SST2623-VB Product details
Product introduction:
**SST2623-VB** is a single-channel P-type MOSFET in SOT23-6 package, designed for low-voltage, high-efficiency applications. Its maximum drain-source voltage (VDS) is -30V, and the gate-source voltage (VGS) can reach ±20V, which is suitable for small power supplies and switching circuits. The threshold voltage (Vth) of the device is -1.7V, which can work stably at a lower voltage and is suitable for various low-voltage drive applications. Its on-resistance (RDS(ON)) is 54mΩ (@VGS=4.5V) and 49mΩ (@VGS=10V), which effectively reduces power loss and improves switching efficiency. This MOSFET can withstand a maximum drain current (ID) of -4.8A and is widely used in applications such as mobile devices, portable power management, and low-power switching power supplies.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
| **Parameter** | **Value** | **Unit** | **Description** |
|---------------------|---------------------|----------------|-------------------------------------|
| **Package type** | SOT23-6 | - | Small package, suitable for circuit design with limited space|
| **Configuration** | Single channel P type| - | Suitable for low-side switch control, widely used in various low-power power supplies and battery management systems|
| **Maximum drain-source voltage (VDS)** | -30V | V | Suitable for medium and low voltage power supply control, providing better current control and protection functions|
| **Maximum gate-source voltage (VGS)** | ±20V | V | Compatible with common drive circuits, providing higher gate voltage tolerance|
| **Threshold voltage (Vth)** | -1.7V | V | Ensure switching stability at lower voltages|
| **On-resistance (RDS(ON))** | 54mΩ (@VGS=4.5V) | mΩ | Lower on-resistance, can reduce switching losses and improve efficiency|
| **On-resistance (RDS(ON))** | 49mΩ (@VGS=10V) | mΩ | Improve current transfer efficiency, suitable for higher gate-source voltage environment|
| **Maximum drain current (ID)** | -4.8A | A | Suitable for low and medium power applications, can withstand large drain current|
| **Technology type** | Trench | - | Trench technology, providing lower on-resistance and excellent switching performance|
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Domain and module applications:
1. **Battery Management System (BMS)**
**SST2623-VB** is suitable for battery management systems (BMS), especially for the protection and monitoring of lithium battery packs. Its low on-resistance and stable switching performance enable it to efficiently control the current flow during battery charging and discharging, and prevent overcurrent and overvoltage problems, providing system stability and safety.
2. **Low-power switching power supply (SMPS)**
In low-power switching power supplies, **SST2623-VB** is able to provide efficient switching performance and is suitable for battery-powered devices and portable power modules. Its small package and low on-resistance make it an ideal choice for high-efficiency, low-power power supply designs. This MOSFET can ensure reduced losses and improved conversion efficiency during power switching.
3. **Portable Electronic Devices**
In portable electronic devices such as smartphones, tablets, and portable audio, **SST2623-VB** can be used as a switching element for battery-powered power management. Due to its efficient switching performance and low on-resistance, this MOSFET can effectively extend the service life of the equipment and improve the overall performance.
4. **DC Motor Drive**
**SST2623-VB** can be applied to DC motor drive circuits, especially for the control of small power motors. As a low-side switch, it can stably control the current to ensure smooth starting, running and stopping of the motor. This makes it very useful in applications such as home appliances, power tools and automation equipment.
5. **LED Drive Circuit**
In the LED drive circuit, **SST2623-VB** can be used as a switching element to provide stable current control. Through its low on-resistance and efficient switching performance, it can effectively reduce power loss and improve the energy efficiency of LED lamps, ensuring long life and high brightness output of LED lamps.
6. **Load Switch Control**
**SST2623-VB** can also be applied to various load switch control systems, especially in circuits that require low power consumption. It can quickly switch loads, reduce power consumption and improve system efficiency, and is widely used in consumer electronics, industrial control and communication equipment.
In summary, **SST2623-VB** is a P-type MOSFET suitable for low-power switching power supplies, battery management, DC motor drive, LED drive and load switch control. Its low on-resistance, efficient switching performance and compact package make it perform well in applications with limited space and high energy efficiency requirements.
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