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SSM3K37MFV-VB Product details
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**SSM3K37MFV-VB MOSFET Product Introduction**
SSM3K37MFV-VB is a small, low-power N-Channel MOSFET in a SOT723-3 package, designed for low-voltage and low-current switching applications. Its maximum drain-source voltage (VDS) is 20V, suitable for small power management and signal processing circuits. The on-resistance (RDS(ON)) of this MOSFET is 337.5mΩ (VGS=4.5V) and 270mΩ (VGS=10V), respectively, with low switching losses and good thermal stability, suitable for applications with high power efficiency requirements.
Its turn-on voltage (Vth) is 0.45V, indicating that the device can start to conduct at a lower gate voltage, which makes it suitable for low-power, low-voltage circuits. The maximum drain current (ID) of this MOSFET is 0.65A, suitable for applications requiring low current switching. Based on Trench technology, the SSM3K37MFV-VB provides lower on-resistance and higher efficiency, making it suitable for use in a variety of portable and consumer electronics products that require precise power control.
SSM3K37MFV-VB is a small, low-power N-Channel MOSFET in a SOT723-3 package, designed for low-voltage and low-current switching applications. Its maximum drain-source voltage (VDS) is 20V, suitable for small power management and signal processing circuits. The on-resistance (RDS(ON)) of this MOSFET is 337.5mΩ (VGS=4.5V) and 270mΩ (VGS=10V), respectively, with low switching losses and good thermal stability, suitable for applications with high power efficiency requirements.
Its turn-on voltage (Vth) is 0.45V, indicating that the device can start to conduct at a lower gate voltage, which makes it suitable for low-power, low-voltage circuits. The maximum drain current (ID) of this MOSFET is 0.65A, suitable for applications requiring low current switching. Based on Trench technology, the SSM3K37MFV-VB provides lower on-resistance and higher efficiency, making it suitable for use in a variety of portable and consumer electronics products that require precise power control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N |
**SSM3K37MFV-VB MOSFET detailed parameter description**
- **Package**: SOT723-3
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 0.45V
- **On-resistance (RDS(ON))**:
- 337.5mΩ (at VGS=4.5V)
- 270mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 0.65A
- **Maximum power loss (Pd)**: Typically, the power loss is low (the specific value needs to be calculated based on the temperature and current conditions of the working environment)
- **Technology**: Trench
- **Junction temperature (Tj)**: Maximum 150°C
- **Vibration resistance**: Meets industry standards, with good thermal stability and vibration resistance.
- **Package**: SOT723-3
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 0.45V
- **On-resistance (RDS(ON))**:
- 337.5mΩ (at VGS=4.5V)
- 270mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 0.65A
- **Maximum power loss (Pd)**: Typically, the power loss is low (the specific value needs to be calculated based on the temperature and current conditions of the working environment)
- **Technology**: Trench
- **Junction temperature (Tj)**: Maximum 150°C
- **Vibration resistance**: Meets industry standards, with good thermal stability and vibration resistance.
Domain and module applications：
**Application fields and modules**
1. **Low-power power management**:
SSM3K37MFV-VB is suitable for low-power power management systems. Its maximum drain-source voltage is 20V, which can meet the needs of various low-voltage power supply regulation, load switches and low-power DC-DC converters. It is suitable for 5V power supplies, portable devices and power control modules in wireless communication equipment.
2. **Portable consumer electronics**:
Due to its small package size (SOT723-3) and low power consumption, SSM3K37MFV-VB is an ideal switching element in portable electronic devices such as smart watches, Bluetooth headsets, wireless sensors and smart home devices. These devices have high requirements for power efficiency and space, and the low on-resistance and high switching efficiency of this MOSFET just meet these requirements.
3. **Signal switch and interface circuit**:
In some low-voltage signal switch applications, SSM3K37MFV-VB can be used to control the transmission of signals. Its low gate voltage startup characteristic (Vth=0.45V) makes it suitable for circuits such as logic level conversion, switch signal path, and low current signal conditioning, and is widely used in sensor interface and communication interface circuits.
