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SSS3N70-VB Product details
Back to previous pageProduct introduction：
1. **SSS3N70-VB Product Introduction**
SSS3N70-VB is a unipolar N-channel MOSFET designed based on Planar technology. It is packaged in TO220F package with a drain-source voltage (VDS) of up to 700V and a maximum drain current (ID) of 7A. The threshold voltage (Vth) of this MOSFET is 3.5V, which can provide fast response under appropriate gate voltage. Its on-resistance (RDS(ON)) is 1000mΩ @ VGS=4.5V and 800mΩ @ VGS=10V, which is suitable for high-voltage power switching applications and can effectively reduce power loss. SSS3N70-VB is mainly used for power management, power conversion, and power control in electric equipment. It is widely used in high-voltage power systems and other fields requiring high-efficiency switches.
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SSS3N70-VB is a unipolar N-channel MOSFET designed based on Planar technology. It is packaged in TO220F package with a drain-source voltage (VDS) of up to 700V and a maximum drain current (ID) of 7A. The threshold voltage (Vth) of this MOSFET is 3.5V, which can provide fast response under appropriate gate voltage. Its on-resistance (RDS(ON)) is 1000mΩ @ VGS=4.5V and 800mΩ @ VGS=10V, which is suitable for high-voltage power switching applications and can effectively reduce power loss. SSS3N70-VB is mainly used for power management, power conversion, and power control in electric equipment. It is widely used in high-voltage power systems and other fields requiring high-efficiency switches.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 7A | 800mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. **SSS3N70-VB Detailed Parameter Description**
| **Parameter Category** | **Parameter Value** | **Description** |
|----------------------|------------------------------------|------------------------------------------------|
| **Package Type** | TO220F | Provides good heat dissipation and high current carrying capacity|
| **Configuration** | Unipolar N-channel | Provides efficient current conduction, suitable for various high-voltage power control applications|
| **Drain-Source Voltage (VDS)** | 700V | Suitable for high-voltage power conversion and power management applications|
| **Gate Voltage (VGS)** | ±30V | Can operate safely within the range of ±30V|
| **Threshold Voltage (Vth)** | 3.5V | Moderate start-up voltage to ensure good switching performance|
| **On-resistance (RDS(ON))** | 1000mΩ @ VGS=4.5V / 800mΩ @ VGS=10V| Lower on-resistance for high-efficiency power switching applications|
| **Drain Current (ID)** | 7A | Maximum support current for low and medium power switching applications|
| **Technology Type** | Planar Technology| Provides lower on-resistance and lower switching losses|
| **Operating Temperature Range** | -55°C to 150°C | Wide operating temperature range ensures stable operation under various environmental conditions|
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| **Parameter Category** | **Parameter Value** | **Description** |
|----------------------|------------------------------------|------------------------------------------------|
| **Package Type** | TO220F | Provides good heat dissipation and high current carrying capacity|
| **Configuration** | Unipolar N-channel | Provides efficient current conduction, suitable for various high-voltage power control applications|
| **Drain-Source Voltage (VDS)** | 700V | Suitable for high-voltage power conversion and power management applications|
| **Gate Voltage (VGS)** | ±30V | Can operate safely within the range of ±30V|
| **Threshold Voltage (Vth)** | 3.5V | Moderate start-up voltage to ensure good switching performance|
| **On-resistance (RDS(ON))** | 1000mΩ @ VGS=4.5V / 800mΩ @ VGS=10V| Lower on-resistance for high-efficiency power switching applications|
| **Drain Current (ID)** | 7A | Maximum support current for low and medium power switching applications|
| **Technology Type** | Planar Technology| Provides lower on-resistance and lower switching losses|
| **Operating Temperature Range** | -55°C to 150°C | Wide operating temperature range ensures stable operation under various environmental conditions|
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Domain and module applications：
3. **Application fields and module examples**
1. **High-voltage power converter**
- **Application module**: DC/DC converter, AC/DC power supply, power factor correction (PFC) circuit.
- **Example**: SSS3N70-VB MOSFET is commonly used in high-voltage power management systems, especially in DC/DC converters and AC/DC power modules. Its high drain-source voltage of up to 700V enables it to handle higher voltage power conversion requirements, while its low on-resistance can effectively reduce power loss and improve conversion efficiency. This MOSFET can be widely used in high-efficiency power systems such as industrial power supplies, chargers, and battery management systems.
