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SST60R2K3S-VB Product details
Back to previous pageProduct introduction：
1. SST60R2K3S-VB Product Introduction
SST60R2K3S-VB is a single N-channel MOSFET in TO252 package, suitable for high voltage switching and power management applications. Its maximum drain-source voltage is 600V, which can work stably in high voltage power supply systems. The gate voltage of this MOSFET can reach up to ±30V, with a high gate drive voltage range. Its on-resistance (RDS(ON)) is 2300mΩ, which performs well at VGS=10V, providing lower power consumption and higher efficiency. SST60R2K3S-VB adopts SJ_Multi-EPI technology, which can achieve lower switching losses and improve reliability, and is suitable for applications requiring high voltage resistance and high efficiency. The maximum drain current of this MOSFET is 2A, which is suitable for medium and low power power supplies, switching power supplies (SMPS) and inverters.
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SST60R2K3S-VB is a single N-channel MOSFET in TO252 package, suitable for high voltage switching and power management applications. Its maximum drain-source voltage is 600V, which can work stably in high voltage power supply systems. The gate voltage of this MOSFET can reach up to ±30V, with a high gate drive voltage range. Its on-resistance (RDS(ON)) is 2300mΩ, which performs well at VGS=10V, providing lower power consumption and higher efficiency. SST60R2K3S-VB adopts SJ_Multi-EPI technology, which can achieve lower switching losses and improve reliability, and is suitable for applications requiring high voltage resistance and high efficiency. The maximum drain current of this MOSFET is 2A, which is suitable for medium and low power power supplies, switching power supplies (SMPS) and inverters.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 2A | 2300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. SST60R2K3S-VB Detailed Parameter Description
| **Parameter Category** | **Parameter Value** | **Description** |
|-----------------------|--------------------------------------------|------------------------------------------|
| **Package Type** | TO252 | Small package, suitable for compact design and space-limited applications|
| **Channel Configuration** | Single-N-Channel | Suitable for high voltage and high current applications|
| **Maximum Drain-Source Voltage** | 600V | Suitable for high voltage power supply system|
| **Gate Voltage Range** | ±30V | Supports standard gate drive voltage range|
| **Threshold Voltage (Vth)** | 3.5V | Suitable switching threshold voltage|
| **On-resistance (RDS(ON))** | 2300mΩ @ VGS=10V | Provides lower switching loss and improves efficiency|
| **Drain Current (ID)** | 2A | Suitable for low to medium power supply applications|
| **Technology Type** | SJ_Multi-EPI | Provides the most efficient switching characteristics|
| **Operating Temperature Range** | -55°C to +150°C | Suitable for various ambient temperature conditions|
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| **Parameter Category** | **Parameter Value** | **Description** |
|-----------------------|--------------------------------------------|------------------------------------------|
| **Package Type** | TO252 | Small package, suitable for compact design and space-limited applications|
| **Channel Configuration** | Single-N-Channel | Suitable for high voltage and high current applications|
| **Maximum Drain-Source Voltage** | 600V | Suitable for high voltage power supply system|
| **Gate Voltage Range** | ±30V | Supports standard gate drive voltage range|
| **Threshold Voltage (Vth)** | 3.5V | Suitable switching threshold voltage|
| **On-resistance (RDS(ON))** | 2300mΩ @ VGS=10V | Provides lower switching loss and improves efficiency|
| **Drain Current (ID)** | 2A | Suitable for low to medium power supply applications|
| **Technology Type** | SJ_Multi-EPI | Provides the most efficient switching characteristics|
| **Operating Temperature Range** | -55°C to +150°C | Suitable for various ambient temperature conditions|
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Domain and module applications：
3. SST60R2K3S-VB application areas and module examples
1. **Switching Power Supply (SMPS)**
SST60R2K3S-VB is suitable for various switching power supply (SMPS) applications, especially in power supply systems that require higher voltage resistance and stable working conditions. Its maximum drain-source voltage is 600V, making it suitable for AC-DC conversion, power adapters, DC-DC conversion and other equipment to provide efficient power conversion.
2. **Inverter Application**
In the inverter, SST60R2K3S-VB can be used as a switching element, especially in solar inverters, wind inverters, and uninterruptible power supply (UPS) systems. Due to its high voltage resistance and low on-resistance, it can improve the conversion efficiency and system stability of the inverter.
3. **Motor drive system**
This MOSFET can be applied to motor control and drive circuits, especially in medium-power power tools, household appliances and other applications. Due to its low on-resistance characteristics, it helps to reduce energy loss and improve the efficiency of the system.
4. **LED drive**
SST60R2K3S-VB is suitable for LED driver power supplies, especially in applications requiring high efficiency and low power loss. Its excellent switching characteristics and high withstand voltage capability enable it to stably drive LED lighting equipment and improve system reliability.
5. **Consumer electronic devices**
In various consumer electronic devices, SST60R2K3S-VB can be used as power management and switching elements, and is widely used in battery management systems, power adapters, etc. for portable electronic products. Its high withstand voltage and high-efficiency switching characteristics make it an ideal choice for battery-powered devices and other electronic devices.
6. **Power Module and Battery Management System**
This MOSFET can be used in a battery management system (BMS) to control and protect the charging and discharging process of the battery pack, ensuring safe and stable operation of the battery in a high-voltage environment. At the same time, its high withstand voltage and low on-resistance characteristics can be used to improve the efficiency and reliability of the overall system.
Through these applications, SST60R2K3S-VB provides an efficient and reliable solution for a variety of high-voltage power control, switching and drive systems, especially in the fields of switching power supplies, inverters, motor drives, LED drives, etc.
1. **Switching Power Supply (SMPS)**
SST60R2K3S-VB is suitable for various switching power supply (SMPS) applications, especially in power supply systems that require higher voltage resistance and stable working conditions. Its maximum drain-source voltage is 600V, making it suitable for AC-DC conversion, power adapters, DC-DC conversion and other equipment to provide efficient power conversion.
2. **Inverter Application**
In the inverter, SST60R2K3S-VB can be used as a switching element, especially in solar inverters, wind inverters, and uninterruptible power supply (UPS) systems. Due to its high voltage resistance and low on-resistance, it can improve the conversion efficiency and system stability of the inverter.
3. **Motor drive system**
This MOSFET can be applied to motor control and drive circuits, especially in medium-power power tools, household appliances and other applications. Due to its low on-resistance characteristics, it helps to reduce energy loss and improve the efficiency of the system.
4. **LED drive**
SST60R2K3S-VB is suitable for LED driver power supplies, especially in applications requiring high efficiency and low power loss. Its excellent switching characteristics and high withstand voltage capability enable it to stably drive LED lighting equipment and improve system reliability.
5. **Consumer electronic devices**
In various consumer electronic devices, SST60R2K3S-VB can be used as power management and switching elements, and is widely used in battery management systems, power adapters, etc. for portable electronic products. Its high withstand voltage and high-efficiency switching characteristics make it an ideal choice for battery-powered devices and other electronic devices.
6. **Power Module and Battery Management System**
This MOSFET can be used in a battery management system (BMS) to control and protect the charging and discharging process of the battery pack, ensuring safe and stable operation of the battery in a high-voltage environment. At the same time, its high withstand voltage and low on-resistance characteristics can be used to improve the efficiency and reliability of the overall system.
Through these applications, SST60R2K3S-VB provides an efficient and reliable solution for a variety of high-voltage power control, switching and drive systems, especially in the fields of switching power supplies, inverters, motor drives, LED drives, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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