Product introduction:
1. Product Introduction
The **SSM4957GM-VB** is a bipolar P-type MOSFET in a **SOP8** package, suitable for low-voltage, high-efficiency power management and switch control applications. This MOSFET has two P-type channels, supports **VDS = -30V** and **VGS = ±12V**, and is suitable for use in load control, power switching, and power management. Its low on-resistance (**RDS(ON)**) is **28mΩ** and **21mΩ**, respectively, providing good current control performance and low power consumption characteristics. With its high efficiency and high-density packaging, this MOSFET is particularly suitable for mobile devices, power adapters, battery management systems and other applications that require low loss and high efficiency.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-P+P |
-30V |
|
-1.7V |
-8A |
|
|
21mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-P+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-P+P |
-30V |
|
-1.7V |
-8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-P+P |
-30V |
|
-1.7V |
-8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-P+P |
|
|
|
|
|
|
|
2. Detailed parameter description
- **Package type**: SOP8
- **Configuration**: Dual P-type MOSFET
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 28mΩ (VGS=4.5V)
- 21mΩ (VGS=10V)
- **Maximum leakage current (ID)**: -8A
- **Technology process**: Trench
- **Power dissipation**: Moderate, depending on working conditions
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (RθJA)**: Low, suitable for efficient heat dissipation design
- **Maximum power consumption**: Adapts to various low to medium power management systems
Domain and module applications:
3. Application fields and module examples
1. **Battery Management System (BMS)**:
**SSM4957GM-VB** can be used for load switching and current control in **Battery Management System (BMS)**, especially in power regulation where load direction needs to be controlled. Due to its efficient conduction characteristics, it is suitable for battery charge and discharge management in mobile devices, consumer electronic devices, energy storage systems, etc. The low on-resistance of the MOSFET enables it to reduce the heat generated during battery management and increase the overall efficiency of the system.
2. **DC-DC Converter**:
This MOSFET is suitable for **DC-DC converters**, especially efficient boost and buck converters. Its low on-resistance reduces converter losses and improves system efficiency, making it suitable for a variety of devices that require stable voltage conversion, such as battery-driven devices, embedded systems, and communication equipment.
3. **Load switch applications**:
**SSM4957GM-VB** performs well in **load switch** and **current reverse control** circuits. Its dual P-type structure can help accurately control the current flow direction and is suitable for various load control occasions, such as power adapters, battery charging modules, and automatic switching circuits of equipment.
4. **Intelligent power management system**:
In the intelligent power management system, **SSM4957GM-VB** can be used to regulate the efficient switching operation of loads and power supplies to optimize power consumption. It can provide extremely low on-resistance and high current carrying capacity, making it very suitable for use in power adapters, UPS systems (uninterruptible power supplies), wireless chargers, and intelligent power modules.
5. **Automotive electronics applications**:
In the field of automotive electronics, especially in **automotive power management systems**, **SSM4957GM-VB** can be used as an efficient switching element to control vehicle power modules and battery management systems. Its low RDS(ON) enables it to reduce system heat loss under high-efficiency requirements and adapt to harsh working environments.
6. **Power amplifier and RF power control**:
In systems that require high-efficiency power amplification, **SSM4957GM-VB** is also suitable as a switching element in RF power amplifiers. Its excellent switching characteristics and low power consumption performance enable it to provide reliable performance in RF power control, signal amplification and power distribution networks.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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