2. **Power tool and power equipment drive**
- **Application module**: Motor drive, power tool power management.
- **Example**: SSS3N70-VB also has important applications in motor drive systems for power tools and power equipment. In these high-power demand applications, the SSS3N70-VB can be used as an efficient power switch to help control the start-up and operation of the motor. Its low on-resistance ensures high efficiency when driving the motor and reduces heat loss in the system.
3. **Home appliances and consumer electronics**
- **Application modules**: smart home power supply, home appliance power supply system.
- **Example**: SSS3N70-VB MOSFET is also suitable for power modules of some home appliances, especially in home appliances that require higher power output. For example, in the power management of smart home devices, MOSFET can be used to regulate power and improve efficiency while keeping the device stable under high load. Its higher drain-source voltage (700V) enables it to handle higher-power home appliances such as air conditioners, microwave ovens, etc.
4. **Automotive electronic systems**
- **Application modules**: automotive power management, electric vehicle battery management.
- **Example**: In the battery management system (BMS) of electric vehicles and hybrid vehicles, the SSS3N70-VB MOSFET can be used for battery charge and discharge control to ensure the current stability during battery charging. Its high drain-source voltage and large current carrying capacity enable it to provide reliable power switching in high-voltage battery systems, helping to optimize energy management and improve battery efficiency.
5. **High-frequency power amplifier**
- **Application module**: Radio frequency (RF) power amplifier.
- **Example**: In wireless communication systems, the SSS3N70-VB can also be used as a key component in the RF power amplifier to ensure efficient amplification of high-power signals. Its high-voltage capability and low switching loss make it suitable for high-power signal amplification and widely used in systems such as base stations and radio frequency power amplifiers.
The wide application of the SSS3N70-VB MOSFET in multiple fields demonstrates its advantages in high voltage, power conversion and power switching. Its efficient performance and reliability make it an important power switching component in high-performance systems such as power management, electric device drives, automotive electronics and communications.
1. **High-voltage power converter**
- **Application module**: DC/DC converter, AC/DC power supply, power factor correction (PFC) circuit.
- **Example**: SSS3N70-VB MOSFET is commonly used in high-voltage power management systems, especially in DC/DC converters and AC/DC power modules. Its high drain-source voltage of up to 700V enables it to handle higher voltage power conversion requirements, while its low on-resistance can effectively reduce power loss and improve conversion efficiency. This MOSFET can be widely used in high-efficiency power systems such as industrial power supplies, chargers, and battery management systems.
2. **Power tool and power equipment drive**
- **Application module**: Motor drive, power tool power management.
- **Example**: SSS3N70-VB also has important applications in motor drive systems for power tools and power equipment. In these high-power demand applications, the SSS3N70-VB can be used as an efficient power switch to help control the start-up and operation of the motor. Its low on-resistance ensures high efficiency when driving the motor and reduces heat loss in the system.
3. **Home appliances and consumer electronics**
- **Application modules**: smart home power supply, home appliance power supply system.
- **Example**: SSS3N70-VB MOSFET is also suitable for power modules of some home appliances, especially in home appliances that require higher power output. For example, in the power management of smart home devices, MOSFET can be used to regulate power and improve efficiency while keeping the device stable under high load. Its higher drain-source voltage (700V) enables it to handle higher-power home appliances such as air conditioners, microwave ovens, etc.
4. **Automotive electronic systems**
- **Application modules**: automotive power management, electric vehicle battery management.
- **Example**: In the battery management system (BMS) of electric vehicles and hybrid vehicles, the SSS3N70-VB MOSFET can be used for battery charge and discharge control to ensure the current stability during battery charging. Its high drain-source voltage and large current carrying capacity enable it to provide reliable power switching in high-voltage battery systems, helping to optimize energy management and improve battery efficiency.
5. **High-frequency power amplifier**
- **Application module**: Radio frequency (RF) power amplifier.
- **Example**: In wireless communication systems, the SSS3N70-VB can also be used as a key component in the RF power amplifier to ensure efficient amplification of high-power signals. Its high-voltage capability and low switching loss make it suitable for high-power signal amplification and widely used in systems such as base stations and radio frequency power amplifiers.
The wide application of the SSS3N70-VB MOSFET in multiple fields demonstrates its advantages in high voltage, power conversion and power switching. Its efficient performance and reliability make it an important power switching component in high-performance systems such as power management, electric device drives, automotive electronics and communications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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