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SSU2N60B-VB Product details
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Product Introduction
**SSU2N60B-VB** is a single N-channel MOSFET in TO251 package, suitable for high voltage power management and switch control applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, and the gate-source voltage (VGS) range is ±30V. It can withstand higher voltages and is suitable for high voltage power systems. Its threshold voltage (Vth) is 3.5V, and it can turn on quickly at a lower gate voltage, with good switching characteristics. The on-resistance (RDS(ON)) is 4300mΩ@VGS=10V, which is suitable for lower current applications. The maximum drain current (ID) is 2A, which is suitable for small and medium power power management and switching applications. Using traditional Plannar technology, the SSU2N60B-VB has stable switching characteristics and can meet the needs of efficient current control and low loss.
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**SSU2N60B-VB** is a single N-channel MOSFET in TO251 package, suitable for high voltage power management and switch control applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, and the gate-source voltage (VGS) range is ±30V. It can withstand higher voltages and is suitable for high voltage power systems. Its threshold voltage (Vth) is 3.5V, and it can turn on quickly at a lower gate voltage, with good switching characteristics. The on-resistance (RDS(ON)) is 4300mΩ@VGS=10V, which is suitable for lower current applications. The maximum drain current (ID) is 2A, which is suitable for small and medium power power management and switching applications. Using traditional Plannar technology, the SSU2N60B-VB has stable switching characteristics and can meet the needs of efficient current control and low loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Parameter Description
| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|--------------------------------------------------------------|
| **Package Type** | TO251 | TO251 package is suitable for small and medium power applications with limited space and stable performance. |
| **Configuration** | Single N-channel | Single N-channel MOSFET, suitable for forward current control and switch control applications. |
| **Drain-Source Voltage (VDS)** | 650V | The maximum drain-source voltage is 650V, suitable for medium and high voltage power management and switch control. |
| **Gate-Source Voltage (VGS)** | ±30V | The gate-source voltage range is ±30V, suitable for a variety of drive circuits, ensuring stable control. |
| **Threshold Voltage (Vth)** | 3.5V | The threshold voltage is 3.5V, with a lower switch start voltage, suitable for low voltage drive circuits. |
| **On-resistance (RDS(ON))** | 4300mΩ (@VGS=10V) | At VGS=10V, the on-resistance is 4300mΩ, suitable for low-power applications and provides stable current control. |
| **Drain current (ID)** | 2A | The maximum drain current is 2A, suitable for small and medium power requirements, with stable current carrying capacity. |
| **Technology** | Plannar | Plannar technology is used to ensure the reliability and stability of MOSFET, suitable for a variety of conventional applications. |
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| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|--------------------------------------------------------------|
| **Package Type** | TO251 | TO251 package is suitable for small and medium power applications with limited space and stable performance. |
| **Configuration** | Single N-channel | Single N-channel MOSFET, suitable for forward current control and switch control applications. |
| **Drain-Source Voltage (VDS)** | 650V | The maximum drain-source voltage is 650V, suitable for medium and high voltage power management and switch control. |
| **Gate-Source Voltage (VGS)** | ±30V | The gate-source voltage range is ±30V, suitable for a variety of drive circuits, ensuring stable control. |
| **Threshold Voltage (Vth)** | 3.5V | The threshold voltage is 3.5V, with a lower switch start voltage, suitable for low voltage drive circuits. |
| **On-resistance (RDS(ON))** | 4300mΩ (@VGS=10V) | At VGS=10V, the on-resistance is 4300mΩ, suitable for low-power applications and provides stable current control. |
| **Drain current (ID)** | 2A | The maximum drain current is 2A, suitable for small and medium power requirements, with stable current carrying capacity. |
| **Technology** | Plannar | Plannar technology is used to ensure the reliability and stability of MOSFET, suitable for a variety of conventional applications. |
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Domain and module applications：
Application fields and module examples
1. **Power Management**
SSU2N60B-VB is suitable for power management systems, especially low-power power supply and control modules. Due to its low on-resistance and high voltage tolerance, it is widely used in various small and medium power modules, such as DC-DC converters and AC-DC adapters.
