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SST70R1K1S-VB Product details
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Product Introduction
**SST70R1K1S-VB** is a single N-channel MOSFET in TO252 package with excellent switching performance, suitable for various power management and switch control applications. The maximum drain-source voltage (VDS) of this MOSFET is 700V, and the gate-source voltage (VGS) range is ±30V. It can withstand higher voltages and is suitable for high-voltage power systems. Its threshold voltage (Vth) is 3.5V, which can quickly start at a lower gate-source voltage and has good low-voltage drive performance. The on-resistance (RDS(ON)) is 1000mΩ@VGS=10V, which ensures switching efficiency and reduces conduction losses. The maximum drain current (ID) is 5A, which is suitable for medium-power applications and can provide stable current control. Using SJ_Multi-EPI technology, this MOSFET has lower on-resistance and higher current carrying capacity, which is very suitable for high-efficiency power modules.
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**SST70R1K1S-VB** is a single N-channel MOSFET in TO252 package with excellent switching performance, suitable for various power management and switch control applications. The maximum drain-source voltage (VDS) of this MOSFET is 700V, and the gate-source voltage (VGS) range is ±30V. It can withstand higher voltages and is suitable for high-voltage power systems. Its threshold voltage (Vth) is 3.5V, which can quickly start at a lower gate-source voltage and has good low-voltage drive performance. The on-resistance (RDS(ON)) is 1000mΩ@VGS=10V, which ensures switching efficiency and reduces conduction losses. The maximum drain current (ID) is 5A, which is suitable for medium-power applications and can provide stable current control. Using SJ_Multi-EPI technology, this MOSFET has lower on-resistance and higher current carrying capacity, which is very suitable for high-efficiency power modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter Description
| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|--------------------------------------------------------------|
| **Package Type** | TO252 | The TO252 package offers a compact size for applications with limited space and requiring higher current. |
| **Configuration** | Single N-channel | Single N-channel MOSFET for forward current control and high current power management applications. |
| **Drain-Source Voltage (VDS)** | 700V | The maximum drain-source voltage is 700V, which is suitable for applications in high voltage environments to ensure stable current control. |
| **Gate-Source Voltage (VGS)** | ±30V | A wide gate-source voltage range accommodates a variety of circuit designs and driving requirements. |
| **Threshold Voltage (Vth)** | 3.5V | The threshold voltage is 3.5V, which ensures that the MOSFET can be turned on at a lower gate voltage to improve switching efficiency. |
| **On-resistance (RDS(ON))** | 1000mΩ (@VGS=10V) | At VGS=10V, the on-resistance is 1000mΩ, suitable for medium power requirements and provides good current conduction characteristics. |
| **Drain current (ID)** | 5A | Maximum drain current is 5A, suitable for medium power power management and switching applications. |
| **Technology** | SJ_Multi-EPI | Using SJ_Multi-EPI technology, it has lower on-resistance and higher efficiency, suitable for high-performance applications. |
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| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|--------------------------------------------------------------|
| **Package Type** | TO252 | The TO252 package offers a compact size for applications with limited space and requiring higher current. |
| **Configuration** | Single N-channel | Single N-channel MOSFET for forward current control and high current power management applications. |
| **Drain-Source Voltage (VDS)** | 700V | The maximum drain-source voltage is 700V, which is suitable for applications in high voltage environments to ensure stable current control. |
| **Gate-Source Voltage (VGS)** | ±30V | A wide gate-source voltage range accommodates a variety of circuit designs and driving requirements. |
| **Threshold Voltage (Vth)** | 3.5V | The threshold voltage is 3.5V, which ensures that the MOSFET can be turned on at a lower gate voltage to improve switching efficiency. |
| **On-resistance (RDS(ON))** | 1000mΩ (@VGS=10V) | At VGS=10V, the on-resistance is 1000mΩ, suitable for medium power requirements and provides good current conduction characteristics. |
| **Drain current (ID)** | 5A | Maximum drain current is 5A, suitable for medium power power management and switching applications. |
| **Technology** | SJ_Multi-EPI | Using SJ_Multi-EPI technology, it has lower on-resistance and higher efficiency, suitable for high-performance applications. |
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Domain and module applications：
Application fields and module examples
1. **Power Management**
SST70R1K1S-VB is widely used in power management systems, especially in applications that require high voltage and high efficiency. Its low on-resistance and high current carrying capacity make it very suitable for use in power management systems such as DC-DC converters and AC-DC power conversion modules, effectively improving the energy efficiency and reliability of the system.
