΩ, ensuring efficient current transmission and switching operation, reducing energy loss. |
| **Maximum drain current (ID)** | 40A | The maximum drain current is 40A, suitable for applications with medium and high power supply and current requirements. |
| **Technology type** | Trench | Using Trench technology, it provides lower on-resistance and better switching performance, improving power conversion efficiency. |
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Domain and module applications：
ST25N10-VB Application Fields and Modules
#### 1. **Switching Power Supply (SMPS)**
**Application Scenario:** In the switching power supply (SMPS) system, ST25N10-VB can be used as a power switch for efficient power conversion.
**Features and Advantages:** Due to its low on-resistance (RDS(ON) = 30mΩ), it can provide low-loss and efficient current transmission in the switching power supply, especially suitable for medium-power power management applications.
#### 2. **DC-DC Converter**
**Application Scenario:** In the DC-DC converter, ST25N10-VB can be used for efficient current conversion and power regulation.
**Features and Advantages:** The MOSFET provides excellent conduction performance (RDS(ON) = 30mΩ@VGS=10V), making it very suitable for fast current switching and efficient conversion in DC-DC converters.
#### 3. **Battery Management System (BMS)**
**Application scenarios:** In the battery management system, ST25N10-VB can be used for battery charge and discharge management, current regulation and protection.
**Features and advantages:** Its low on-resistance and high current carrying capacity enable low-loss current transmission in the battery management system, extending battery life and improving charge and discharge efficiency.
#### 4. **Power Tools**
**Application scenarios:** In the drive system of power tools, ST25N10-VB can be used for efficient power conversion and current regulation.
**Features and advantages:** Due to its high current carrying capacity (40A), ST25N10-VB is suitable for high-power switch control in power tools and can maintain efficient operation under high loads.
#### 5. **Electric Vehicle (EV) Power Drive System**
**Application Scenarios:** In electric vehicle power drive systems, the ST25N10-VB is used as a switching element in the motor control module.
**Features and Advantages:** Due to its high current carrying capacity and low on-resistance, it can provide efficient power conversion for the electric drive system of electric vehicles and improve the efficiency of the power system.
#### 6. **Solar Inverter**
**Application Scenarios:** In solar inverters, the ST25N10-VB can be used for power conversion in maximum power point tracking (MPPT) circuits.
**Features and Advantages:** Its low on-resistance and high current carrying capacity are very suitable for current regulation and power conversion in solar inverters, helping to improve energy conversion efficiency.
#### 7. **Motor drive control**
**Application scenarios:** In motor drive systems, ST25N10-VB can be used as an efficient switching element for motor current regulation.
**Features and advantages:** The high current carrying capacity and low on-resistance of this MOSFET enable it to efficiently control current and optimize motor performance in motor drive control.
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ST25N10-VB is widely used in switching power supplies, DC-DC converters, battery management, power tools, electric vehicles, solar inverters and other fields with its low on-resistance (RDS(ON) = 30mΩ@VGS=10V) and high current carrying capacity (40A), as well as the use of Trench technology. This MOSFET can provide efficient current transmission and low-loss operation, which is particularly suitable for medium to high power application scenarios, ensuring high efficiency and stability of the equipment.
#### 1. **Switching Power Supply (SMPS)**
**Application Scenario:** In the switching power supply (SMPS) system, ST25N10-VB can be used as a power switch for efficient power conversion.
**Features and Advantages:** Due to its low on-resistance (RDS(ON) = 30mΩ), it can provide low-loss and efficient current transmission in the switching power supply, especially suitable for medium-power power management applications.
#### 2. **DC-DC Converter**
**Application Scenario:** In the DC-DC converter, ST25N10-VB can be used for efficient current conversion and power regulation.
**Features and Advantages:** The MOSFET provides excellent conduction performance (RDS(ON) = 30mΩ@VGS=10V), making it very suitable for fast current switching and efficient conversion in DC-DC converters.
#### 3. **Battery Management System (BMS)**
**Application scenarios:** In the battery management system, ST25N10-VB can be used for battery charge and discharge management, current regulation and protection.
**Features and advantages:** Its low on-resistance and high current carrying capacity enable low-loss current transmission in the battery management system, extending battery life and improving charge and discharge efficiency.
#### 4. **Power Tools**
**Application scenarios:** In the drive system of power tools, ST25N10-VB can be used for efficient power conversion and current regulation.
**Features and advantages:** Due to its high current carrying capacity (40A), ST25N10-VB is suitable for high-power switch control in power tools and can maintain efficient operation under high loads.
#### 5. **Electric Vehicle (EV) Power Drive System**
**Application Scenarios:** In electric vehicle power drive systems, the ST25N10-VB is used as a switching element in the motor control module.
**Features and Advantages:** Due to its high current carrying capacity and low on-resistance, it can provide efficient power conversion for the electric drive system of electric vehicles and improve the efficiency of the power system.
#### 6. **Solar Inverter**
**Application Scenarios:** In solar inverters, the ST25N10-VB can be used for power conversion in maximum power point tracking (MPPT) circuits.
**Features and Advantages:** Its low on-resistance and high current carrying capacity are very suitable for current regulation and power conversion in solar inverters, helping to improve energy conversion efficiency.
#### 7. **Motor drive control**
**Application scenarios:** In motor drive systems, ST25N10-VB can be used as an efficient switching element for motor current regulation.
**Features and advantages:** The high current carrying capacity and low on-resistance of this MOSFET enable it to efficiently control current and optimize motor performance in motor drive control.
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ST25N10-VB is widely used in switching power supplies, DC-DC converters, battery management, power tools, electric vehicles, solar inverters and other fields with its low on-resistance (RDS(ON) = 30mΩ@VGS=10V) and high current carrying capacity (40A), as well as the use of Trench technology. This MOSFET can provide efficient current transmission and low-loss operation, which is particularly suitable for medium to high power application scenarios, ensuring high efficiency and stability of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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