2. **Switching Power Supplies**
In switching power supplies (SMPS), SSU2N60B-VB can be used as a power switching element to provide efficient power conversion. It has good conduction characteristics and moderate drain-source voltage, which is very suitable for the design of medium and low power switching power supplies, such as power modules for power tools and household appliances.
3. **Low-Power LED Drivers**
In LED driver power supplies, the low on-resistance characteristics of SSU2N60B-VB help improve energy efficiency and reduce energy loss. It is very suitable for driving low-power LED lamps, such as energy-saving lamps, home lighting and some dimmable LED applications.
4. **Battery Management Systems**
This MOSFET can be used in battery management systems, especially for battery charge and discharge control. In battery protection circuits and battery chargers, SSU2N60B-VB can efficiently manage the flow of current to ensure safe and reliable charging and discharging of batteries.
5. **Home Appliance Power Supplies**
SSU2N60B-VB is widely used in home appliance power modules, especially the power management part of home appliances such as air conditioners, refrigerators, washing machines, etc. It can work stably in a high voltage environment and provide efficient current control and switch switching for home appliance power supplies.
6. **Automation Equipment**
In industrial automation and control systems, SSU2N60B-VB can provide stable switching control under high voltage environment, and is suitable for current control and switching operation in systems such as drive motors, actuators, sensors, etc.
7. **Chargers and Adapters**
This MOSFET is suitable for various chargers and power adapters, especially for small and medium power applications. Due to its stable voltage and current control capabilities, it is suitable for providing power for smartphones, laptops and other portable devices.
8. **High-Efficiency Power Conversion Modules**
SSU2N60B-VB can be used in high-efficiency power conversion modules, such as DC-DC converters, inverters and other equipment, to help improve energy efficiency and reduce system heat loss, especially for applications with lower power and medium voltage requirements.
With its high drain-source voltage of 650V, low on-resistance and medium drain current capability, SSU2N60B-VB is suitable for many power management and switching applications that require stable current control and high efficiency, especially in medium and low power power modules, home appliances, LED drivers and battery management.
1. **Power Management**
SSU2N60B-VB is suitable for power management systems, especially low-power power supply and control modules. Due to its low on-resistance and high voltage tolerance, it is widely used in various small and medium power modules, such as DC-DC converters and AC-DC adapters.
2. **Switching Power Supplies**
In switching power supplies (SMPS), SSU2N60B-VB can be used as a power switching element to provide efficient power conversion. It has good conduction characteristics and moderate drain-source voltage, which is very suitable for the design of medium and low power switching power supplies, such as power modules for power tools and household appliances.
3. **Low-Power LED Drivers**
In LED driver power supplies, the low on-resistance characteristics of SSU2N60B-VB help improve energy efficiency and reduce energy loss. It is very suitable for driving low-power LED lamps, such as energy-saving lamps, home lighting and some dimmable LED applications.
4. **Battery Management Systems**
This MOSFET can be used in battery management systems, especially for battery charge and discharge control. In battery protection circuits and battery chargers, SSU2N60B-VB can efficiently manage the flow of current to ensure safe and reliable charging and discharging of batteries.
5. **Home Appliance Power Supplies**
SSU2N60B-VB is widely used in home appliance power modules, especially the power management part of home appliances such as air conditioners, refrigerators, washing machines, etc. It can work stably in a high voltage environment and provide efficient current control and switch switching for home appliance power supplies.
6. **Automation Equipment**
In industrial automation and control systems, SSU2N60B-VB can provide stable switching control under high voltage environment, and is suitable for current control and switching operation in systems such as drive motors, actuators, sensors, etc.
7. **Chargers and Adapters**
This MOSFET is suitable for various chargers and power adapters, especially for small and medium power applications. Due to its stable voltage and current control capabilities, it is suitable for providing power for smartphones, laptops and other portable devices.
8. **High-Efficiency Power Conversion Modules**
SSU2N60B-VB can be used in high-efficiency power conversion modules, such as DC-DC converters, inverters and other equipment, to help improve energy efficiency and reduce system heat loss, especially for applications with lower power and medium voltage requirements.
With its high drain-source voltage of 650V, low on-resistance and medium drain current capability, SSU2N60B-VB is suitable for many power management and switching applications that require stable current control and high efficiency, especially in medium and low power power modules, home appliances, LED drivers and battery management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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