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SST07N60S-VB Product details

Product introduction:

Product Introduction

**SST07N60S-VB** is a single N-channel MOSFET in TO252 package, suitable for high voltage and medium current switching applications. Its maximum drain-source voltage (VDS) is 600V, which can withstand higher voltage application environments. The gate-source voltage (VGS) is ±30V, which ensures a wide gate drive voltage range and can meet various control requirements. The threshold voltage (Vth) of this MOSFET is 3.5V, which is suitable for standard switching operation. Its on-resistance (RDS(ON)) is 650mΩ@VGS=10V, which effectively reduces switching losses and ensures high-efficiency current transmission. The maximum drain current (ID) is 7A, which is suitable for medium power application scenarios. SST07N60S-VB adopts SJ_Multi-EPI technology, providing lower on-resistance and higher reliability, especially for power control systems requiring high voltage operation and medium current transmission.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 600V 3.5V 7A 650mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 600V 3.5V 7A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 600V 3.5V 7A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Parameter Description

| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|--------------------------------------------------------------|
| **Package Type** | TO252 | TO252 package, suitable for high voltage applications, with good heat dissipation performance. |
| **Configuration** | Single N-channel | Single N-channel configuration, providing excellent switching performance and efficient current control. |
| **Drain-Source Voltage (VDS)** | 600V | The maximum drain-source voltage is 600V, suitable for switching circuits that need to withstand high voltage. |
| **Gate-Source Voltage (VGS)** | ±30V | Allows a wide range of gate-source voltage drive, suitable for circuits with different drive voltage requirements. |
| **Threshold Voltage (Vth)** | 3.5V | The threshold voltage is moderate, ensuring that the device switches stably under normal gate-source voltage. |
| **On-resistance (RDS(ON))** | 650mΩ (@VGS=10V) | Relatively low on-resistance, providing efficient current transfer and reducing switching losses. |
| **Drain current (ID)** | 7A | Maximum drain current is 7A, suitable for medium power applications. |
| **Technology** | SJ_Multi-EPI | SJ_Multi-EPI technology provides lower on-resistance and higher reliability for high voltage applications. |

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Domain and module applications:

Application fields and module examples

1. **Switching Power Supplies**
SST07N60S-VB is suitable for various switching power supply systems, especially the 600V voltage tolerance enables it to be widely used in high-voltage switching power supplies (SMPS). The low on-resistance and high drain current carrying capacity of this MOSFET enable it to have excellent performance in power conversion efficiency, and is suitable for efficient AC-DC and DC-DC converters.

2. **Inverters**
SST07N60S-VB can provide excellent current control in inverter applications, especially for high-voltage solar inverters, UPS inverters and other power conversion systems. Its 600V withstand voltage capability enables it to withstand higher voltages, suitable for high-power power conversion and battery management systems, ensuring the stability and efficiency of the system.

3. **Motor Drivers**
In motor drive applications, SST07N60S-VB is suitable for various medium-power motor control, such as small power tools, electric vehicle drive systems, etc. Its efficient switching characteristics and moderate drain current carrying capacity can provide stable drive current to ensure smooth operation of the motor.

4. **Battery Management Systems**
This MOSFET is widely used in battery management systems, especially for high-power battery management and regulation of charging/discharging processes. SST07N60S-VB can provide efficient current transmission, reduce losses and improve charging efficiency, and has broad application prospects in electric vehicles, portable battery packs and other fields.

5. **Power Conversion and Power Factor Correction (PFC)**
SST07N60S-VB is suitable for power factor correction (PFC) circuits that require high voltage and high efficiency. Due to its low RDS(ON) and 600V withstand voltage capability, it can effectively control the power input current, improve the power factor and reduce the harmonics of the power system. In various power electronic devices, it provides stable performance and ensures efficient power conversion.

6. **Home Appliances**
SST07N60S-VB is also widely used in home appliance power modules, especially home appliances with high voltage requirements, such as air conditioners, electric water heaters, washing machines, etc. This MOSFET can provide stable power control for these devices, ensuring that home appliances operate in an efficient and safe state.

7. **Industrial Equipment**
In industrial automation and other high voltage control applications, SST07N60S-VB provides reliable switching operation and is suitable for various power control and power conversion modules, such as power tools, industrial motor control, and power modules for equipment.

Through the above applications, SST07N60S-VB MOSFET has demonstrated its efficient and reliable performance in multiple high-voltage and medium-current power management and control fields, and is particularly suitable for use in switching power supplies, motor drives, inverters, battery management and other modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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