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SSR4N60BTF-VB Product details

Product introduction:

Product Introduction

**SSR4N60BTF-VB** is a single N-channel MOSFET in a TO252 package suitable for high voltage, high power control applications. This MOSFET has a drain-source voltage (VDS) of 650V and a drain current (ID) of 4A, making it ideal for applications such as switching power supplies and load drives that require high voltage and medium current. Its threshold voltage (Vth) is 3.5V and has a moderate on-resistance, with an RDS(ON) of 2750mΩ at a VGS of 4.5V and an RDS(ON) of 2200mΩ at a VGS of 10V. Using Plannar technology, the switching characteristics and thermal performance of this MOSFET excel in medium current and high voltage applications, providing stable performance and low switching losses.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 4A 2200mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 4A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 4A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Parameter Description

| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|--------------------------------------------------------------|
| **Package Type** | TO252 | Small package, suitable for space-constrained applications, capable of carrying higher currents and providing good thermal performance. |
| **Configuration** | Single N-channel | Suitable for high-efficiency power switch control and drive circuits. |
| **Drain-Source Voltage (VDS)** | 650V | Suitable for high-voltage switch control, capable of handling high voltages of 650V. |
| **Gate-Source Voltage (VGS)** | ±30V | Provides higher gate withstand voltage, enhancing device stability and reliability. |
| **Threshold Voltage (Vth)** | 3.5V | Moderate threshold voltage, capable of fast response and switching operations. |
| **On-resistance (RDS(ON))** | 2750mΩ (@VGS=4.5V) | Relatively high on-resistance, suitable for low power or low current applications. |
| **On-resistance (RDS(ON))** | 2200mΩ (@VGS=10V) | Lower on-resistance improves efficiency when large currents flow. |
| **Drain current (ID)** | 4A | Capable of providing up to 4A of current output, suitable for medium current load driving. |
| **Technology** | Plannar | Using Plannar technology, providing excellent thermal management performance and stable operating conditions. |

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Domain and module applications:

Application fields and module examples

1. **Switching Power Supplies**
Due to its high drain-source voltage (650V) and moderate on-resistance, the SSR4N60BTF-VB is very suitable for use in switching power supplies (SMPS). It is particularly suitable for medium-power DC-DC converters, AC-DC power supplies, and power converters. This MOSFET can effectively increase switching frequency and conversion efficiency, and reduce energy loss in power supply circuits.

2. **Motor Drivers**
In motor drive applications, the SSR4N60BTF-VB can efficiently control current and provide stable drive current. It is suitable for low-power DC motors and stepper motor drive systems, especially in home appliances, automation equipment, and robotics, for controlling the start and stop and speed regulation of motors.

3. **Load Switches**
This MOSFET performs well in load switch applications, responding quickly and switching efficiently. It is suitable for power switches in low-power devices such as LED lighting, portable electronic devices, etc., which can reduce standby power consumption and provide efficient switch control.

4. **Battery Charging Systems**
In battery management and charging systems, SSR4N60BTF-VB can be used for power management and battery protection modules. Its high withstand voltage and high current carrying capacity make it suitable for charging systems of equipment such as power tools and electric bicycles. It can ensure stability during the charging process and reduce the risk of overcharging and over-discharging of the battery.

5. **Power Factor Correction (PFC) Circuit**
In the power factor correction circuit, SSR4N60BTF-VB can provide efficient power conversion due to its high VDS and low on-resistance. It effectively improves the power factor and reduces power loss in the power supply system, and is widely used in large power modules and industrial equipment.

6. **Power Modules for TVs and Displays**
This MOSFET has important applications in TV and display power modules, and can provide stable power control under high voltage and high frequency conditions to ensure reliable operation of the equipment. It is suitable for high-efficiency power modules such as LED backlight power supplies and LCD displays to reduce power loss and improve system performance.

7. **Home Appliances**
In home appliances such as air conditioners, refrigerators, and electric water heaters, SSR4N60BTF-VB is used to provide efficient power management. Its higher drain-source voltage and moderate on-resistance enable it to effectively regulate power transmission in home appliances, keeping power loss and temperature low.

8. **Power Control Systems**
SSR4N60BTF-VB can be used for high voltage and high power control in various power control systems. Its stable current carrying capacity and high VDS make it suitable for power conversion, load control and equipment protection circuits, ensuring efficient and stable operation of the power system.

In summary, SSR4N60BTF-VB is suitable for various medium current and high voltage switching applications, especially in the fields of switching power supplies, motor drives, battery charging, power control and home appliances, and can provide efficient and reliable current control and power conversion functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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