Product introduction:
1. Product Introduction
**SSM6L09FU-VB** is a dual N+P channel MOSFET in SC70-6 package, suitable for low voltage and high efficiency power management applications. The maximum drain-source voltage (VDS) of this product is ±20V, and the maximum gate-source voltage (VGS) is ±20V, which is suitable for low voltage systems. Its threshold voltage (Vth) is 1.0V (N channel) and -1.2V (P channel), respectively, which can work efficiently at low gate voltage, especially suitable for low power electronic design. The on-resistance (RDS(ON)) of the MOSFET is 90mΩ (N channel) and 155mΩ (P channel) at VGS = 4.5V, and 110mΩ (N channel) and 190mΩ (P channel) at VGS = 2.5V, respectively, providing lower power consumption and higher current carrying capacity. SSM6L09FU-VB adopts Trench technology, has good switching characteristics, and is suitable for various power conversion and signal conditioning applications.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
110/190mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-6 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-6 |
Dual-N+P |
|
|
|
|
|
|
|
II. Detailed parameter description
| **Parameter** | **Value** |
|-----------------|-------------------------|
| **Package** | SC70-6 |
| **Configuration** | Dual N+P channels|
| **Maximum drain-source voltage (VDS)** | ±20V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | N channel: 1.0VP channel: -1.2V |
| **On-resistance (RDS(ON))** | N channel: 110mΩ@VGS=2.5V, 90mΩ@VGS=4.5V; P channel: 190mΩ@VGS=2.5V, 155mΩ@VGS=4.5V |
| **Maximum leakage current (ID)** | N channel: 3.28A, P channel: -2.8A |
| **Technology** | Trench Technology|
| **Maximum Power Loss** | —— |
Domain and module applications:
3. Application fields and module examples
1. **Power management of portable devices**
- Due to its low RDS(ON) characteristics and small SC70-6 package, the SSM6L09FU-VB is very suitable for power management systems in portable devices that require efficient switching. For example, in applications such as smartphones, tablets, and wearable devices, it can be used for battery management, low-power power conversion, and charging circuits. Its low threshold voltage and low on-resistance ensure efficient operation at low currents, extending the battery life of the device.
2. **DC-DC converter**
- In DC-DC converters, the SSM6L09FU-VB can be used as a high-frequency switching element, especially for low-voltage, high-efficiency power conversion systems. Its dual N+P channel design enables it to provide more flexible circuit design and lower conduction losses in a single module, and is suitable for power modules such as USB power supply, LED driver, and power adapter.
3. **Battery protection circuit**
- The dual N+P channel structure of this MOSFET makes it particularly suitable for use in battery protection circuits, and can perform efficient current switching control during battery charging and discharging. SSM6L09FU-VB can effectively prevent overcharging, over-discharging and short-circuit protection, and provide low power loss to optimize battery life. Application examples include lithium battery battery management systems, e-cigarette battery management, and battery protection modules in power tools.
4. **Load switch circuit**
- In the load switch circuit, SSM6L09FU-VB can efficiently control the flow of current, especially for low-voltage, low-power systems. For example, it is used to drive LED lights, low-power sensors, and power switches for precision instruments, which can reduce heat and power consumption while improving power management efficiency.
5. **Low-power wireless communication module**
- In low-power wireless communication modules (such as Bluetooth, Zigbee, Wi-Fi, etc.), the dual N+P channel structure of SSM6L09FU-VB can be used for signal conditioning and power management. Due to its low on-resistance, it can effectively reduce the power consumption in the communication module and extend the battery working time, which is suitable for applications such as IoT devices and smart home systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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