SSW65R190S-VB Product details
Product introduction:
**SSW65R190S-VB** is a single-channel N-type MOSFET in TO247 package with a maximum drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 20A, suitable for medium and high voltage power management systems. This MOSFET adopts SJ_Multi-EPI technology and has a low on-resistance (RDS(ON) = 160mΩ @ VGS = 10V), ensuring higher efficiency and lower heat loss in high power applications. Its threshold voltage (Vth) is 3.5V, suitable for power control systems that require higher switching performance and stability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
| **Parameter** | **Value** | **Unit** | **Description** |
|---------------------|---------------------|----------------|-------------------------------------|
| **Package type** | TO247 | - | High power package, suitable for high power supply management and efficient heat dissipation|
| **Configuration** | Single channel N-type| - | Suitable for high-side switch control and efficient power regulation|
| **Maximum drain-source voltage (VDS)** | 650V | V | High voltage control capability, suitable for industrial and power management applications|
| **Maximum gate-source voltage (VGS)** | ±30V | V | Supports higher gate voltage tolerance and adapts to a variety of drive circuits|
| **Threshold voltage (Vth)** | 3.5V | V | Provides efficient switching characteristics, ensuring low switching loss and stability|
| **On-resistance (RDS(ON))** | 160mΩ (@VGS=10V) | mΩ | Moderate on-resistance, low power consumption, suitable for high current switching applications|
| **Maximum drain current (ID)** | 20A | A | High current handling capability, suitable for high power power conversion systems|
| **Technology type** | SJ_Multi-EPI | - | Multi-EPI technology, providing excellent switching performance and low conduction loss|
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Domain and module applications:
1. **High-voltage power management system**
**SSW65R190S-VB** can be widely used in high-voltage power management systems, such as industrial power supplies, DC-DC converters, AC-DC converters, etc. Its maximum drain-source voltage of 650V and drain current of 20A enable it to effectively handle voltage regulation and current control of high-power power supplies, ensuring efficient operation of the power system.
2. **Motor drive system**
The high drain current (20A) and moderate on-resistance of this MOSFET make it suitable for use as a switching element in motor drive control, especially in high-power applications. It can be used in drive systems for power tools, electric vehicles, and industrial motors, providing stable current control and efficient power conversion.
3. **Solar inverter**
**SSW65R190S-VB**'s high voltage withstand capability and low on-resistance make it an ideal choice for solar inverters. It can efficiently convert the direct current of solar panels into alternating current, and is widely used in home and commercial solar power generation systems to improve the energy efficiency and stability of the system.
4. **Inverter**
In inverter applications, **SSW65R190S-VB** can be used as a power switch to adjust current and frequency to drive AC motors. Its excellent switching performance and low conduction loss help improve the efficiency of the inverter and reduce heat loss. It is suitable for industrial automation, air conditioning systems, and motor control.
5. **High-efficiency switching power supply**
**SSW65R190S-VB** performs well in high-efficiency switching power supply (SMPS) applications, especially in power adapters, TVs, computer power supplies and other products. Its high current carrying capacity and low on-resistance provide efficient current regulation for the power system, ensuring voltage stability and reducing energy loss.
6. **Automotive electronics**
In automotive electronics applications, especially in battery management systems (BMS) and on-board chargers for electric vehicles (EVs), **SSW65R190S-VB** can be used as a power switch to regulate battery voltage and optimize energy usage. It can handle higher voltage and current loads and is one of the core components in electric vehicles.
7. **High-voltage DC power supply (HVDC) system**
In high-voltage DC power supply (HVDC) and other similar high-voltage power transmission systems, **SSW65R190S-VB** can be used as an efficient power conversion switch element. Its high voltage handling capability and low on-resistance make it extremely efficient and reliable in these applications.
In summary, **SSW65R190S-VB** is a high-voltage, low conduction loss MOSFET suitable for a wide range of power management and power conversion applications, including motor drives, solar inverters, inverters, switching power supplies, etc. With its good switching performance and high current carrying capacity, this MOSFET has broad application prospects in industrial, power and automotive electronics.
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