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SSN3134K-VB Product details

Product introduction:

1. **Product Introduction:**

SSN3134K-VB is a unipolar P-type MOSFET in a **SOT723-3** package, designed for a variety of power management and switching applications. The device has a **-20V** drain-source voltage (V_DS) and uses advanced **Trench technology** to optimize performance. Its **threshold voltage (V_th)** is **-0.45V**, which can provide efficient switching characteristics and withstand a maximum **-0.78A** leakage current (I_D).

This MOSFET is suitable for low-voltage, low-current circuits, especially in applications that require efficient switching and have high requirements for space and energy efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT723-3 Single-P -20V -0.45V -0.78A 380mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT723-3 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT723-3 Single-P -20V -0.45V -0.78A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT723-3 Single-P -20V -0.45V -0.78A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT723-3 Single-P
2. **Detailed parameter description:**

- **Package type:** SOT723-3
- **Configuration:** Unipolar P-type MOSFET
- **Drain-source voltage (V_DS):** -20V
- **Gate-source voltage (V_GS):** ±20V
- **Threshold voltage (V_th):** -0.45V
- **On-resistance (R_DS(ON)):**
- When V_GS = 4.5V: 456mΩ
- When V_GS = 10V: 380mΩ
- **Continuous leakage current (I_D):** -0.78A
- **Technology:** Trench technology
- **Gate charge (Q_g):** (This data is usually provided in the data sheet)
- **Input capacitance (C_iss):** (Also usually provided in the data sheet)
- **Thermal resistance (R_thJA):** (This data is usually included in the data sheet)

Domain and module applications:

3. **Application Examples:**

SSN3134K-VB is suitable for a variety of applications that require compact space, low current and low voltage operation. Here are some potential application areas:

#### **Power Circuits:**
- **DC-DC Converters:** This MOSFET can be used in **Buck** or **Boost** converters to achieve efficient switching at low voltages such as 5V or 12V. Its low R_DS(ON) ensures minimal power loss, suitable for energy-saving designs.

#### **Battery-Driven Systems:**
- **Portable Electronic Devices:** With its maximum current rating of 0.78A, SSN3134K-VB can be widely used in **battery-powered applications** such as **handheld devices**, **wearable devices** and **low-power sensors**. Its low R_DS(ON) reduces power loss and extends battery life.

#### **Load Switch:**
- **Low Power Load Switch:** This MOSFET is suitable for low voltage **load switching applications**, such as controlling small loads like **LED drivers** or **microcontrollers**. Its efficient switching characteristics help improve overall system efficiency.

#### **Protection Circuits:**
- **Reverse Polarity Protection:** The SSN3134K-VB can be used in **reverse polarity protection circuits**, where its low threshold voltage and fast switching response help protect sensitive components from damage caused by voltage spikes or reverse polarity.

#### **Signal Switch:**
- **Analog Signal Switch:** Due to its P-type configuration, the SSN3134K-VB is suitable for **analog signal switching** applications, such as **audio systems** or **communication equipment**, which require low power consumption and fast switching response.

In all of the above applications, SSN3134K-VB provides efficient, compact and reliable solutions for **portable, low power, high performance** applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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