Product introduction:
SSM6L05FU-VB Product Introduction
SSM6L05FU-VB is a bipolar N+P channel MOSFET in SC70-6 package, suitable for high-performance, low-voltage and miniaturized electronic products. Its maximum drain-source voltage (V_DS) is ±20V, and the maximum drain current (I_D) is 3.28A (N channel) and -2.8A (P channel). The device uses Trench technology, has low on-resistance (R_DS(ON)) and excellent switching performance, and is very suitable for low-power power management, load switching, signal switching and other compact electronic devices.
The features of SSM6L05FU-VB include low R_DS(ON) value, 90mΩ for N channel and 155mΩ for P channel at V_GS = 4.5V, which can effectively reduce power loss and improve system efficiency. Its bipolar configuration makes this device suitable for applications with bidirectional current control requirements. The high performance and reliability of this MOSFET make it ideal for a wide range of applications in small power modules, mobile devices, and embedded systems.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
110/190mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-6 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SC70-6 |
Dual-N+P |
±20V |
|
1.0/-1.2V |
3.28/-2.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-6 |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: SC70-6
- **Configuration**: Dual N+P channel
- **Drain-source voltage (V_DS)**: ±20V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**:
- N channel: 1.0V
- P channel: -1.2V
- **On-resistance (R_DS(ON))**:
- N channel: 90mΩ @ V_GS = 4.5V, 110mΩ @ V_GS = 2.5V
- P channel: 155mΩ @ V_GS = 4.5V, 190mΩ @ V_GS = 2.5V
- **Maximum drain current (I_D)**:
- N channel: 3.28A
- P Channel: -2.8A
- **Technology**: Trench
Domain and module applications:
Application fields and module examples
1. **Low-power power management**:
SSM6L05FU-VB can be widely used in low-power power management systems, especially in mobile devices, portable electronics and consumer electronics. Its dual N+P channel configuration is very suitable for providing stable power conversion and current control in multi-channel power output and current switching applications. This MOSFET can play an important role both in battery-powered devices and in embedded systems that require high-efficiency power management.
2. **Load switch and current switching**:
Due to its low on-resistance and high efficiency, SSM6L05FU-VB is an ideal choice for load switch applications. It can provide very low resistance values when current passes through, thereby reducing power loss, and is widely used in smart homes, battery management systems, and communication modules. In battery-powered devices, it is used to manage the power state switching of the device, provide switching functions, and effectively control the current during peak load currents.
3. **Smart Home and Sensor Applications**:
In smart home systems, SSM6L05FU-VB can be used for power management and signal switching modules, such as smart sockets, lighting control, sensor drivers and other devices. Due to its small size and high efficiency, this MOSFET can meet the needs of high-density and compact design. Its application in smart devices can effectively control current and power distribution, realize intelligent control and automatic operation.
4. **DC-DC Converter and Power Adapter**:
In DC-DC converters, SSM6L05FU-VB can provide excellent switching performance and low power loss. Due to its low R_DS(ON) characteristics, this MOSFET can be used to improve conversion efficiency, especially in battery-driven and high-frequency power conversion applications. It is suitable for portable device power adapters, power tools power supplies and other applications that require efficient power conversion.
5. **Audio equipment and signal processing modules**:
In audio equipment and signal processing circuits, SSM6L05FU-VB can also be used as a signal switch to ensure low-noise, high-precision current switching. Its low R_DS(ON) helps to avoid signal distortion and improve circuit stability. It is widely used in audio amplifiers, signal modulation and demodulation circuits, and sensor interface circuits.
6. **Embedded systems and sensor applications**:
In some embedded systems and sensor modules, the bipolar structure of SSM6L05FU-VB enables it to effectively control power switching and signal transmission. Its compact packaging and high performance make it ideal for space-constrained environments such as smart hardware, wearable devices, and Internet of Things (IoT) terminals.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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