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SSM4501GM-VB Product details

Product introduction:

1. **Product Introduction:**

SSM4501GM-VB is a high-efficiency dual-channel N+P-type MOSFET in SOP8 package, designed for power management, current control and switching applications. This model integrates an N-type MOSFET and a P-type MOSFET, suitable for bipolar power supply design, and can effectively provide bidirectional current control. At VGS = 10V, the low on-resistance (RDS(ON)) provided by SSM4501GM-VB is 18mΩ (N-Channel) and 40mΩ (P-Channel), which can significantly reduce power loss and improve circuit efficiency.

The maximum drain-source voltage of this MOSFET is ±30V, which is suitable for low-voltage applications, especially in high-frequency, high-efficiency power conversion, battery management and load drive circuits. Due to the use of Trench technology, SSM4501GM-VB has low on-resistance and good switching characteristics, and can provide excellent performance in high-frequency switching and fast response applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A 18/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
2. **Detailed parameter description:**

- **Model**: SSM4501GM-VB
- **Package type**: SOP8
- **Configuration**: Dual-channel N+P type MOSFET
- **Maximum drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N-Channel: 1.6V
- P-Channel: -1.7V
- **On-resistance (RDS(ON))**:
- N-Channel:
- 24mΩ (at VGS = 4.5V)
- 18mΩ (at VGS = 10V)
- P-Channel:
- 50mΩ (at VGS = 4.5V)
- 40mΩ (at VGS = 10V)
- **Maximum Drain Current (ID)**: ±8A
- **Technology**: Trench
- **Operating Temperature Range**: Typically -55°C to 150°C (depending on the specific usage environment)

Domain and module applications:

3. **Application fields and module examples:**

#### (1)**DC-DC converter**
SSM4501GM-VB is very suitable for DC-DC converters, especially in applications requiring bipolar current control. Its low on-resistance (18mΩ for N-type and 40mΩ for P-type) can effectively reduce energy loss and improve conversion efficiency. In DC-DC conversion, N-type MOSFET can be used for synchronous rectification, while P-type MOSFET can be used for load switching or current feedback. Due to its dual-channel design, SSM4501GM-VB provides a simplified circuit layout, reduces the number of components, and optimizes switching losses.

#### (2)**Battery Management System (BMS)**
SSM4501GM-VB is suitable for battery management systems (BMS), especially applications requiring bipolar current control such as electric vehicles, power tools, and energy storage systems. It can accurately control the battery charging and discharging process, protect the battery, and improve the efficiency of the battery system. The high current carrying capacity and low on-resistance of the MOSFET help reduce energy loss, thereby extending the battery life and improving the overall system efficiency.

#### (3)**Synchronous Rectification**
SSM4501GM-VB is very effective in synchronous rectification applications. Synchronous rectification technology can replace traditional diode rectifiers and use MOSFETs to reduce reverse recovery losses and conduction losses. Because the MOSFET provides bipolar current control, it can provide efficient current switching in bidirectional current applications, especially suitable for high-frequency power conversion modules. The fast switching characteristics and low RDS(ON) of the MOSFET make it excel in high-efficiency power supply designs.

#### (4)**Forward and Reverse Current Control**
In power supply circuits, the SSM4501GM-VB is suitable for forward and reverse current control scenarios due to its dual N+P type configuration. For example, in inverters, load switching circuits, and electric drive control circuits, it can provide bidirectional current control capabilities to ensure stable current conduction and reduce power losses. The low on-resistance and fast response of MOSFET in these applications can significantly improve the overall efficiency of the system.

#### (5)**Intelligent Power Management**
SSM4501GM-VB is suitable for various intelligent power management systems, especially in portable devices that require high efficiency and high performance. For example, mobile power supplies, smart home devices, LED driver modules, etc., all of which require precise and efficient power management solutions. Due to its low RDS(ON), fast switching performance and high current carrying capacity, this MOSFET provides ideal performance in these high-efficiency power management systems.

#### (6)**Automotive Electronics**
In the field of automotive electronics, SSM4501GM-VB can be used in electric vehicle chargers, battery protection modules, and other power management circuits. It can provide stable power control in automotive systems and is particularly suitable for high-power inverter and converter designs. The high current carrying capacity and low loss characteristics of MOSFET enable it to effectively reduce power waste in automotive electrical systems and improve overall system efficiency.

### Summary:
SSM4501GM-VB is a high-efficiency, low-power dual-channel N+P-type MOSFET suitable for a variety of power management and load control applications. Its low on-resistance, high current handling capability, and bipolar current control characteristics make it an ideal choice for DC-DC converters, battery management systems, synchronous rectification, power management, smart devices, and automotive electronics. Whether in high-frequency power conversion or in complex bidirectional current control systems, SSM4501GM-VB can provide excellent performance to meet the needs of modern power systems for high efficiency and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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