Product introduction:
**SSM4507GM-VB MOSFET Product Introduction**
SSM4507GM-VB is a high-performance dual-channel MOSFET, using SOP8 package, configured as dual N+P channels (Dual-N+P). This model has low on-resistance and good current carrying capacity, suitable for various power management applications. The maximum drain-source voltage (VDS) of SSM4507GM-VB is ±30V, the maximum gate-source voltage (VGS) is 20V, and it has a low turn-on voltage (Vth): N-Channel is 1.6V, P-Channel is -1.7V. Its on-resistance (RDS(ON)) is 24mΩ (N-Channel) and 50mΩ (P-Channel) at VGS=4.5V, and 18mΩ (N-Channel) and 40mΩ (P-Channel) at VGS=10V. The maximum drain current (ID) is ±8A, which is suitable for a variety of high-efficiency power management, load switching and high-current applications.
Using Trench technology, this MOSFET can provide lower conduction loss and higher switching efficiency, and is widely used in power conversion, battery management, and other low-voltage high-efficiency switching circuits.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
|
18/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
**SSM4507GM-VB MOSFET detailed parameter description**
- **Package**: SOP8
- **Configuration**: Dual-N+P-Channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**:
- N-Channel: 1.6V
- P-Channel: -1.7V
- **On-resistance (RDS(ON))**:
- N-Channel:
- 24mΩ (VGS=4.5V)
- 18mΩ (VGS=10V)
- P-Channel:
- 50mΩ (VGS=4.5V)
- 40mΩ (VGS=10V)
- **Maximum leakage current (ID)**: ±8A
- **Maximum power loss (Pd)**: Calculated according to operating environment and current
- **Operating temperature range**: -55°C to 150°C
- **Technology**: Trench
- **Thermal resistance (RθJA)**: The specific value depends on the package and heat dissipation conditions, suitable for low to medium power density applications
- **Junction temperature (Tj)**: Maximum 150°C
- **Gate charge (Qg)**: Low, suitable for high frequency switching applications
Domain and module applications:
**Application fields and modules**
1. **Power management system**:
SSM4507GM-VB is suitable for various power management systems, especially battery-powered devices, power converters (such as DC-DC converters, step-up/step-down converters, etc.). The MOSFET provides low on-resistance and high current carrying capacity, which can maintain high efficiency and reduce power loss in power management.
2. **Load switch and power switch**:
In load switch and power switch applications, SSM4507GM-VB can be used as a switching element to control the on and off of current, which is particularly suitable for low-power switching circuits. Its dual N+P channel configuration enables the switch control of current in different directions in a single package, which is suitable for a variety of low-voltage switching systems, such as smart power supplies, sensor circuits and low-power control systems.
3. **Battery management system (BMS)**:
In the battery management system (BMS), SSM4507GM-VB can be used to control the charging and discharging process of the battery. Due to its low on-resistance and high current carrying capacity, it can maintain high efficiency in the energy management of the battery pack and is used in power tools, electric toys, electric vehicles and portable electronic products to ensure that the system has the ability to operate stably for a long time.
4. **LED drive circuit**:
SSM4507GM-VB is suitable for LED drive circuits, especially in lighting systems that require low power consumption and high efficiency. This MOSFET provides a low on-resistance, which can reduce the power loss of the system and improve the driving efficiency. It is widely used in smart home, commercial lighting and automotive lighting.
5. **Electric vehicles and energy storage systems**:
This MOSFET also has important applications in electric vehicles (EV) and energy storage systems. It can efficiently manage batteries and convert power, and is suitable for the management of electric vehicle drive systems, charging systems and battery energy storage units to ensure power conversion efficiency and battery life.
6. **Consumer Electronics Devices**:
In consumer electronics such as smartphones, tablets, and wearable devices, the SSM4507GM-VB can be used in power management modules such as battery-powered systems, load switches, and battery charging circuits. Its low power consumption and high efficiency make it an ideal switching element in these portable devices.
7. **Audio Amplifiers and Signal Processing**:
Due to its low on-resistance and high current handling capability, the SSM4507GM-VB is also suitable for audio power amplifiers and signal processing circuits, especially high-efficiency, high-fidelity audio systems. This MOSFET performs well in low-frequency and high-frequency switching applications and is widely used in power amplifiers, wireless audio, and home appliances.
8. **Power Management in Communication Equipment**:
This MOSFET can also be used for power management in communication equipment, especially in wireless communication base stations, modems, routers, and switches that require efficient power conversion and low current loss to ensure stable and efficient power supply.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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