4. **Load switch and battery management system**:
SSM3K37MFV-VB can be used as a load switch in battery management systems for battery charging, discharge control, power distribution, etc. Due to its small size and low on-resistance, it can achieve efficient control at lower voltages, making it an ideal choice for portable battery management systems.
5. **Low-power switching circuit**:
In low-power switching circuits, SSM3K37MFV-VB has very good performance and is particularly suitable for switching applications with low current loads. Its low on-resistance (RDS(ON)) can reduce switching losses and improve the overall efficiency of the system, making it suitable for applications such as wireless communication modules and low-power LED driver circuits.
6. **Wireless Sensor Networks**:
The SSM3K37MFV-VB can be widely used in wireless sensor networks as a load switch control element for sensor nodes. Its low power consumption and high efficiency make it an ideal choice for battery-powered wireless sensors, extending the life of the system and reducing the need for frequent battery replacement.
7. **Smart Home and Internet of Things (IoT) Devices**:
In smart home and IoT devices, the SSM3K37MFV-VB can be used for power switching and control of low-power devices. It can help achieve efficient power management and extend the battery life of the device, and is widely used in smart lamps, smart locks, temperature and humidity sensors, motion detectors and other devices.
8. **Low-power LED drive circuit**:
The MOSFET can also be used as a switching element in a low-power LED drive circuit for smart lighting and high-efficiency lamps. Due to its low on-resistance, it can maintain high efficiency under low power conditions, making it suitable for use in scenarios such as home lighting, vehicle lighting and decorative lighting.
1. **Low-power power management**:
SSM3K37MFV-VB is suitable for low-power power management systems. Its maximum drain-source voltage is 20V, which can meet the needs of various low-voltage power supply regulation, load switches and low-power DC-DC converters. It is suitable for 5V power supplies, portable devices and power control modules in wireless communication equipment.
2. **Portable consumer electronics**:
Due to its small package size (SOT723-3) and low power consumption, SSM3K37MFV-VB is an ideal switching element in portable electronic devices such as smart watches, Bluetooth headsets, wireless sensors and smart home devices. These devices have high requirements for power efficiency and space, and the low on-resistance and high switching efficiency of this MOSFET just meet these requirements.
3. **Signal switch and interface circuit**:
In some low-voltage signal switch applications, SSM3K37MFV-VB can be used to control the transmission of signals. Its low gate voltage startup characteristic (Vth=0.45V) makes it suitable for circuits such as logic level conversion, switch signal path, and low current signal conditioning, and is widely used in sensor interface and communication interface circuits.
4. **Load switch and battery management system**:
SSM3K37MFV-VB can be used as a load switch in battery management systems for battery charging, discharge control, power distribution, etc. Due to its small size and low on-resistance, it can achieve efficient control at lower voltages, making it an ideal choice for portable battery management systems.
5. **Low-power switching circuit**:
In low-power switching circuits, SSM3K37MFV-VB has very good performance and is particularly suitable for switching applications with low current loads. Its low on-resistance (RDS(ON)) can reduce switching losses and improve the overall efficiency of the system, making it suitable for applications such as wireless communication modules and low-power LED driver circuits.
6. **Wireless Sensor Networks**:
The SSM3K37MFV-VB can be widely used in wireless sensor networks as a load switch control element for sensor nodes. Its low power consumption and high efficiency make it an ideal choice for battery-powered wireless sensors, extending the life of the system and reducing the need for frequent battery replacement.
7. **Smart Home and Internet of Things (IoT) Devices**:
In smart home and IoT devices, the SSM3K37MFV-VB can be used for power switching and control of low-power devices. It can help achieve efficient power management and extend the battery life of the device, and is widely used in smart lamps, smart locks, temperature and humidity sensors, motion detectors and other devices.
8. **Low-power LED drive circuit**:
The MOSFET can also be used as a switching element in a low-power LED drive circuit for smart lighting and high-efficiency lamps. Due to its low on-resistance, it can maintain high efficiency under low power conditions, making it suitable for use in scenarios such as home lighting, vehicle lighting and decorative lighting.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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