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SSS5N60-VB Product details
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Product Introduction
SSS5N60-VB is a high-voltage N-channel MOSFET in TO220F package, suitable for medium-power high-voltage switching applications. Its maximum drain-source withstand voltage (VDS) is 650V, and the gate-source voltage (VGS) can withstand a maximum of ±30V, which can adapt to a wide operating voltage range. The switching voltage (Vth) of this MOSFET is 3.5V, and it has a high on-resistance (RDS(ON) = 2560mΩ) when the gate-source voltage is 10V. The maximum drain current (ID) is 4A, which is suitable for use in low to medium power high-voltage applications. It is designed based on Plannar technology to ensure good high-voltage stability and is suitable for high-voltage switching operations such as switching power supplies, motor control and other electrical equipment.
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SSS5N60-VB is a high-voltage N-channel MOSFET in TO220F package, suitable for medium-power high-voltage switching applications. Its maximum drain-source withstand voltage (VDS) is 650V, and the gate-source voltage (VGS) can withstand a maximum of ±30V, which can adapt to a wide operating voltage range. The switching voltage (Vth) of this MOSFET is 3.5V, and it has a high on-resistance (RDS(ON) = 2560mΩ) when the gate-source voltage is 10V. The maximum drain current (ID) is 4A, which is suitable for use in low to medium power high-voltage applications. It is designed based on Plannar technology to ensure good high-voltage stability and is suitable for high-voltage switching operations such as switching power supplies, motor control and other electrical equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
| Parameter | Specification | Description|
|-----------------|------------------------------------|-------------------------------------------|
| **Package** | TO220F | Suitable for high-power applications, providing good heat dissipation performance. |
| **Channel Configuration** | Single N-channel | Adopts N-channel configuration, suitable for high-voltage and high-current applications. |
| **VDS** | 650V | Maximum drain-source withstand voltage 650V, suitable for high-voltage circuits. |
| **VGS** | ±30V | Maximum gate-source withstand voltage, suitable for high-voltage drive circuits. |
| **Vth** | 3.5V | Turn-on voltage, controls the on and off of MOSFET. |
| **RDS(ON)** | 2560mΩ@VGS=10V | Relatively high on-resistance, suitable for low-power loads. |
| **ID** | 4A | Maximum drain current is 4A, suitable for low power loads. |
| **Technology** | Plannar technology | Planar technology is used to optimize the high voltage characteristics of MOSFET. |
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| Parameter | Specification | Description|
|-----------------|------------------------------------|-------------------------------------------|
| **Package** | TO220F | Suitable for high-power applications, providing good heat dissipation performance. |
| **Channel Configuration** | Single N-channel | Adopts N-channel configuration, suitable for high-voltage and high-current applications. |
| **VDS** | 650V | Maximum drain-source withstand voltage 650V, suitable for high-voltage circuits. |
| **VGS** | ±30V | Maximum gate-source withstand voltage, suitable for high-voltage drive circuits. |
| **Vth** | 3.5V | Turn-on voltage, controls the on and off of MOSFET. |
| **RDS(ON)** | 2560mΩ@VGS=10V | Relatively high on-resistance, suitable for low-power loads. |
| **ID** | 4A | Maximum drain current is 4A, suitable for low power loads. |
| **Technology** | Plannar technology | Planar technology is used to optimize the high voltage characteristics of MOSFET. |
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Domain and module applications：
Application fields and module examples
1. **High-voltage switching power supply**
SSS5N60-VB is suitable for high-voltage switching power supply design, especially in AC-DC converters operating at 650V. This MOSFET can work stably in circuits with high switching frequencies, ensuring that the power supply can perform power conversion efficiently and safely.
2. **Motor drive**
SSS5N60-VB is suitable for low-power motor control applications, such as small power tools, household appliances, etc. Due to its 650V withstand voltage, it is suitable for use in the control circuit of driving the motor, and can effectively control the start and stop and speed regulation of the motor.
3. **Home appliance power module**
This MOSFET can also be widely used in power management modules in home appliances, especially in the power circuits of equipment such as air conditioners and refrigerators. It can work stably in high-voltage environments, ensuring that the equipment can provide stable power.
4. **Industrial control equipment**
In industrial automation control equipment, SSS5N60-VB is often used as a switching element in high-voltage drive modules, such as inverters, servo drive systems, etc. It enables efficient current control and power regulation in high-voltage power supply systems.
5. **Inverter and photovoltaic applications**
Due to its high-voltage characteristics, SSS5N60-VB is also suitable for inverter and photovoltaic cell systems. In solar power generation systems, this MOSFET can effectively convert DC power into AC power and provide stable power output to the grid.
With a high-voltage tolerance of 650V and a maximum drain current of 4A, SSS5N60-VB is suitable for a variety of application scenarios such as switching power supplies, motor drives, home appliance power modules, industrial control equipment, and photovoltaic inverters.
1. **High-voltage switching power supply**
SSS5N60-VB is suitable for high-voltage switching power supply design, especially in AC-DC converters operating at 650V. This MOSFET can work stably in circuits with high switching frequencies, ensuring that the power supply can perform power conversion efficiently and safely.
2. **Motor drive**
SSS5N60-VB is suitable for low-power motor control applications, such as small power tools, household appliances, etc. Due to its 650V withstand voltage, it is suitable for use in the control circuit of driving the motor, and can effectively control the start and stop and speed regulation of the motor.
3. **Home appliance power module**
This MOSFET can also be widely used in power management modules in home appliances, especially in the power circuits of equipment such as air conditioners and refrigerators. It can work stably in high-voltage environments, ensuring that the equipment can provide stable power.
4. **Industrial control equipment**
In industrial automation control equipment, SSS5N60-VB is often used as a switching element in high-voltage drive modules, such as inverters, servo drive systems, etc. It enables efficient current control and power regulation in high-voltage power supply systems.
5. **Inverter and photovoltaic applications**
Due to its high-voltage characteristics, SSS5N60-VB is also suitable for inverter and photovoltaic cell systems. In solar power generation systems, this MOSFET can effectively convert DC power into AC power and provide stable power output to the grid.
With a high-voltage tolerance of 650V and a maximum drain current of 4A, SSS5N60-VB is suitable for a variety of application scenarios such as switching power supplies, motor drives, home appliance power modules, industrial control equipment, and photovoltaic inverters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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