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SSW20N60S-VB Product details
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SSW20N60S-VB Product Introduction
**SSW20N60S-VB** is a high-performance N-channel power MOSFET in TO247 package for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 600V, and its maximum drain current (ID) is 20A, with good current carrying capacity and low switching loss. This model has an on-resistance (RDS(ON)) of 160mΩ (@VGS = 10V) and adopts **SJ_Multi-EPI** technology, which has excellent conductivity and switching efficiency. SSW20N60S-VB is particularly suitable for a variety of high-efficiency power conversion and power conditioning modules such as power management, switching power supplies (SMPS), DC-DC converters, and motor drives. Its strong current carrying capacity and low loss characteristics make it an ideal choice for industrial power supplies and high-power applications.
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**SSW20N60S-VB** is a high-performance N-channel power MOSFET in TO247 package for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 600V, and its maximum drain current (ID) is 20A, with good current carrying capacity and low switching loss. This model has an on-resistance (RDS(ON)) of 160mΩ (@VGS = 10V) and adopts **SJ_Multi-EPI** technology, which has excellent conductivity and switching efficiency. SSW20N60S-VB is particularly suitable for a variety of high-efficiency power conversion and power conditioning modules such as power management, switching power supplies (SMPS), DC-DC converters, and motor drives. Its strong current carrying capacity and low loss characteristics make it an ideal choice for industrial power supplies and high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
SSW20N60S-VB Parameter Description
| **Parameter** | **Value** | **Description** |
|----------------------|---------------------|--------------------------------------------------------------|
| **Package Type** | TO247 | TO247 package, suitable for high power applications, provides excellent heat dissipation and electrical performance. |
| **Configuration** | Single N-channel | Single N-channel configuration, suitable for high voltage switching and power control applications. |
| **Drain-Source Voltage (VDS)** | 600V | The maximum drain-source voltage is 600V, suitable for medium and high voltage power supply and power conversion applications. |
| **Gate-Source Voltage (VGS)** | ±30V | The maximum gate-source voltage can reach ±30V, which can meet different voltage control requirements. |
| **Turn-On Threshold Voltage (Vth)** | 3.5V | The turn-on threshold voltage is 3.5V, which ensures that the MOSFET turns on quickly at a lower voltage. |
| **On-resistance (RDS(ON))** | 160mΩ @ VGS=10V | At VGS=10V, the on-resistance is 160mΩ, ensuring efficient current transmission and switching operation, reducing energy loss. |
| **Maximum drain current (ID)** | 20A | The maximum drain current is 20A, suitable for applications with medium and high power supply and current requirements. |
| **Technology type** | SJ_Multi-EPI | Adopts SJ_Multi-EPI technology, providing low switching loss and good current carrying capacity. Ensure high efficiency and low power consumption. |
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| **Parameter** | **Value** | **Description** |
|----------------------|---------------------|--------------------------------------------------------------|
| **Package Type** | TO247 | TO247 package, suitable for high power applications, provides excellent heat dissipation and electrical performance. |
| **Configuration** | Single N-channel | Single N-channel configuration, suitable for high voltage switching and power control applications. |
| **Drain-Source Voltage (VDS)** | 600V | The maximum drain-source voltage is 600V, suitable for medium and high voltage power supply and power conversion applications. |
| **Gate-Source Voltage (VGS)** | ±30V | The maximum gate-source voltage can reach ±30V, which can meet different voltage control requirements. |
| **Turn-On Threshold Voltage (Vth)** | 3.5V | The turn-on threshold voltage is 3.5V, which ensures that the MOSFET turns on quickly at a lower voltage. |
| **On-resistance (RDS(ON))** | 160mΩ @ VGS=10V | At VGS=10V, the on-resistance is 160mΩ, ensuring efficient current transmission and switching operation, reducing energy loss. |
| **Maximum drain current (ID)** | 20A | The maximum drain current is 20A, suitable for applications with medium and high power supply and current requirements. |
| **Technology type** | SJ_Multi-EPI | Adopts SJ_Multi-EPI technology, providing low switching loss and good current carrying capacity. Ensure high efficiency and low power consumption. |
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Domain and module applications：
SSW20N60S-VB Application Fields and Modules
#### 1. **Switching Power Supply (SMPS)**
**Application Scenario:** In the switching power supply (SMPS) system, SSW20N60S-VB can be used as a high-efficiency switching element for high-voltage power conversion.
**Features and Advantages:** Its low on-resistance (RDS(ON) = 160mΩ) and high drain current carrying capacity enable it to achieve efficient power conversion in SMPS, especially for applications with high-voltage power supplies and high-power loads.
#### 2. **DC-DC Converter**
**Application Scenario:** In the DC-DC converter, SSW20N60S-VB can be used for power switches to achieve efficient power conversion.
