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SSU50N10-VB Product details
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SSU50N10-VB Product Introduction
**SSU50N10-VB** is a high-performance N-channel power MOSFET in TO263 package, suitable for various high-power applications. Its maximum drain-source voltage (VDS) is 100V, with extremely low on-resistance (RDS(ON) = 20mΩ @ VGS = 10V), capable of providing a maximum drain current (ID) of 70A. This model adopts **Trench** technology, with good thermal management performance and efficient power conversion characteristics. It is suitable for power management, drive systems and power conversion circuits that require high current, high efficiency and low switching loss. The low on-resistance and high current carrying capacity of SSU50N10-VB enable it to perform well in many fields, especially in power supplies, DC-DC converters and motor control modules.
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**SSU50N10-VB** is a high-performance N-channel power MOSFET in TO263 package, suitable for various high-power applications. Its maximum drain-source voltage (VDS) is 100V, with extremely low on-resistance (RDS(ON) = 20mΩ @ VGS = 10V), capable of providing a maximum drain current (ID) of 70A. This model adopts **Trench** technology, with good thermal management performance and efficient power conversion characteristics. It is suitable for power management, drive systems and power conversion circuits that require high current, high efficiency and low switching loss. The low on-resistance and high current carrying capacity of SSU50N10-VB enable it to perform well in many fields, especially in power supplies, DC-DC converters and motor control modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
SSU50N10-VB Parameter Description
| **Parameter** | **Value** | **Description** |
|----------------------|---------------------|--------------------------------------------------------------|
| **Package Type** | TO263 | TO263 package, suitable for medium and high power applications, provides good thermal performance and electrical stability. |
| **Configuration** | Single N-channel | Single N-channel configuration, suitable for high voltage switching and power control applications. |
| **Drain-Source Voltage (VDS)** | 100V | The maximum drain-source voltage is 100V, suitable for medium and low voltage power supply and power conversion applications. |
| **Gate-Source Voltage (VGS)** | ±20V | The maximum gate-source voltage can reach ±20V, adapting to different voltage control requirements. |
| **Turn-On Threshold Voltage (Vth)** | 1.8V | The turn-on threshold voltage is 1.8V, ensuring that the MOSFET turns on quickly at a lower voltage. |
| **On-resistance (RDS(ON))** | 20mΩ @ VGS=10V | At VGS=10V, the on-resistance is 20mΩ, ensuring efficient switching and current transfer, reducing energy loss. |
| **Maximum drain current (ID)** | 70A | The maximum drain current is 70A, suitable for applications with medium and high power supplies and current requirements. |
| **Technology type** | Trench | Using Trench technology, it provides low switching losses and excellent current carrying capacity, ensuring high efficiency and low power consumption. |
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| **Parameter** | **Value** | **Description** |
|----------------------|---------------------|--------------------------------------------------------------|
| **Package Type** | TO263 | TO263 package, suitable for medium and high power applications, provides good thermal performance and electrical stability. |
| **Configuration** | Single N-channel | Single N-channel configuration, suitable for high voltage switching and power control applications. |
| **Drain-Source Voltage (VDS)** | 100V | The maximum drain-source voltage is 100V, suitable for medium and low voltage power supply and power conversion applications. |
| **Gate-Source Voltage (VGS)** | ±20V | The maximum gate-source voltage can reach ±20V, adapting to different voltage control requirements. |
| **Turn-On Threshold Voltage (Vth)** | 1.8V | The turn-on threshold voltage is 1.8V, ensuring that the MOSFET turns on quickly at a lower voltage. |
| **On-resistance (RDS(ON))** | 20mΩ @ VGS=10V | At VGS=10V, the on-resistance is 20mΩ, ensuring efficient switching and current transfer, reducing energy loss. |
| **Maximum drain current (ID)** | 70A | The maximum drain current is 70A, suitable for applications with medium and high power supplies and current requirements. |
| **Technology type** | Trench | Using Trench technology, it provides low switching losses and excellent current carrying capacity, ensuring high efficiency and low power consumption. |
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Domain and module applications：
### SSU50N10-VB Application Fields and Modules
#### 1. **Power Management System**
**Application Scenarios:** SSU50N10-VB can be widely used in various power management systems as a high-efficiency switching element.
**Features and Advantages:** The low on-resistance (RDS(ON) = 20mΩ) and high drain current (ID = 70A) of this MOSFET give it excellent efficiency in power management, especially for power modules that require high current carrying capacity.
#### 2. **DC-DC Converter**
**Application Scenarios:** In DC-DC converters, SSU50N10-VB can be used as a high-efficiency switch for high-power conversion applications.
**Features and Advantages:** Its low on-resistance and low switching losses enable it to maintain high efficiency when operating in DC-DC converters, especially for high-frequency and high-power conversion tasks.
#### 3. **Power tools and battery management systems**
**Application scenarios:** In power tools and battery management systems, SSU50N10-VB can be used for battery charge and discharge control.
**Features and advantages:** The high current carrying capacity and low switching loss of this MOSFET can support the charging and discharging process in the battery management system, ensuring stable operation of the system and extending battery life.
#### 4. **Motor drive system**
**Application scenarios:** Suitable for power regulation modules in motor drive systems, especially medium-power motor drive applications.
**Features and advantages:** SSU50N10-VB provides stable current control and can provide efficient power management during the start-up, operation and speed regulation of the motor.
#### 5. **Automotive electronics**
**Application scenarios:** In automotive electronics, SSU50N10-VB can be used for power conversion modules, battery management systems, and motor control systems.
**Features and advantages:** Due to its high current carrying capacity and low power consumption, this MOSFET is suitable for the power management requirements in automotive electronic systems and provides efficient and stable working performance.
#### 6. **Switching Power Supply (SMPS)**
**Application scenarios:** SSU50N10-VB can improve the efficiency and stability of the system as a switching device in the switching power supply (SMPS).
**Features and advantages:** Its low on-resistance and high drain current carrying capacity make it suitable for various medium-power switching power supplies, such as power adapters, AC-DC power modules, etc.
#### 7. **LED Drive Circuit**
**Application scenarios:** In the LED drive circuit, SSU50N10-VB can be used for power conversion and regulation.
**Features and advantages:** The low switching loss and high efficiency make it an ideal choice in the LED drive circuit, which helps to improve the working efficiency of the drive circuit and extend the service life of the lamp.
The low on-resistance, high current carrying capacity and Trench technology of SSU50N10-VB make it widely used in many fields, especially in power management, DC-DC conversion, power tools, automotive electronics, motor drive and other high-efficiency power control and power regulation modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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