2. **Switching Power Supplies**
In a switching power supply (SMPS), SST70R1K1S-VB can be used as a power switching element, especially for high voltage applications (such as industrial power supplies, home appliance power supplies, etc.). Its low on-resistance during the switching process helps reduce switching losses and improve overall efficiency.
3. **Battery Management Systems**
SST70R1K1S-VB is also suitable for battery management systems, especially in applications that require high voltage protection. Its low on-resistance reduces power loss and ensures efficient battery charging and discharging, making it suitable for battery chargers, battery protection circuits and other systems.
4. **Home Appliance Power Supplies**
SST70R1K1S-VB can be widely used in power modules for home appliances, such as air conditioners, washing machines and refrigerators. It can withstand high voltages, ensuring that the power system can still work stably under high voltage fluctuations, while improving the efficiency of power conversion.
5. **LED Driver Power Supplies**
In LED driver power supplies, SST70R1K1S-VB can provide stable current control, reduce heat loss in the power supply, and improve the operating efficiency of LEDs. It is especially suitable for high-brightness LED lamps and lighting systems.
6. **Automotive Electronics**
This MOSFET can also be used in automotive electronic systems, such as electric power steering (EPS) systems, electric seat adjustments, and other on-board power management modules. Its high voltage capability and low on-resistance make it suitable for power switching and protection functions in automotive power systems.
7. **Industrial Power Supplies**
SST70R1K1S-VB can be used in industrial control systems, motor drive systems and other fields. In these systems, MOSFET can provide stable power switching and high current carrying capacity, improving system reliability and efficiency.
Through its excellent current control capability, low on-resistance and ability to withstand high voltage, SST70R1K1S-VB provides efficient and stable solutions in many fields, especially in power management, switching power supply, LED drive, battery management and other applications.
1. **Power Management**
SST70R1K1S-VB is widely used in power management systems, especially in applications that require high voltage and high efficiency. Its low on-resistance and high current carrying capacity make it very suitable for use in power management systems such as DC-DC converters and AC-DC power conversion modules, effectively improving the energy efficiency and reliability of the system.
2. **Switching Power Supplies**
In a switching power supply (SMPS), SST70R1K1S-VB can be used as a power switching element, especially for high voltage applications (such as industrial power supplies, home appliance power supplies, etc.). Its low on-resistance during the switching process helps reduce switching losses and improve overall efficiency.
3. **Battery Management Systems**
SST70R1K1S-VB is also suitable for battery management systems, especially in applications that require high voltage protection. Its low on-resistance reduces power loss and ensures efficient battery charging and discharging, making it suitable for battery chargers, battery protection circuits and other systems.
4. **Home Appliance Power Supplies**
SST70R1K1S-VB can be widely used in power modules for home appliances, such as air conditioners, washing machines and refrigerators. It can withstand high voltages, ensuring that the power system can still work stably under high voltage fluctuations, while improving the efficiency of power conversion.
5. **LED Driver Power Supplies**
In LED driver power supplies, SST70R1K1S-VB can provide stable current control, reduce heat loss in the power supply, and improve the operating efficiency of LEDs. It is especially suitable for high-brightness LED lamps and lighting systems.
6. **Automotive Electronics**
This MOSFET can also be used in automotive electronic systems, such as electric power steering (EPS) systems, electric seat adjustments, and other on-board power management modules. Its high voltage capability and low on-resistance make it suitable for power switching and protection functions in automotive power systems.
7. **Industrial Power Supplies**
SST70R1K1S-VB can be used in industrial control systems, motor drive systems and other fields. In these systems, MOSFET can provide stable power switching and high current carrying capacity, improving system reliability and efficiency.
Through its excellent current control capability, low on-resistance and ability to withstand high voltage, SST70R1K1S-VB provides efficient and stable solutions in many fields, especially in power management, switching power supply, LED drive, battery management and other applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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