Product introduction:
**SSM4228GM-VB MOSFET Product Introduction**
SSM4228GM-VB is a high-performance dual-channel MOSFET, using SOP8 package, configured as a dual N-Channel MOSFET (N+N). This model has low on-resistance and excellent current carrying capacity, suitable for applications requiring high efficiency and low power consumption. The maximum drain-source voltage (VDS) of SSM4228GM-VB is 30V, the maximum gate-source voltage (VGS) is 20V, it has a low turn-on voltage (Vth=1.7V), and its on-resistance (RDS(ON)) is 20mΩ and 16mΩ at VGS=4.5V and 10V respectively, suitable for efficient power management and switching applications.
This MOSFET uses Trench technology to provide lower conduction loss and higher switching efficiency, suitable for a variety of low-voltage, high-frequency, low-power applications, such as power management, power conversion and load switching. With a maximum drain current (ID) of 8.5A, it is suitable for a variety of small to medium current load applications.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
|
16mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
**SSM4228GM-VB MOSFET detailed parameter description**
- **Package**: SOP8
- **Configuration**: Dual-N+N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 20mΩ (at VGS=4.5V)
- 16mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 8.5A
- **Maximum power loss (Pd)**: Calculated according to the current conditions of the working environment and application
- **Operating temperature range**: -55°C to 150°C
- **Technology**: Trench
- **Thermal resistance (RθJA)**: The specific value depends on the package and heat dissipation, suitable for medium and low power density applications
- **Junction temperature (Tj)**: Maximum 150°C
- **Gate charge (Qg)**: Low, suitable for high frequency switching applications
Domain and module applications:
**Application fields and modules**
1. **Power management system**:
Due to its low on-resistance and high current carrying capacity, the SSM4228GM-VB is very suitable for use in power management systems, especially those low-voltage DC-DC converters, buck or boost converters that require high efficiency. Its low on-resistance and low power consumption can significantly reduce energy loss and provide efficient power solutions in portable devices and consumer electronics.
2. **Load switch application**:
In the load switch module, the SSM4228GM-VB, as an N-Channel MOSFET, can control the start and stop of the load, and is particularly suitable for low-voltage switching circuits, such as the switch control of battery-powered devices. It can effectively perform load switching operations and ensure efficient power transmission. It is commonly used in smart homes, portable devices and battery management systems.
3. **Battery management system (BMS)**:
In the battery management system, the SSM4228GM-VB can be used for efficient switch control during battery charging and discharging. Its low on-resistance and high current carrying capacity enable it to maintain high efficiency during charging and discharging, and is widely used in power tools, electric vehicles, portable electronics, and battery energy storage systems.
4. **LED drive circuit**:
This MOSFET can be used in high-efficiency LED drive circuits, especially in lighting systems that require low power consumption and low losses. Its low on-resistance helps reduce switching losses and improve drive efficiency, and is commonly used in smart lighting systems, automotive lighting, and commercial lighting.
5. **Audio power amplifier and signal processing**:
The SSM4228GM-VB can be used as a switching element in an audio power amplifier for high-frequency audio applications. Its low gate charge and fast switching capability enable it to perform well in audio signal processing and power amplifier circuits, and is commonly used in high-fidelity audio systems, power amplifiers, and portable audio equipment.
6. **Communication equipment and modules**:
Due to its suitability for high-frequency switching applications, the SSM4228GM-VB can also be used in power management modules in communication equipment. Especially in wireless base stations, mobile communication devices, and RF front-end modules that require efficient power conversion, this MOSFET can effectively reduce power loss and improve work efficiency.
7. **Industrial Automation and Robotics**:
In industrial automation and robotics, the SSM4228GM-VB can be used as a switching element in motor drive and servo control circuits. Its low on-resistance and high current carrying capacity make it an ideal choice for automation systems, especially in small mechanical control, transmission and actuator control.
8. **Smart Home Devices**:
In smart home applications, the SSM4228GM-VB is suitable for low-power circuits and sensor switch control. Its efficient switching characteristics and small package make it an ideal choice for embedded applications, and it is widely used in smart sockets, sensor networks, smart security equipment and other fields.
9. **Power Tools and Consumer Electronics**:
This MOSFET is also widely used in power tools, electric toys, and consumer electronics. Its low on-resistance makes power tools more efficient when running at high current loads, and is suitable for use in equipment that requires high current and fast response.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features