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SSP60N06A-VB Product details

Product introduction:

Product Introduction

**SSP60N06A-VB** is a **single-channel N-type MOSFET** in a **TO220 package** with excellent performance and reliability. Its design focuses on efficient current management, supporting a maximum drain-source voltage (VDS)** of **60V and a **gate-source voltage (VGS)** of **±20V. Its **RDS(ON)** can be as low as **11mΩ (at VGS=10V)**, demonstrating low conduction losses and excellent efficiency. With **60A of continuous drain current (ID)** and advanced **Trench technology**, this model performs well in a variety of power-intensive applications and is suitable for a variety of power conversion and motor drive scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 60V 1.7V 60A 11mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 60V 1.7V 60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 60V 1.7V 60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Parameter Detailed Description

| **Parameter Category** | **Parameter Value** | **Description** |
|----------------|-------------------------|---------------------------------------------------|
| **Package Type** | TO220 | Provides good heat dissipation and high power handling capability. |
| **Polarity and Configuration** | Single Channel N-Type | Supports single channel control and simple design. |
| **Drain-Source Voltage (VDS)** | 60V | Supports drain-source voltage up to 60V, suitable for low and medium voltage scenarios. |
| **Gate-Source Voltage (VGS)** | ±20V | Can withstand gate-source voltage of positive and negative 20V, enhancing control flexibility. |
| **Turning Voltage (Vth)** | 1.7V | Can be turned on at low gate drive voltage, compatible with low voltage control logic. |
| **On-resistance (RDS(ON))** | 13mΩ @ VGS=4.5V
11mΩ @ VGS=10V | Extremely low conduction loss at different drive voltages, improving efficiency. |
| **Continuous drain current (ID)** | 60A | Supports current output up to 60A, suitable for high power applications. |
| **Technology** | Trench | Advanced trench technology to reduce on-resistance and switching losses. |

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Domain and module applications:

Application fields and module examples

1. **Switching Power Supply (SMPS)**
- In medium and low voltage switching power supplies, SSP60N06A-VB can be used as the main power switching element. Its low on-resistance and high current capability reduce power loss and improve conversion efficiency, and is suitable for LED driver power supplies, chargers and adapters.

2. **Motor Drive**
- In the drive module of brushless DC motor (BLDC), this MOSFET provides stable current control through its efficient switching characteristics and strong current carrying capacity, and is suitable for power tools, power windows and fans.

3. **Battery Management System (BMS)**
- SSP60N06A-VB is well qualified for current distribution and protection circuits in battery management systems, ensuring safety and efficiency in high current applications, and is widely used in discharge management and protection circuits of lithium battery packs.

4. **DC-DC Converter**
- In medium and low voltage DC-DC converter modules, it can be used as a synchronous rectifier or main power switch, with its low loss and fast response performance, to improve conversion efficiency, suitable for communication base stations, power equipment and automotive electronics.

5. **Photovoltaic Inverter**
- In the micro inverter of the home photovoltaic power generation system, it is used for medium and low voltage level power conversion, providing stable current control and high-efficiency power transfer.

Through its low loss, excellent thermal performance and high reliability, **SSP60N06A-VB** excels in multiple fields and is an ideal choice for power conversion and control modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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