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SSM9922EO-VB Product details
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1. **Product Introduction:**
SSM9922EO-VB is a common drain-grounded dual N-channel MOSFET (Common Drain-N+N-Channel) in TSSOP8 package, with efficient current control and low conduction loss characteristics. This product has a maximum drain-source voltage (VDS) of 20V, a gate-source voltage (VGS) of ±12V, and a threshold voltage (Vth) range of 0.5V to 1.5V, which is suitable for low-voltage, high-efficiency switching power supplies and current regulation systems. SSM9922EO-VB uses Trench technology to provide extremely low on-resistance of 18mΩ (VGS = 2.5V) and 14mΩ (VGS = 4.5V), respectively, making it very energy-efficient in high-current (ID: 7.6A) applications. This makes it very suitable for use in electronic devices that require low power consumption, high-speed response, and high-current handling.
SSM9922EO-VB is a common drain-grounded dual N-channel MOSFET (Common Drain-N+N-Channel) in TSSOP8 package, with efficient current control and low conduction loss characteristics. This product has a maximum drain-source voltage (VDS) of 20V, a gate-source voltage (VGS) of ±12V, and a threshold voltage (Vth) range of 0.5V to 1.5V, which is suitable for low-voltage, high-efficiency switching power supplies and current regulation systems. SSM9922EO-VB uses Trench technology to provide extremely low on-resistance of 18mΩ (VGS = 2.5V) and 14mΩ (VGS = 4.5V), respectively, making it very energy-efficient in high-current (ID: 7.6A) applications. This makes it very suitable for use in electronic devices that require low power consumption, high-speed response, and high-current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
2. **Detailed parameter description:**
- **Model**: SSM9922EO-VB
- **Package type**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 18mΩ (at VGS = 2.5V)
- 14mΩ (at VGS = 4.5V)
- **Maximum drain current (ID)**: 7.6A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C Up to 150°C (depending on the application)
- **Model**: SSM9922EO-VB
- **Package type**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 18mΩ (at VGS = 2.5V)
- 14mΩ (at VGS = 4.5V)
- **Maximum drain current (ID)**: 7.6A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C Up to 150°C (depending on the application)
Domain and module applications：
**Application fields and module examples:**
#### （1）**Power management system**
SSM9922EO-VB can be widely used in power management systems, especially in DC-DC converters, power factor correction circuits (PFC), load regulation and high-efficiency power regulators. Its low on-resistance and high current handling capability enable it to effectively improve power efficiency, reduce power consumption, and optimize power stability and response speed.
#### （2）**Switching power supply and battery management**
In switching power supplies (such as DC power supplies, converters, etc.) and battery management systems, the low RDS(ON) and high current carrying capacity of SSM9922EO-VB make it an ideal switching element. It can accurately control the battery charging and discharging process, provide higher energy efficiency, and protect the battery from abnormal conditions such as overcurrent and overtemperature.
#### （3）**Load switch and current control**
This MOSFET is suitable for load switching and current control circuits. Common applications include smart home appliances, LED drivers, automation equipment, etc., which can efficiently control the flow of current and switch accurately when the load changes to ensure stable operation of the system.
#### （4） **LED drive and display control**
In the LED drive circuit, SSM9922EO-VB, as a switching element, can efficiently control the current flow of the LED lighting system, optimize brightness adjustment, and reduce energy loss. Especially in high-brightness, high-efficiency LED lighting and display equipment, it has important application value.
#### （5） **Automotive electronics**
In the field of automotive electronics, SSM9922EO-VB can be used in battery management systems, motor drives, and various vehicle-mounted electronic modules. Its high current carrying capacity and low loss characteristics are very suitable for efficient current switching control, which can provide stable power transmission and ensure the reliability and long-term use of the vehicle power system.
#### (6) **Communication equipment and high-frequency applications**
This MOSFET is also suitable for power management, current regulation and power amplifier modules in communication equipment. Due to its fast response and low power consumption, SSM9922EO-VB can play an important role in high-frequency and high-speed applications, such as power regulation and signal amplification applications in communication base stations.
### Summary:
SSM9922EO-VB is a high-performance, low-power dual N-type MOSFET in TSSOP8 package, suitable for a variety of high-current and high-efficiency applications. Its low on-resistance, high current carrying capacity and fast switching response characteristics make it widely used in power management, load switching, LED driving, automotive electronics and communication equipment, especially in systems requiring efficient current control and low power consumption.
#### （1）**Power management system**
SSM9922EO-VB can be widely used in power management systems, especially in DC-DC converters, power factor correction circuits (PFC), load regulation and high-efficiency power regulators. Its low on-resistance and high current handling capability enable it to effectively improve power efficiency, reduce power consumption, and optimize power stability and response speed.
#### （2）**Switching power supply and battery management**
In switching power supplies (such as DC power supplies, converters, etc.) and battery management systems, the low RDS(ON) and high current carrying capacity of SSM9922EO-VB make it an ideal switching element. It can accurately control the battery charging and discharging process, provide higher energy efficiency, and protect the battery from abnormal conditions such as overcurrent and overtemperature.
#### （3）**Load switch and current control**
This MOSFET is suitable for load switching and current control circuits. Common applications include smart home appliances, LED drivers, automation equipment, etc., which can efficiently control the flow of current and switch accurately when the load changes to ensure stable operation of the system.
#### （4） **LED drive and display control**
In the LED drive circuit, SSM9922EO-VB, as a switching element, can efficiently control the current flow of the LED lighting system, optimize brightness adjustment, and reduce energy loss. Especially in high-brightness, high-efficiency LED lighting and display equipment, it has important application value.
#### （5） **Automotive electronics**
In the field of automotive electronics, SSM9922EO-VB can be used in battery management systems, motor drives, and various vehicle-mounted electronic modules. Its high current carrying capacity and low loss characteristics are very suitable for efficient current switching control, which can provide stable power transmission and ensure the reliability and long-term use of the vehicle power system.
#### (6) **Communication equipment and high-frequency applications**
This MOSFET is also suitable for power management, current regulation and power amplifier modules in communication equipment. Due to its fast response and low power consumption, SSM9922EO-VB can play an important role in high-frequency and high-speed applications, such as power regulation and signal amplification applications in communication base stations.
### Summary:
SSM9922EO-VB is a high-performance, low-power dual N-type MOSFET in TSSOP8 package, suitable for a variety of high-current and high-efficiency applications. Its low on-resistance, high current carrying capacity and fast switching response characteristics make it widely used in power management, load switching, LED driving, automotive electronics and communication equipment, especially in systems requiring efficient current control and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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