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SSS2N60-VB Product details

Product introduction:

Product Introduction

SSS2N60-VB is a single N-channel MOSFET in TO220F package, suitable for medium and low power switching and control applications. Its maximum drain-source voltage (VDS) is 650V, which can withstand higher voltages and has a maximum drain current (ID) of 2A. This MOSFET uses Plannar technology and is suitable for applications such as power management, motor drive, and power conversion. Although its on-resistance (RDS(ON)=1700mΩ) is relatively high, it has excellent switching performance and stability in low current and high voltage environments, making it suitable for high voltage switching circuits and other related fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 2A 1700mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 2A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 2A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
Detailed parameter description

| Parameter| Description|
|--------------------|------------------------------------------|
| **Package type** | TO220F |
| **Channel type** | Single N-channel|
| **Drain-source voltage (VDS)** | 650V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 1700mΩ (VGS=10V) |
| **Maximum drain current (ID)** | 2A |
| **Technology** | Plannar technology|

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Domain and module applications:

Applications and module examples

1. **Power management system**
Due to its 650V withstand voltage, the SSS2N60-VB is ideal for high voltage power management systems. In particular, in power conversion modules such as high voltage DC-DC converters and AC-DC power adapters, it can operate stably in high voltage and relatively low current applications. Its higher on-resistance makes it suitable for applications that do not require extremely low conduction losses.

2. **Inverter system**
The SSS2N60-VB is suitable for use in inverters, especially in solar inverters, wind power inverters and other fields. The 650V withstand voltage range enables it to withstand higher voltages, while the 2A drain current is sufficient to meet the needs of small inverters. This MOSFET can provide stable switching performance and low power consumption, playing an important role in efficient power conversion and inversion.

3. **Motor drive applications**
In motor drive systems, the SSS2N60-VB can also provide reliable switching control, especially for low-power motor drive and control. It can be used as the main switching element in high-voltage motor control systems to control the current flow of the motor and ensure stable operation of the motor.

4. **Automotive electronic systems**
In automotive electronic applications, the SSS2N60-VB can be used in battery management systems (BMS) and high-voltage control modules. The 650V withstand voltage capability makes it suitable for current switching and control in high-voltage environments, especially high-voltage power control systems in electric vehicles (EV) and hybrid vehicles (HEV).

5. **Switching power supplies and electrical isolation**
The SSS2N60-VB is also very useful in high-voltage switching power supplies, especially in applications where electrical isolation is required. By acting as a high-voltage switch, the MOSFET can provide stable current control and achieve good performance in power management.

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In summary, the SSS2N60-VB is suitable for power management, motor drive, inverter, automotive electronics and other fields with its 650V drain-source voltage and 2A drain current, especially for high voltage applications, and can provide stable and reliable switching performance. Although its on-resistance is relatively high, it performs well in low current and high voltage applications, and is suitable for a variety of medium and low power switching and control scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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