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SSW2N80A-VB Product details
Back to previous pageProduct introduction：
1. SSW2N80A-VB Product Introduction
SSW2N80A-VB is a single N-channel MOSFET in TO263 package, designed for high voltage applications. It has a maximum drain-source voltage (VDS) of 800V, enabling it to operate in environments requiring high voltage tolerance. The threshold voltage (Vth) of this MOSFET is 3.5V, which is suitable for operation under typical gate drive voltages, ensuring stable switching performance. The on-resistance (RDS(ON)) of SSW2N80A-VB is 850mΩ (at VGS=10V), which is suitable for medium current applications. The maximum drain current (ID) is 7A, which can meet a variety of power requirements, and uses SJ_Multi-EPI technology, which helps to improve efficiency and reduce switching losses.
This MOSFET is suitable for various power converters, motor drive circuits and other high voltage applications, providing efficient and reliable switching control.
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SSW2N80A-VB is a single N-channel MOSFET in TO263 package, designed for high voltage applications. It has a maximum drain-source voltage (VDS) of 800V, enabling it to operate in environments requiring high voltage tolerance. The threshold voltage (Vth) of this MOSFET is 3.5V, which is suitable for operation under typical gate drive voltages, ensuring stable switching performance. The on-resistance (RDS(ON)) of SSW2N80A-VB is 850mΩ (at VGS=10V), which is suitable for medium current applications. The maximum drain current (ID) is 7A, which can meet a variety of power requirements, and uses SJ_Multi-EPI technology, which helps to improve efficiency and reduce switching losses.
This MOSFET is suitable for various power converters, motor drive circuits and other high voltage applications, providing efficient and reliable switching control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | 850mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description of SSW2N80A-VB
| **Parameter category** | **Parameter value** | **Description** |
|-----------------------|--------------------------------------------|---------------------------------------------|
| **Package type** | TO263 | Standard package suitable for high voltage applications with excellent heat dissipation performance|
| **Channel configuration** | Single-N-Channel | Provides a single N-channel, suitable for general switch control circuits|
| **Maximum drain-source voltage** | 800V | Suitable for high voltage power supply and load control|
| **Gate voltage range** | ±30V | Suitable for standard gate drive voltage range|
| **Threshold voltage (Vth)** | 3.5V | Suitable for operation within the conventional gate voltage range|
| **On-resistance (RDS(ON))** | 850mΩ @ VGS=10V | Lower on-resistance helps reduce switching losses|
| **Drain current (ID)** | 7A | Suitable for medium power applications, meeting most current requirements|
| **Technology type** | SJ_Multi-EPI | Multi-gate technology optimization, improving switching performance and efficiency|
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| **Parameter category** | **Parameter value** | **Description** |
|-----------------------|--------------------------------------------|---------------------------------------------|
| **Package type** | TO263 | Standard package suitable for high voltage applications with excellent heat dissipation performance|
| **Channel configuration** | Single-N-Channel | Provides a single N-channel, suitable for general switch control circuits|
| **Maximum drain-source voltage** | 800V | Suitable for high voltage power supply and load control|
| **Gate voltage range** | ±30V | Suitable for standard gate drive voltage range|
| **Threshold voltage (Vth)** | 3.5V | Suitable for operation within the conventional gate voltage range|
| **On-resistance (RDS(ON))** | 850mΩ @ VGS=10V | Lower on-resistance helps reduce switching losses|
| **Drain current (ID)** | 7A | Suitable for medium power applications, meeting most current requirements|
| **Technology type** | SJ_Multi-EPI | Multi-gate technology optimization, improving switching performance and efficiency|
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Domain and module applications：
3. SSW2N80A-VB Application Fields and Module Examples
1. **High-voltage Power Management and Converters**
SSW2N80A-VB is ideal for high-voltage power management systems, including AC-DC power converters, DC-DC converters, etc. In these systems, the high voltage withstand capability (800V) and relatively low on-resistance (850mΩ) of MOSFET enable it to effectively perform high-voltage switching, optimize power efficiency, and reduce energy loss.
2. **Motor Drive Circuit**
This MOSFET can be used in motor drive applications, especially those that need to operate at high voltages. It can provide smooth and reliable switching control and is widely used in equipment such as industrial machinery, home appliances, and power tools to ensure stable operation and efficient energy conversion of motors.
3. **Switching Power Supply (SMPS)**
In a switching power supply (SMPS) system, SSW2N80A-VB can be used as a switching element for a high-voltage power supply. Its high voltage withstand capability of up to 800V makes it suitable for high-voltage battery-powered systems, power conversion systems, etc., providing stable current flow and efficient power transmission.
4. **Inverter system**
In solar inverters, electric vehicle inverters and other energy conversion systems, SSW2N80A-VB can be used as the main switching element to provide efficient conversion to batteries, grids or other energy systems. It can withstand high voltages while ensuring high operating efficiency with low on-resistance.
5. **Lighting and LED drivers**
This MOSFET is also suitable for lighting control systems, especially in LED drivers that need to control high-voltage loads. Its high voltage tolerance and efficient switching characteristics make it an ideal choice for driving high-power LED lighting systems.
6. **Home appliance power control**
In power modules of home appliances such as TVs, refrigerators, air conditioners, etc., SSW2N80A-VB can be used as a switching element for efficient energy conversion, reducing power waste and extending equipment life.
Through its high voltage withstand capability, relatively low on-resistance and efficient switching capability, the SSW2N80A-VB is ideal for a wide range of high voltage power and power conversion applications, particularly switching power supplies, inverter systems and motor drive modules.
1. **High-voltage Power Management and Converters**
SSW2N80A-VB is ideal for high-voltage power management systems, including AC-DC power converters, DC-DC converters, etc. In these systems, the high voltage withstand capability (800V) and relatively low on-resistance (850mΩ) of MOSFET enable it to effectively perform high-voltage switching, optimize power efficiency, and reduce energy loss.
2. **Motor Drive Circuit**
This MOSFET can be used in motor drive applications, especially those that need to operate at high voltages. It can provide smooth and reliable switching control and is widely used in equipment such as industrial machinery, home appliances, and power tools to ensure stable operation and efficient energy conversion of motors.
3. **Switching Power Supply (SMPS)**
In a switching power supply (SMPS) system, SSW2N80A-VB can be used as a switching element for a high-voltage power supply. Its high voltage withstand capability of up to 800V makes it suitable for high-voltage battery-powered systems, power conversion systems, etc., providing stable current flow and efficient power transmission.
4. **Inverter system**
In solar inverters, electric vehicle inverters and other energy conversion systems, SSW2N80A-VB can be used as the main switching element to provide efficient conversion to batteries, grids or other energy systems. It can withstand high voltages while ensuring high operating efficiency with low on-resistance.
5. **Lighting and LED drivers**
This MOSFET is also suitable for lighting control systems, especially in LED drivers that need to control high-voltage loads. Its high voltage tolerance and efficient switching characteristics make it an ideal choice for driving high-power LED lighting systems.
6. **Home appliance power control**
In power modules of home appliances such as TVs, refrigerators, air conditioners, etc., SSW2N80A-VB can be used as a switching element for efficient energy conversion, reducing power waste and extending equipment life.
Through its high voltage withstand capability, relatively low on-resistance and efficient switching capability, the SSW2N80A-VB is ideal for a wide range of high voltage power and power conversion applications, particularly switching power supplies, inverter systems and motor drive modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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