**Features and Advantages:** The low on-resistance and high current carrying capacity of this MOSFET enable it to provide excellent efficiency and reduce switching losses in medium and high voltage DC-DC converters.
#### 3. **Motor drive system**
**Application scenarios:** In motor drive systems, SSW20N60S-VB can be used for power switching and current regulation of motors.
**Features and advantages:** Due to its high drain current (20A) and low loss characteristics, it can provide efficient power control for motor drives and is widely used in various motor control systems.
#### 4. **Power electronic equipment**
**Application scenarios:** In industrial power electronic equipment, SSW20N60S-VB can effectively manage and control power as a switching element.
**Features and advantages:** Its high current carrying capacity and low on-resistance make it an excellent performer in power electronic equipment, capable of carrying large currents and improving the overall efficiency of the system.
#### 5. **Solar panel control system**
**Application scenarios:** In the maximum power point tracking (MPPT) system of solar panels, SSW20N60S-VB is suitable for current regulation and power conversion.
**Features and advantages:** The excellent current carrying capacity and low switching loss of this MOSFET make it very suitable for power switches in solar inverters, effectively improving energy conversion efficiency.
#### 6. **Battery Management System (BMS)**
**Application scenarios:** In the battery management system, SSW20N60S-VB can be used for charging, discharging and battery voltage regulation control.
**Features and advantages:** Its low on-resistance and high current carrying capacity can efficiently regulate current in battery management to ensure battery safety and efficient operation.
#### 7. **Electric Vehicle (EV) Power Drive System**
**Application scenarios:** In the electric drive system of electric vehicles, SSW20N60S-VB can be used for power conversion and motor control modules.
**Features and advantages:** Its high current carrying capacity and efficient switching characteristics make it an ideal choice for electric vehicle power systems, which can improve the performance of electric vehicle power systems.
SSW20N60S-VB is widely used in power management, switching power supply, DC-DC converter, motor drive system, solar panel control system and other fields due to its low on-resistance, high current carrying capacity and SJ_Multi-EPI technology. These advantages make it perform well in multiple high-efficiency power conditioning modules and become an ideal choice for medium and high voltage power supply and high power applications.
#### 1. **Switching Power Supply (SMPS)**
**Application Scenario:** In the switching power supply (SMPS) system, SSW20N60S-VB can be used as a high-efficiency switching element for high-voltage power conversion.
**Features and Advantages:** Its low on-resistance (RDS(ON) = 160mΩ) and high drain current carrying capacity enable it to achieve efficient power conversion in SMPS, especially for applications with high-voltage power supplies and high-power loads.
#### 2. **DC-DC Converter**
**Application Scenario:** In the DC-DC converter, SSW20N60S-VB can be used for power switches to achieve efficient power conversion.
**Features and Advantages:** The low on-resistance and high current carrying capacity of this MOSFET enable it to provide excellent efficiency and reduce switching losses in medium and high voltage DC-DC converters.
#### 3. **Motor drive system**
**Application scenarios:** In motor drive systems, SSW20N60S-VB can be used for power switching and current regulation of motors.
**Features and advantages:** Due to its high drain current (20A) and low loss characteristics, it can provide efficient power control for motor drives and is widely used in various motor control systems.
#### 4. **Power electronic equipment**
**Application scenarios:** In industrial power electronic equipment, SSW20N60S-VB can effectively manage and control power as a switching element.
**Features and advantages:** Its high current carrying capacity and low on-resistance make it an excellent performer in power electronic equipment, capable of carrying large currents and improving the overall efficiency of the system.
#### 5. **Solar panel control system**
**Application scenarios:** In the maximum power point tracking (MPPT) system of solar panels, SSW20N60S-VB is suitable for current regulation and power conversion.
**Features and advantages:** The excellent current carrying capacity and low switching loss of this MOSFET make it very suitable for power switches in solar inverters, effectively improving energy conversion efficiency.
#### 6. **Battery Management System (BMS)**
**Application scenarios:** In the battery management system, SSW20N60S-VB can be used for charging, discharging and battery voltage regulation control.
**Features and advantages:** Its low on-resistance and high current carrying capacity can efficiently regulate current in battery management to ensure battery safety and efficient operation.
#### 7. **Electric Vehicle (EV) Power Drive System**
**Application scenarios:** In the electric drive system of electric vehicles, SSW20N60S-VB can be used for power conversion and motor control modules.
**Features and advantages:** Its high current carrying capacity and efficient switching characteristics make it an ideal choice for electric vehicle power systems, which can improve the performance of electric vehicle power systems.
SSW20N60S-VB is widely used in power management, switching power supply, DC-DC converter, motor drive system, solar panel control system and other fields due to its low on-resistance, high current carrying capacity and SJ_Multi-EPI technology. These advantages make it perform well in multiple high-efficiency power conditioning modules and become an ideal choice for medium and high voltage power supply and high power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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