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ST13P10-VB Product details
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Product Introduction
ST13P10-VB is a high-performance single P-channel MOSFET in TO252 package, designed for low-voltage, high-efficiency switching applications. It has a maximum drain-source voltage (VDS) of -100V and a maximum gate-source voltage (VGS) of ±20V, suitable for various power management systems. ST13P10-VB has a low on-resistance (RDS(ON)) of 100mΩ (@VGS=10V) and a high maximum drain current (ID) of -16A. It uses Trench technology and has excellent switching characteristics and low switching losses. It is suitable for applications such as power switches, inverters and power tools.
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ST13P10-VB is a high-performance single P-channel MOSFET in TO252 package, designed for low-voltage, high-efficiency switching applications. It has a maximum drain-source voltage (VDS) of -100V and a maximum gate-source voltage (VGS) of ±20V, suitable for various power management systems. ST13P10-VB has a low on-resistance (RDS(ON)) of 100mΩ (@VGS=10V) and a high maximum drain current (ID) of -16A. It uses Trench technology and has excellent switching characteristics and low switching losses. It is suitable for applications such as power switches, inverters and power tools.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
| Parameter | Specification | Description|
|-----------------|----------------------------------|--------------------------------------------|
| **Package** | TO252 | The TO252 package is suitable for medium power switching applications and provides stable electrical performance. |
| **Channel Configuration** | Single P-channel | Provides efficient switching characteristics, suitable for low voltage applications and load switches. |
| **VDS** | -100V | The maximum drain-source voltage is -100V, suitable for high voltage applications. |
| **VGS** | ±20V | The maximum gate-source voltage is ±20V, which adapts to a wide range of drive voltage requirements. |
| **Vth** | -2V | The turn-on voltage is low, suitable for low gate voltage drive requirements. |
| **RDS(ON)** | 120mΩ@VGS=4.5V | Low on-resistance at VGS=4.5V, suitable for high-efficiency power switching applications. |
| **RDS(ON)** | 100mΩ@VGS=10V | Provides lower on-resistance at VGS=10V, optimizing power conversion efficiency. |
| **ID** | -16A | Maximum drain current is -16A, suitable for medium and high power load applications. |
| **Technology** | Trench | Using Trench technology, providing lower on-resistance and higher switching efficiency. |
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| Parameter | Specification | Description|
|-----------------|----------------------------------|--------------------------------------------|
| **Package** | TO252 | The TO252 package is suitable for medium power switching applications and provides stable electrical performance. |
| **Channel Configuration** | Single P-channel | Provides efficient switching characteristics, suitable for low voltage applications and load switches. |
| **VDS** | -100V | The maximum drain-source voltage is -100V, suitable for high voltage applications. |
| **VGS** | ±20V | The maximum gate-source voltage is ±20V, which adapts to a wide range of drive voltage requirements. |
| **Vth** | -2V | The turn-on voltage is low, suitable for low gate voltage drive requirements. |
| **RDS(ON)** | 120mΩ@VGS=4.5V | Low on-resistance at VGS=4.5V, suitable for high-efficiency power switching applications. |
| **RDS(ON)** | 100mΩ@VGS=10V | Provides lower on-resistance at VGS=10V, optimizing power conversion efficiency. |
| **ID** | -16A | Maximum drain current is -16A, suitable for medium and high power load applications. |
| **Technology** | Trench | Using Trench technology, providing lower on-resistance and higher switching efficiency. |
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Domain and module applications：
Applications and module examples
1. **DC-DC converter**
The ST13P10-VB is suitable for power switches in DC-DC converters. Its low on-resistance and high current carrying capacity make it an excellent performer in the voltage conversion process. This MOSFET is suitable for voltage conversion, buck and boost applications to improve conversion efficiency and reduce system heating.
2. **Power tools and battery management systems**
In power tools, the ST13P10-VB can be used for efficient power management to ensure efficient charging and discharging of batteries. Its high current carrying capacity and low on-resistance make it an ideal switching element in power tools and battery management systems (BMS), helping to reduce energy losses and improve the overall performance of the equipment.
3. **Automotive electronics**
The ST13P10-VB is suitable for automotive electronics, especially in battery management systems (BMS) and electric vehicle (EV) charging systems. Its low on-resistance provides a more efficient power switch function, ensuring efficient operation of the battery system and maintaining stability in harsh environments.
4. **Power supply module**
Due to its low on-resistance and high current carrying capacity, the ST13P10-VB is suitable for various power supply modules, such as AC-DC adapters, inverters, etc. These power modules can be used in home appliances, communication equipment, IT infrastructure and other fields to provide efficient and stable power supply.
5. **LED drive circuit**
In the LED drive circuit, the ST13P10-VB can be used as an efficient current switch to achieve efficient LED drive while reducing power loss. It can ensure stable current output, thereby extending the service life of the LED and reducing heat generation.
Summary: The ST13P10-VB is a low-voltage, high-efficiency P-channel MOSFET that is widely used in DC-DC conversion, power tools, battery management, automotive electronics, LED drive circuits and other fields. Its low on-resistance, high current carrying capability and Trench technology give it significant advantages in efficient power conversion and power management.
1. **DC-DC converter**
The ST13P10-VB is suitable for power switches in DC-DC converters. Its low on-resistance and high current carrying capacity make it an excellent performer in the voltage conversion process. This MOSFET is suitable for voltage conversion, buck and boost applications to improve conversion efficiency and reduce system heating.
2. **Power tools and battery management systems**
In power tools, the ST13P10-VB can be used for efficient power management to ensure efficient charging and discharging of batteries. Its high current carrying capacity and low on-resistance make it an ideal switching element in power tools and battery management systems (BMS), helping to reduce energy losses and improve the overall performance of the equipment.
3. **Automotive electronics**
The ST13P10-VB is suitable for automotive electronics, especially in battery management systems (BMS) and electric vehicle (EV) charging systems. Its low on-resistance provides a more efficient power switch function, ensuring efficient operation of the battery system and maintaining stability in harsh environments.
4. **Power supply module**
Due to its low on-resistance and high current carrying capacity, the ST13P10-VB is suitable for various power supply modules, such as AC-DC adapters, inverters, etc. These power modules can be used in home appliances, communication equipment, IT infrastructure and other fields to provide efficient and stable power supply.
5. **LED drive circuit**
In the LED drive circuit, the ST13P10-VB can be used as an efficient current switch to achieve efficient LED drive while reducing power loss. It can ensure stable current output, thereby extending the service life of the LED and reducing heat generation.
Summary: The ST13P10-VB is a low-voltage, high-efficiency P-channel MOSFET that is widely used in DC-DC conversion, power tools, battery management, automotive electronics, LED drive circuits and other fields. Its low on-resistance, high current carrying capability and Trench technology give it significant advantages in efficient power conversion and power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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