中文
English
SSR3055L-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**SSR3055L-VB** is a single-channel N-type MOSFET in TO252 package with low on-resistance and high current carrying capacity, suitable for low-voltage, high-efficiency energy conversion applications. The maximum drain-source voltage of this MOSFET is 60V, the maximum gate-source voltage is ±20V, and the threshold voltage is 1.7V, which can effectively switch at a lower gate voltage. Its on-resistance is 73mΩ at VGS=10V and 85mΩ at VGS=4.5V, which is suitable for medium and high power applications. The product has a maximum drain current of 18A, which can provide efficient power transmission and efficient switching characteristics, and is widely used in power management, battery drive, load control and other fields.
---
**SSR3055L-VB** is a single-channel N-type MOSFET in TO252 package with low on-resistance and high current carrying capacity, suitable for low-voltage, high-efficiency energy conversion applications. The maximum drain-source voltage of this MOSFET is 60V, the maximum gate-source voltage is ±20V, and the threshold voltage is 1.7V, which can effectively switch at a lower gate voltage. Its on-resistance is 73mΩ at VGS=10V and 85mΩ at VGS=4.5V, which is suitable for medium and high power applications. The product has a maximum drain current of 18A, which can provide efficient power transmission and efficient switching characteristics, and is widely used in power management, battery drive, load control and other fields.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| Parameter| Value| Unit| Description|
|------------------|------------------------|---------------|----------------------------------|
| **Package type** | TO252 | - | Small package for space-constrained high-efficiency energy conversion applications|
| **Configuration** | Single channel N-type| - | High-efficiency power switch for low-voltage, high-efficiency energy transmission and control|
| **Maximum drain-source voltage (VDS)** | 60 | V | Suitable for low-voltage power management and power conversion systems|
| **Maximum gate-source voltage (VGS)** | ±20 | V | Provides a wide driving voltage range|
| **Threshold voltage (Vth)** | 1.7 | V | Low threshold voltage enables startup at lower gate voltages|
| **On-resistance (RDS(ON))** | 85 (VGS=4.5V) / 73 (VGS=10V) | mΩ | Very low on-resistance, reduced energy loss, suitable for efficient energy transfer|
| **Continuous drain current (ID)** | 18 | A | Suitable for controlling and driving medium and high current loads|
| **Technology type** | Trench | - | Using Trench technology to reduce on-resistance and improve efficiency|
---
| Parameter| Value| Unit| Description|
|------------------|------------------------|---------------|----------------------------------|
| **Package type** | TO252 | - | Small package for space-constrained high-efficiency energy conversion applications|
| **Configuration** | Single channel N-type| - | High-efficiency power switch for low-voltage, high-efficiency energy transmission and control|
| **Maximum drain-source voltage (VDS)** | 60 | V | Suitable for low-voltage power management and power conversion systems|
| **Maximum gate-source voltage (VGS)** | ±20 | V | Provides a wide driving voltage range|
| **Threshold voltage (Vth)** | 1.7 | V | Low threshold voltage enables startup at lower gate voltages|
| **On-resistance (RDS(ON))** | 85 (VGS=4.5V) / 73 (VGS=10V) | mΩ | Very low on-resistance, reduced energy loss, suitable for efficient energy transfer|
| **Continuous drain current (ID)** | 18 | A | Suitable for controlling and driving medium and high current loads|
| **Technology type** | Trench | - | Using Trench technology to reduce on-resistance and improve efficiency|
---
Domain and module applications：
Applications and module examples
1. **DC-DC power converter**
The low on-resistance and high current carrying capacity of the **SSR3055L-VB** make it very suitable for use in high-efficiency DC-DC converters, especially in power management applications that require high efficiency and low power consumption. It can handle high currents and reduce losses, and is suitable for providing stable and efficient power to various electronic devices (such as communication equipment, power tools, etc.).
2. **Battery Management System (BMS)**
This MOSFET is suitable for battery management systems (BMS) to provide switching control during battery charging and discharging. The high current carrying capacity and low on-resistance characteristics of the SSR3055L-VB make it an important component of battery management systems in electric vehicles, power tools and energy storage systems, helping to improve the efficiency and reliability of battery systems.
3. **Power Factor Correction (PFC) Circuit**
In the Power Factor Correction (PFC) circuit, the SSR3055L-VB helps improve the power factor of the power system and reduce energy loss through its fast switching performance and low on-resistance, and is particularly suitable for high-efficiency power systems such as computer power supplies, UPS and server power supplies.
4. **LED Driver**
This MOSFET is also suitable for LED driver power modules to stabilize current and efficiently drive high-power LEDs. The low RDS(ON) characteristics of the SSR3055L-VB help reduce energy loss and improve system efficiency, especially in commercial lighting, indoor lighting and other high-efficiency lighting systems.
5. **Motor Drive**
In motor drive applications, the SSR3055L-VB can be used to provide efficient current control, especially for the control of small and medium power motors, such as power tools, electric fans, home appliances and other equipment. Its high current carrying capacity ensures the stability of motor starting and operation.
6. **Switching Power Supply (SMPS)**
SSR3055L-VB can be used as a switching element in a switching power supply (SMPS). Its high-efficiency switching characteristics reduce power loss and are suitable for power systems that require stable voltage output, such as TVs, computers, and audio equipment.
In general, SSR3055L-VB is widely used in various high-efficiency energy conversion and power management systems with its low on-resistance, high current carrying capacity, and Trench technology, helping to achieve higher system efficiency and lower power consumption.
1. **DC-DC power converter**
The low on-resistance and high current carrying capacity of the **SSR3055L-VB** make it very suitable for use in high-efficiency DC-DC converters, especially in power management applications that require high efficiency and low power consumption. It can handle high currents and reduce losses, and is suitable for providing stable and efficient power to various electronic devices (such as communication equipment, power tools, etc.).
2. **Battery Management System (BMS)**
This MOSFET is suitable for battery management systems (BMS) to provide switching control during battery charging and discharging. The high current carrying capacity and low on-resistance characteristics of the SSR3055L-VB make it an important component of battery management systems in electric vehicles, power tools and energy storage systems, helping to improve the efficiency and reliability of battery systems.
3. **Power Factor Correction (PFC) Circuit**
In the Power Factor Correction (PFC) circuit, the SSR3055L-VB helps improve the power factor of the power system and reduce energy loss through its fast switching performance and low on-resistance, and is particularly suitable for high-efficiency power systems such as computer power supplies, UPS and server power supplies.
4. **LED Driver**
This MOSFET is also suitable for LED driver power modules to stabilize current and efficiently drive high-power LEDs. The low RDS(ON) characteristics of the SSR3055L-VB help reduce energy loss and improve system efficiency, especially in commercial lighting, indoor lighting and other high-efficiency lighting systems.
5. **Motor Drive**
In motor drive applications, the SSR3055L-VB can be used to provide efficient current control, especially for the control of small and medium power motors, such as power tools, electric fans, home appliances and other equipment. Its high current carrying capacity ensures the stability of motor starting and operation.
6. **Switching Power Supply (SMPS)**
SSR3055L-VB can be used as a switching element in a switching power supply (SMPS). Its high-efficiency switching characteristics reduce power loss and are suitable for power systems that require stable voltage output, such as TVs, computers, and audio equipment.
In general, SSR3055L-VB is widely used in various high-efficiency energy conversion and power management systems with its low on-resistance, high current carrying capacity, and Trench technology, helping to achieve higher system efficiency and lower power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
