SSS5N80C-VB Product details
Product introduction:
**SSS5N80C-VB** is a high-voltage N-channel power MOSFET in TO220F package with good thermal management performance, suitable for various high-voltage applications. The drain-source voltage (VDS) of this MOSFET can reach up to 800V, which is suitable for medium and high voltage power supply control, power conversion and power regulation systems. Its gate-source voltage (VGS) is ±30V, with a low turn-on threshold voltage (Vth) of 3.5V, ensuring good switching characteristics. The on-resistance (RDS(ON)) of this model is 1100mΩ at VGS=10V, and the maximum drain current (ID) is 5A, which is suitable for high-efficiency and high-voltage switching power supplies, industrial equipment, and power electronic systems. Using **SJ_Multi-EPI** technology, it can provide better switching speed and lower switching losses.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
| **Parameter** | **Value** | **Description** |
|----------------------|---------------------|--------------------------------------------------------------|
| **Package Type** | TO220F | The TO220F package provides good heat dissipation and is suitable for higher power applications. |
| **Configuration** | Single N-channel | Single N-channel configuration, suitable for power switches, converters and power management circuits. |
| **Drain-Source Voltage (VDS)** | 800V | The maximum drain-source voltage is 800V, suitable for medium and high voltage power management and power conversion. |
| **Gate-Source Voltage (VGS)** | ±30V | Provides a gate-source voltage range of ±30V to adapt to a variety of control circuit designs. |
| **Turn-On Threshold Voltage (Vth)** | 3.5V | The turn-on threshold voltage is 3.5V to ensure stable switching operation. |
| **On-resistance (RDS(ON))** | 1100mΩ @ VGS=10V | When VGS=10V, the on-resistance is 1100mΩ, suitable for low current and high efficiency control. |
| **Maximum drain current (ID)** | 5A | The maximum drain current is 5A, suitable for low power switching power supplies and control circuits. |
| **Technology type** | SJ_Multi-EPI | Using SJ_Multi-EPI technology, it provides lower switching losses and higher switching speeds. |
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Domain and module applications:
#### 1. **Switching Power Supply (SMPS)**
**Application Scenario:** SSS5N80C-VB can be used as the main switching device in a high-voltage switching power supply (SMPS), responsible for efficient conversion of electrical energy.
**Features and Advantages:** Its 800V drain-source voltage capability enables it to cope with higher input voltages, making it suitable for converters, adapters, and power modules, providing higher efficiency and stability.
#### 2. **Industrial Power Management System**
**Application Scenario:** In industrial power management systems, SSS5N80C-VB can be used in power regulation and conversion systems to ensure a smooth supply of current and voltage.
**Features and Advantages:** This MOSFET provides a withstand voltage of up to 800V, which is suitable for power systems with high-voltage loads, and can provide reliable power management in industrial automation, motor control, and other occasions.
#### 3. **Power Factor Correction (PFC) Circuit**
**Application Scenarios:** SSS5N80C-VB can be widely used in power factor correction (PFC) circuits to help improve power efficiency.
**Features and Advantages:** In the PFC circuit, the low on-resistance and high switching speed of SSS5N80C-VB enable it to effectively improve the power factor of the power supply and reduce energy loss.
#### 4. **Photovoltaic Inverter**
**Application Scenarios:** In solar photovoltaic inverters, SSS5N80C-VB is used as a power switching device to convert DC to AC.
**Features and Advantages:** The drain-source voltage of up to 800V supports high voltage operation in solar inverters, which can efficiently convert and optimize energy utilization.
#### 5. **Electric vehicle charger**
**Application scenarios:** The SSS5N80C-VB is suitable for electric vehicle (EV) chargers as an efficient power switching element.
**Features and advantages:** In electric vehicle charger applications, the high withstand voltage and low on-resistance characteristics provided by this MOSFET can improve charging efficiency while reducing heat generation and extending the life of the charger.
#### 6. **High-voltage motor drive system**
**Application scenarios:** In high-voltage motor drive systems, the SSS5N80C-VB can be used as a switching element to control the power supply and operating status of the motor.
**Features and advantages:** Its high voltage tolerance enables it to work in high-voltage motor control systems, especially in environments that require high voltage and current loads, it can provide stable and reliable control.
The 800V drain-source voltage and 5A drain current of the SSS5N80C-VB make it an ideal choice for a variety of high-voltage applications, especially for switching power supplies, industrial power management, motor drive systems, and solar inverters. Its low on-resistance and high-efficiency switching performance help improve the overall performance and stability of the power system.
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